화학공학소재연구정보센터
Journal of Crystal Growth, Vol.362, 276-281, 2013
Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy
With an aim to achieve compressively strained Si in which low hole effective mass is expected, investigations on growth of compressively strained Si/Si1-xCx/Si(100) heterostructure were carried out using gas-source molecular beam epitaxy (MBE). It was found that crystalline morphology and lattice strain strongly depends on substrate temperature. The compressively-strained Si with smooth surface was successfully realized at 550 degrees C. It was found that dislocation is preferentially introduced and pre-cipitations of carbon-related phases are less-pronounced at this substrate temperature. The obtained strain in the top Si layer was in the range of -0.6% to -0.7%, which is expected to be adequate for realization of low hole effective mass. (C) 2012 Elsevier B.V. All rights reserved.