화학공학소재연구정보센터
Applied Surface Science, Vol.283, 521-524, 2013
Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes
The electrochemical potentiostatic activation (EPA) method is proven to effectively improve the internal quantum efficiency (IQE) of 385-nm ultraviolet light-emitting diodes (UV-LEDs). UV-LEDs wafers were immersed into 1.0 M HCl solution, and an electric voltage of 3.0V was applied to the p-type GaN layer in order to increase the hole concentration by breaking the Mg-H complex. Secondary ion mass spectroscopy analysis clearly indicates the successful removal of hydrogen atoms by the EPA process, which is a similar to 35% reduction of the hydrogen concentration compared to the conventional N-2 annealing. The light-output power was enhanced by similar to 20% at an input current of 50 mA, which originated from an improvement of the IQE by similar to 20%. The reverse leakage current was also lowered by about one order after the EPA process. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.