화학공학소재연구정보센터
Thin Solid Films, Vol.520, No.7, 2455-2460, 2012
In2O3 films prepared by thermal oxidation of amorphous InSe thin films
In2O3 thin films were prepared by the thermal oxidation of amorphous In Se films in air atmosphere. The structure, morphology and composition of the thermal annealed products were characterized by X-ray diffraction (XRD), scanning electron microscopy and energy-dispersive spectroscopy, respectively. The XRD patterns indicate that the as-deposited In Se films were amorphous and they fully transformed into polycrystalline In2O3 films with a cubic crystal structure in the preferential (222) orientation at a temperature around 600 degrees C. The optical energy gap of 3.66 eV was determined at room temperature by transmittance and reflectance measurements using UV-vis-NIR spectroscopy. A preliminary characterization shows that these films have a promising response towards NO2 gas at a working temperature around 180 degrees C. (C) 2011 Elsevier B.V. All rights reserved.