화학공학소재연구정보센터

Applied Surface Science

Applied Surface Science, Vol.216, No.1-4 Entire volume, number list
ISSN: 0169-4332 (Print) 

In this Issue (108 articles)

1 - 1 ISCSI-4 - Proceedings of the Fourth International Symposium on the Control of Semiconductor Interfaces - Karuizawa, Japan, October 21-25, 2002
Hiraki A
2 - 7 The national Si-Soft Project
Chang CY, Trappey CV
8 - 14 Coexistence of passive and active oxidation for O-2/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy
Teraoka Y, Moritani K, Yoshigoe A
15 - 18 Adsorption of Si atom on H-terminated Si(001)-2 x 1 surface
Hashizume T, Kajiyama H, Suwa Y, Heike S, Matsuura S, Nara J, Ohno T
19 - 23 Temperature dependence of flat Ge/Si(001) heterostructures as observed by CAICISS
Tsushima R, Katayama M, Fujino T, Shindo M, Okuno T, Oura K
24 - 29 Anomalously large band-bending for HF-treated p-Si surfaces
Watanabe D, En A, Nakamura S, Suhara M, Okumura T
30 - 34 Stochastic motion of 7 x 7 kinks at monoatomic step edges on the Si(111) surface
Fukuda T, Maeda S, Nakayama H
35 - 40 Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
Gruznev D, Furukawa Y, Mori M, Tambo T, Lifshits VG, Tatsuyama C
41 - 45 Surface stress relaxation in SiO2 films by plasma nitridation and nitrogen distribution in the film
Itakura AN, Shimoda M, Kitajima M
46 - 53 Novel post CMP cleaning using buffered HF solution and ozone water
Yeh CF, Hsiao CW, Lee WS
54 - 58 Investigation of SiC clean surface and Ni/SiC interface using scanning tunneling microscopy
Hattori N, Hirai M, Kusaka M, Iwami M
59 - 64 Hydrogen-related structural changes on CVD diamond (100) surfaces by ultra-high-vacuum annealing
Nakamura J, Fukumoto S, Teraji T, Murakami H, Ito T
65 - 71 Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam
Hamada M, Teraji T, Ito T
72 - 77 Effect of Ni-Cu substrates on phase hexagonal and cubic boron nitride selection of thin films
Kotake S, Hasegawa T, Kamiya K, Suzuki Y, Masui T, Kangawa Y, Nakamura K, Ito T
78 - 82 Anisotropy of lateral growth rate in liquid phase epitaxy of {001} InP
Kochiya T, Oyama Y, Suto K, Nishizawa JI
83 - 87 Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
Emoto T, Yoshida Y, Akimoto K, Ichimiya A, Kikuchi S, Itagaki K, Namita H
88 - 93 Laser-stimulated control of interfaces at grain boundaries in polycrystalline CdxHg1-xTe films
Gnatyuk VA, Aoki T, Hatanaka Y
94 - 97 Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment
Ishizuka S, Kato S, Okamoto Y, Sakurai T, Akimoto K, Fujiwara N, Kobayashi H
98 - 105 Modification of GaAs and copper surface by the formation of SiO2 aerogel film as an interlayer dielectric
Park SW, Jung SB, Kang MG, Park HH, Kim HC
106 - 112 Interface formation and properties of alpha-NPD thermally deposited on CVD diamond films
Chun MS, Teraji T, Ito T
113 - 118 Contactless electrical characterization of surface and interface of SOI materials
Nakamura S, Watanabe D, En A, Suhara M, Okumura T
119 - 123 Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing
Bae C, Rayner GB, Lucovsky G
124 - 132 Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3
Hinkle C, Lucovsky G
133 - 140 Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(001) surface
Takakuwa Y, Ishida F, Kawawa T
141 - 148 Theoretical study on the initial processes of nitridation of silicon thin film
Yoshida S, Doi K, Nakamura K, Tachibana A
149 - 155 Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CNx) film in magnetron sputtering
Jung HS, Park HH
156 - 162 The role of vacuum ultraviolet in H-2 plasma treatment on SiO2 aerogel film
Jung SB, Park HH, Kim H
163 - 168 The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems
Adams D, Julies BA, Mayer JW, Alford TL
