화학공학소재연구정보센터
Thin Solid Films, Vol.519, No.18, 5996-5999, 2011
X-ray microdiffraction from alpha-Ti0.04Fe1.96O3 (0001) epitaxial film grown over alpha-Cr2O3 buffer layer boundary
Ti-doped hematite (alpha-Ti0.04Fe1.96O3) film grown over patterned alpha-Cr2O3 a buffer layer on alpha-Al2O3(0001) substrate was characterized with synchrotron X-ray microdiffraction. The film was grown by oxygen plasma assisted molecular beam epitaxy method. The film growth mode was correlated to buffer layer boundary and Ti concentration variation. Epitaxial alpha-Ti0.04Fe1.96O3 film was formed on bare substrate adjacent to the buffer layer. The epitaxial film was connected laterally to a strain-relaxed epitaxial alpha-Ti0.04Fe1.96O3 film grown on the buffer layer. On bare alpha-Al2O3 substrate with diminished Ti concentration only a small portion of alpha-TixFe1-xO3 film was epitaxial either as coherent to the substrate or strain-relaxed form. (C) 2011 Elsevier B.V. All rights reserved.