화학공학소재연구정보센터
Thin Solid Films, Vol.519, No.15, 5178-5182, 2011
Improved properties of Ti-doped ZnO thin films by hydrogen plasma treatment
This work investigates the effects of substrate temperature (T(S)) and hydrogen plasma post-treatment on the properties of TZO thin films prepared by radio frequency magnetron sputter. All films had a (002) preferential orientation along the c axis at 2 theta similar to 34 degrees. As T(S) increased from room temperature to 300 degrees C, the structural, electrical, and optical characteristics of the TZO films were enhanced. The hydrogen plasma was performed by a plasma-enhanced chemical vapor deposition system at 300 degrees C. The film resistivity decreased markedly by 60% to 1.20 x 10(-3) Omega cm after a 90-min treatment in comparison with that of the as-deposited film. The improved characteristics of the plasma-treated TZO films are attributed to the formation of shallow donors and the desorption of oxygen species at grain boundaries during hydrogen plasma treatment. (C) 2011 Elsevier B.V. All rights reserved.