화학공학소재연구정보센터
Applied Chemistry, Vol.6, No.1, 147-150, May, 2002
Modified HVPE법을 이용한 GaN 박막의 2단계 성장에 관한 연구
Studies on the 2-step growth of GaN thin films by using modified HVPE technique
Epitaxial GaN layers were deposited on sapphire substrates by modified HVPE with 2-step growth. Variations in the surface morphology and the layer properties are compared between two-step growth and direct growth to study the effects of various growth conditions. An optically flat and smooth surface was obtained over a 10×10cm(2) sapphire substrates using 2-step growth. The narrowest x-ray rocking curve from the (0002) plane is 530 acrsec which shows the epitaxial GaN layer with 2-step growth has good crystalline quality.