Materials Science Forum, Vol.389-3, 131-134, 2002
Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
Aluminum doping of SiC single crystals with powder source results in a exponential axial decrease in charge carrier concentration caused by aluminum source depletion and defect generation through high initial aluminum concentrations. Therefore we applied an additional gas flow to the PVT-Growth-Setup leading direct into the growth cell. Thus a continuous supply of aluminum atoms out of an external reservoir was possible. With the Modified-PVT-Method high quality crystals with improved axial (4H: 2(.)10(16)cm(-3)