화학공학소재연구정보센터
Thin Solid Films, Vol.519, No.20, 6755-6758, 2011
Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O-2/N-2/Ar and H-2/N-2/Ar inductively coupled plasmas
In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N-2 gas flow ratio, Q (N-2), and dc self-bias voltage (V-dc) in O-2/N-2/Ar and H-2/N-2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O-2/N-2/Ar than in the H-2/N-2/Ar plasmas, and the profile angle was larger in the O-2/N-2/Ar than in the H-2/N-2/Ar plasmas under the same processes conditions. The use of O-2/N-2/Ar plasma was more advantageous than the H-2/N-2/Ar plasma for controlling LER and profile angle. (C) 2011 Elsevier B.V. All rights reserved.