화학공학소재연구정보센터
Applied Surface Science, Vol.270, 428-431, 2013
Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films
In this work, silicon-rich SiO2 (SRSO) thin films were deposited at different substrate temperatures (T-s) and then annealed by rapid thermal annealing to form SiO2-matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T-s on the micro-structure and electrical properties of the SiO2-matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films both increased significantly when the T-s was increased from room temperature to 373 K. When the T-s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 x 10(-3) S/cm to 5.5 x 10(-5) S/cm. The changes in micro-structure and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O-4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T-s, which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO2-matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T-s. (c) 2013 Elsevier B.V. All rights reserved.