화학공학소재연구정보센터
Applied Surface Science, Vol.261, 610-615, 2012
Effect of the nanoscratch resistance of indium nitride thin films in the etching duration
This study present the nanotribological behavior of single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si(111) substrates. The surface morphology and friction (mu) were analyzed using atomic force microscopy and nanoscratch system. It is confirmed that the normal force (F-n) measured values of mu of the InN films, from 10 to 60 min of etching duration, were in the range from 0.2 to 0.43 for F-n = 2000 mu N; 0.25 to 0.58 for F-n = 6000 mu N, respectively. It is suggested that the measured values of mu is slightly increased based on the etching duration due to the etching effect on the grain boundary and reduce film quality of InN films. From morphological observations, we compared the sliding resistance against contact-induced damage of the InN films in the presented ploughed of the area. It is confirmed that the contact sliding line is observable due to the increased F-n, the following investigation with friction curve and lateral force is studied. (C) 2012 Elsevier B. V. All rights reserved.