화학공학소재연구정보센터
Journal of Crystal Growth, Vol.390, 51-55, 2014
Influence of the barrier composition in GaN/In chi Al1-chi N quantum wells properties
GaN/In chi Al1-xN quantum wells with varying In composition in the In,All N barrier and varying GaN well thickness were grown by metal-organic vapor phase epitaxy on a c-plane sapphire. The as-grown samples were characterized by high resolution X-ray diffraction to determinate the composition and the relaxation state. The surface was observed by atomic force microscopy and the photoluminescence was measured at low temperature. A competition between the confinement effect and electric held effect has been evidenced. Under a critical well thickness, the luminescence is blue-shifted with the decrease of the In composition while above this critical thickness, the opposite behavior is observed. (C) 2013 Elsevier By. All rights reserved.