화학공학소재연구정보센터
Journal of Crystal Growth, Vol.387, 86-90, 2014
High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphire
Growth of high quality a-plane (11-20) GaN using a double lens structure (DES) on r-plane sapphire is reported. The DLS consisted of a hemispherically patterned SiO2 mask formed on an a-GaN template grown on a hemispherically patterned r-plane sapphire substrate. Our study suggests that the DES was very effective in improving the crystal quality and optical properties in a-plane GaN growth on r-plane sapphire substrate owing to decreased defects and enhanced light extraction. (C) 2013 Published by Elsevier B.V.