169 - 173 Surface and interface study of Cu (film)/SiC (substrate) system
An Z, Hirai M, Kusaka M, Iwami M
174 - 180 Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100)
Nakatsuka O, Onoda H, Okada E, Ikeda H, Sakai A, Zaima S, Yasuda Y
181 - 186 Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems
Takeyama MB, Itoi T, Aoyagi E, Noya A
187 - 191 Nano-structure of transition-metal (Ti, Ni)/SiC system: photo-emission electron microscopy and soft X-ray fluorescence spectroscopy
Hirai M, Labis JP, Ohi A, Kamezawa C, Morikawa Y, Yoshida K, Kusaka M, Iwami M
192 - 197 Properties of GaN and AlGaN Schottky contacts revealed from I-V-T and C-V-T measurements
Sawada T, Izumi Y, Kimura N, Suzuki K, Imai K, Kim SW, Suzuki T
198 - 202 Process-induced defects and potential distribution in nearly ideal Au/Si Schottky barriers
Maeda K
203 - 207 Interface-controlled Gd2O3/GaAs system for ferroelectric memory application
Yang JK, Kim WS, Park HH
208 - 214 Built-in interface in high-kappa gate stacks
Hiratani M, Torii K, Shimamoto Y, Saito SI
215 - 222 Band offset energies in zirconium silicate Si alloys
Lucovsky G, Rayner B, Zhang Y, Appel G, Whitten J
223 - 227 Diffusion and incorporation of Zr into thermally grown SiO2 on Si(100)
Yamaoka M, Murakami H, Miyazaki S
228 - 233 Comparison of thermal and plasma oxidations for HfO2/Si interface
Hayashi S, Yamamoto K, Harada Y, Mitsuhashi R, Eriguchi K, Kubota M, Niwa M
234 - 238 Chemical and electronic structures of Lu2O3/Si interfacial transition layer
Nohira H, Shiraishi T, Nakamura T, Takahashi K, Takeda M, Ohmi S, Iwai H, Hattori T
239 - 245 Oxygen radical treatment applied to ferroelectric thin films
Takahashi I, Sakurai H, Yamada A, Funaiwa K, Hirai K, Urabe S, Goto T, Hirayama M, Teramoto A, Sugawa S, Ohmi T
246 - 251 Reliability of silicon nitride gate dielectrics grown at 400 degrees C formed by microwave-excited high-density plasma
Ohshima I, Cheng WT, Ono Y, Higuchi M, Hirayama M, Teramoto A, Sugawa S, Ohmi T
252 - 257 Electronic structure and energy band offsets for ultrathin silicon nitride on Si(100)
Miyazaki S, Narasaki M, Suyama A, Yamaoka M, Murakami H
258 - 263 The role of hydrogen migration in negative-bias temperature instability
Ushio J, Watanabe K, Kushida-Abdelghafar K, Maruizumi T
264 - 269 New intrinsic pair defects in silicon dioxide interface
Kitagawa I, Maruizumi T
270 - 274 Microscopic mechanism of interfacial reaction during Si oxidation
Akiyama T, Kageshima H
275 - 282 Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (001) surface
Anantathanasarn S, Hasegawa H
283 - 286 Compositional transition layer in SiO2/Si interface observed by high-resolution RBS
Kimura K, Nakajima K
287 - 290 Depth profiling of oxynitride film formed on Si(100) by photon energy dependent photoelectron spectroscopy
Nishizaki K, Nohira H, Takahashi K, Kamakura N, Takata Y, Shin S, Kobayashi K, Tamura N, Hikazutani K, Hattori T
291 - 295 Interfacial chemistry and structures of ultrathin Si oxynitride films
Oshima M, Kimura K, Ono K, Horiba K, Nakamura K, Kumigashira H, Oh JH, Niwa M, Usuda K, Hirashita N
296 - 301 Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties
Takahashi K, Nakayama M, Yokoyama S, Kimura T, Tokumitsu E, Funakubo H
302 - 306 Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
Ohshima C, Taguchi J, Kashiwagi I, Yamamoto H, Ohmi S, Iwai H
307 - 311 Si/SiO2 interface attack during metal oxide growth under low oxygen pressure
Kubo K, Kiyohara A, Shimoyama K, Yamabe K
312 - 317 An orientation ratio and ferroelectric properties of ultra-thin PTO films
Nishida K, Sugino T, Osada M, Kakihana M, Katoda T
318 - 322 Effects of the substrate on properties of PTO thin film
