화학공학소재연구정보센터
Journal of the Korean Industrial and Engineering Chemistry, Vol.10, No.2, 231-236, April, 1999
결정상과 분산도의 조절이 가능한 MoO3/SiO2 촉매의 제조 및 탈황반응특성 연구
Preparation and Catalytic Activity of Morphologically Controlled MoO3/SiO2 for Hydrodesulfurization
초록
결정상과 분산도가 조절된 MoO3/SiO2 담지촉매를 제조하여 촉매의 표면특성과 디벤조티오펜 탈황반응의 활성도를 고찰하였다. Mo의 표면담지량은 4 atoms Mo/nm2이었으며, 실리카 표면 위에 형성된 MoO3의 결정상은 sintered hexagonal, sintered orthorhombic, 및 dispersed hexagonal상이었다. XRD, Raman, 및 O2 흡착 결과 MoO3의 표면분산도는 sintered hexagonal3 결정은 650℃에서 MoO2로, 1000℃에서 Mo로 환원됨을 알 수 있었다. 디벤조티오펜 탈황반응을 30기압, 350∼500℃ 온도범위에서 수행하였으며, 실험 결과 활성도는 MoO3 결정체의 SiO2 표면에서의 분산도에 비례하여 증가함을 알 수 있었다.
Several series of morphologically controlled MoO3/SiO2 catalysts were prepared, characterized, and tested for hydrodesulfurization (HDS) of dibenzothiophene (DBT) activity. Molybdenum surface loaded with 4.0 atoms Mo/nm2 was prepared as sintered hexagonal and sintered orthorhombic, as well as a novel "well dispersed hexagonal" phase. Characterization by XRD, Raman, and O2 chemisorption results reveals that the dispersion of MoO3 over sillica depends on the final MoO3 phase in the order of; sintered hexagonal3 reduce to MoO2 at 650℃ and to Mo metal at 1000℃. HDS of DBT was performed in a differential reactor at 30 atm over the temperature range 350∼500℃. Activity of MoO3/SiO2 toward HDS of DBT is proportional to dispersion.
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