화학공학소재연구정보센터

Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.10, No.9 Entire volume, number list
ISSN: 1099-0062 (Print) 

In this Issue (35 articles)

D89 - D91 Selective enhancement of SiO2 etch rate by ar-ion implantation for improved etch depth control
Sun X, Lu Q, Takeuchi H, Balasubramanian S, Liu TJK
D92 - D94 Interconnection of micropad electrodes by controlled "extraneous" deposition of electroless NiB film
Yokoshima T, Yamaji Y, Oosato H, Tamura Y, Kikuchi K, Nakagawa H, Aoyagi M
G63 - G67 Electrochemical impedance spectroscopy of dense silica and porous silicon oxycarbide
Cherif KSA, Kordic S, Farkas J, Szunerits S
K39 - K41 High-efficiency blue organic light-emitting diodes using C-60 as a surface modifier on indium tin oxide
Kim SH, Jang J, Yoon JH, Lee JY
P23 - P25 Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper
Liao CN, Lee CH, Chen WJ
A199 - A203 Stabilizing cyclability of an aqueous lithium-ion battery LiNi1/3Co1/3O2/LixV2O5 by polyaniline coating on the anode
Wang HB, Huang KL, Zeng YQ, Zhao FG, Chen LQ
A204 - A207 Characterization of nanosize molybdenum trisulfide for lithium batteries and MoS3 structure confirmation via electrochemistry
Wang J, Ng SH, Chew SY, Wexler D, Wang GX, Liu HK
A208 - A211 A nonflammable lithium polymer battery with high performance for elevated temperature applications
Bakenov Z, Nakayama M, Wakihara M
A212 - A215 Opening mechanism of closed graphitized tips via low-temperature surface fluorination
Groult H, Nakajima T, Tressaud A, Shibata S, Durand E, Perrigaud L, Warmont F
A216 - A219 Effects of triacetoxyvinylsilane as SEI layer additive on electrochemical performance of lithium metal secondary battery
Lee YM, Seo JE, Lee YG, Lee SH, Cho KY, Park JK
A220 - A224 Substituted MxCu6-xSn5 compounds (M = Fe, Co, Ni, Zn) designing multicomponent intermetallic electrodes for lithium batteries
Vaughey JT, Owejan J, Thackeray MM
A225 - A227 Implication of liquid-phase deposited amorphous RuO2 electrode for electrochemical supercapacitor
Lee W, Mane RS, Todkar VV, Lee S, Egorova O, Chae WS, Han SH
A228 - A231 Suppression of Mn dissolution in spinel cathodes by trapping the protons within layered oxide cathodes
Manthiram A, Choi W
B135 - B138 Ceria nanocoating for sulfur tolerant Ni-based anodes of solid oxide fuel cells
Kurokawa H, Sholklapper TZ, Jacobson CP, De Jonghe LC, Visco SJ
B139 - B141 Nanoporous Ni-Fe bimetallic plates for nonfragile, reliable SOFCs
Yan JW, Enoki M, Matsumoto H, Ishihara T
B142 - B146 Single PEMFC design and validation for high-temperature MEA testing and diagnosis up to 300 degrees C
Tang YH, Zhang JL, Song CJ, Zhang JJ
B147 - B149 Carbon nanotube-supported platinum electrode for ORR in phosphoric acid solution - Effect of PTFE content and annealing temperature
Paschos O, Knupp SL, Choi P, Snyder J, Buelte SJ, Merchant N, Qi ZG, Haldar P
B150 - B154 The impact of Ru contamination of a Pt/C electrocatalyst on its oxygen-reducing activity
Gancs L, Hult BN, Hakim N, Mukerjee S
B155 - B160 Dynamic flow field for fuel cells
Wilkinson DP, Blanco M, Zhao H, Wu J, Wang H
H243 - H247 Composite polymer core-silica shell abrasives effect of polishing time and slurry solid content on oxide CMP
Armini S, Whelan CM, Moinpour M, Maex K
H248 - H250 Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition
Wang LC, Tao M
H251 - H253 Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process
Bien DCS, Bain MF, Low YH, Mitchell NSJ, Armstrong MB, Gamble HS
H254 - H256 Formation of Sb-doped SnO2 p-type ohmic contact for near-UV GaN-based LEDs by a CIO interlayer
Hong HG, Song JO, Na H, Kim H, Kim KK, Seong TY
H257 - H259 ALD refill of nanometer-scale gaps with high-kappa dielectric for advanced CMOS technologies
Lee D, Seidel T, Dalton J, Liu TJK
H260 - H263 Catalytic effect of Pt on Ni(Pt)-Si-O solid-state reaction
Wei R, Dongzhi C
H264 - H266 Influence of F+ co-implants on EOR defect formation in B+-implanted, ultrashallow junctions
Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB
H267 - H269 Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity
Lim W, Wang YL, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ
H270 - H272 In/ITO p-type electrode for high-brightness GaN-based light emitting diodes
Song JO, Kim KK, Kim H, Hong HG, Na H, Seong TY
H273 - H277 A simple method for measurement of photoacid generator photoreaction kinetics in formulated, chemically amplified photoresist films
Lee CT, Yueh W, Roberts J, Henderson CL
H278 - H280 Improvement in positive-bias-temperature-instabilities reliability and device performance of TaSiN/ HfSiON gate stacks with high temperature post-nitridation annealing
Kamiyama S, Miura T, Nara Y
H281 - H283 Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe
Zhou P, Shin YC, Choi BJ, Choi S, Hwang CS, Lin YY, Lv HB, Yan XJ, Tang TA, Chen LY, Chen BM
H284 - H286 Characterization of photoconductive amorphous Si : H films for photoconducting sensor applications
Phuong NM, Seong NJ, Ahn JK, Kim ET, Lee JH, Kim GH, Yoon SG
J101 - J104 A method to fabricate field emitters using electroless codeposited composite of MWNTs and nickel
Liu YM, Sung Y, Chen YC, Lin CT, Chou YH, Ger MD
J105 - J107 A comparative study of SiCN/si and SiCN/SiCN junctions for high-temperature ultraviolet detecting applications
Chou TH, Fang YK, Yang CY, Chiang YT, Shie JS, Chien CC
J108 - J112 Fabrication and characterization of a microsensor for detecting simultaneously both earth's magnetic field and acceleration
Cho JM, Kim KS, An S, Lee SY, Kim SW