화학공학소재연구정보센터
Applied Surface Science, Vol.305, 474-476, 2014
Fabrication and electrical characterization of Li-N dual doped ZnO thin film transistor
The fabrication and electrical characterization of Li-N dual doped ZnO (ZnO:(Li,N)) thin film transistor (TFT) were studied in this work. The ZnO:(Li,N) film was deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering (RFMS) at room temperature. X-ray diffraction patterns revealed that the film was polycrystalline structure with preferential orientation in c-axis direction. The transmittance of the film was over 90% in the visible region after annealing. The electrical characterization showed a field effect mobility of 30.8 cm(2)/V s and an on/off current ratio of 2.16 x 10(7) for ZnO:(Li,N) TFT with a long-channel L = 120 pm. (C) 2014 Elsevier B.V. All rights reserved.