화학공학소재연구정보센터

Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.4 Entire volume, number list
ISSN: 1099-0062 (Print) 

In this Issue (24 articles)

A71 - A74 Development of novel method for preparation of PEMFC electrodes
Kim H, Popov BN
A75 - A77 Nanostructured lead dioxide thin electrode
Morales J, Petkova G, Cruz M, Caballero A
A78 - A81 Effect of cell width on segmented-in-series SOFCs
Lai TS, Liu J, Barnett SA
A82 - A84 Extent of PEMFC cathode surface oxidation by oxygen and water measured by CV
Paik CH, Jarvi TD, O'Grady WE
A85 - A87 Versatile synthesis of carbon-rich LiFePO4 enhancing its electrochemical properties
Bauer EM, Bellitto C, Pasquali M, Prosini PP, Righini G
A88 - A92 POSS based electrolytes for rechargeable lithium batteries
Maitra P, Wunder SL
C39 - C42 Influence of elastic deformation on initiation of pits on duplex stainless steels
Vignal V, Mary N, Valot C, Oltra R, Coudreuse L
C43 - C45 Improvement in the crystalline quality of epitaxial GaN films grown by MOCVD by adopting porous 4H-SiC substrate
Jeong JK, Kim HJ, Seo HC, Kim HJ, Yoon E, Hwang CS, Kim HJ
C46 - C48 Plasma-enhanced atomic layer deposition of ruthenium thin films
Kwon OK, Kwon SH, Park HS, Kang SW
C49 - C51 Low-temperature deposition of nanocrystalline ZnO phosphor films from neutral ethanolic zinc acetate solutions in the absence of base
Hosono E, Fujihara S, Kimura T
C52 - C54 Electroacoustic measurements on electrodeposited films obtained from copper damascene process chemistries
Gabrielli C, Mocoteguy P, Perrot H, Zdunek A, Bouard P, Haddix M
C55 - C56 Atomic layer deposition of hafnium silicate thin films using HfCl2[N-SiMe3)(2)](2) and H2O
Nam WH, Rhee SW
F25 - F29 Optimized nitridation of Al2O3 interlayers for atomic-layer-deposited HfO2 gate dielectric films
Park HB, Cho M, Park J, Lee SW, Hwang CS, Jeongb J
G51 - G52 Back side damage gettering of Cu using a cavitating jet
Kumano H, Soyama H
G53 - G55 MOSFETs with recessed SiGe source/drain junctions formed by selective etching and growth
Isheden C, Hellstrom PE, Radamson HH, Zhang SL, Ostling M
G56 - G58 Correlation between bond cleavage in parylene N and the degradation of its dielectric properties
Senkevich JJ, Mallikarjunan A, Wiegand CJ, Lu TM, Bani-Salameh HN, Lichti RL
G59 - G61 A self-aligned gate-all-around MOS transistor on single-grain silicon
Zhang SD, Han RQ, Wang HM, Chan MS
G62 - G64 Low-temperature growth of thermal quality SiO2 thin films in high-density He/O-2 plasma generated by RF driven ICP source
Joshi PC, Ono Y, Voutsas AT, Hartzell JW
G65 - G67 Low resistance Ni-Mg solid solution/Pt ohmic contacts to p-type GaN
Leem DS, Song JO, Kim SH, Seong TY
G68 - G71 Effect of stress on the properties of copper lines in Cu interconnects
Balakumar S, Kumar R, Shimura Y, Namiki K, Fujimoto M, Toida H, Uchida M, Hara T
G72 - G74 Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures
Desmaris V, Eriksson J, Rorsman N, Zirath H
G75 - G78 Texturing of as-cut silicon conducted under negative potentials
Starosvetsky D, Gordon N, Ein-Eli Y
G79 - G82 Electrical equivalent sidewall damage in patterned low-k dielectrics
Iacopi F, Stucchi M, Richard O, Maex K
G83 - G85 Abnormal oxidation of NiSi formed on arsenic-doped substrate
Yun JG, Ji HH, Oh SY, Bae MS, Lee HJ, Huang BF, Kim YG, Wang JS, Sung NG, Hu SB, Lee JG, Park SH, Lee HS, Ho WJ, Kim DB, Lee HD