Nishida K, Matuoka G, Osada M, Kakihana A, Katoda T
323 - 328 Growth mechanism of PTO on MgO at initial stage
Nishida K, Shirakata K, Osada M, Kakihana M, Katoda T
329 - 333 Thickness dependent integrity of gate oxide on SOI
Tsujiuchi M, Iwamatsu T, Naruoka H, Umeda H, Ipposhi T, Maegawa S, Inoue Y
334 - 339 All-optical circular polarization switching phenomenon observed in photo chemically etched silicon
Yamamoto N
340 - 346 Simulation of dislocation accumulation in ULSI cells with STI structure
Ohashi T, Sato M, Maruizumi T, Kitagawa I
347 - 350 Improvement of hot-carrier-reliability by deuterium termination of Si/SiO2 interface defects
Takahashi H, Yamada-Kaneta H
351 - 355 Characterization of dielectric properties of ultrathin SiO2 film formed on Si substrate
Hirose K, Kitahara H, Hattori T
356 - 360 Structural study of SiC(0001)3 x 3 surface by surface X-ray diffraction
Aoyama T, Akimoto K, Ichimiya A, Hisada Y, Mukainakano S, Emoto T, Tajiri H, Takahashi T, Sugiyama H, Zhang X, Kawata H
361 - 364 In situ observation of step-terrace structures on MOVPE grown InP(001) by using grazing X-ray scattering
Kawamura T, Bhunia S, Watanabe Y, Fujikawa S, Matsui J, Kagoshima Y, Tsusaka Y
365 - 370 SiO2/SiC interface proved by positron annihilation
Maekawa A, Kawasuso A, Yoshikawa A, Itoh H
371 - 375 Study of Cu and Co gettering mechanism using radioactive isotope tracers
Matsukawa K, Naruoka H, Hattori N, Mashiko Y
376 - 381 Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR
Sato K, Izumi T, Iwase M, Show Y, Morisaki H, Yaguchi T, Kamino T
382 - 387 Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs
Bhunia S, Kawamura T, Watanabe Y, Fujikawa S, Matsui J, Kagoshima Y, Tsusaka Y, Uchida K, Sugiyama N, Furiya M, Nozaki S, Morisaki H
388 - 394 Real time observation of initial thermal oxidation using O-2 gas on Si(001) surface by means of synchrotron radiation Si-2p photoemission spectroscopy
Yoshigoe A, Moritani K, Teraoka Y
395 - 401 Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES
Takakuwa Y, Ishidzuka S, Yoshigoe A, Teraoka Y, Yamauchi Y, Mizuno Y, Tonda H, Homma T
402 - 406 Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE
Takahashi H, Miyoshi Y, Nakajima E, Mohan P, Motohisa J, Fukui T
407 - 412 Shape transition of InAs from two-dimensional islands to three-dimensional dots by annealing
Iwasaki S, Yamaguchi K
413 - 418 Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Asaoka N, Funato H, Suhara M, Okumura T
419 - 423 Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering
Wakayama Y, Sokolov LV, Zakharov N, Werner R, Gosele U
424 - 430 Si submonolayer and monolayer digital growth operation techniques using Si2H6 as atomically controlled growth nanotechnology
Suda Y, Hosoya N, Miki K
431 - 435 Characteristics of ZnO whiskers prepared from organic-zinc
Kubota J, Haga K, Kashiwaba Y, Watanabe H, Zhang BP, Segawa Y
436 - 446 Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
Kratzer P, Penev E, Scheffler M
447 - 452 First-principles study for molecular beam epitaxial growth of GaN(0001)
Ishii A
453 - 457 Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE
Kangawa Y, Ito T, Kumagai Y, Koukitu A
458 - 462 Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films
Ito T, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H
463 - 470 First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges
Doi K, Nakamura K, Tachibana A
471 - 477 Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces
Tanaka S, Kohyama M
478 - 482 Dynamics of In atom during InAs/GaAs(001) growth process
Ishii A, Fujiwara K, Aisaka T
483 - 489 A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K
490 - 496 Theoretical study on stable structures and diffusion mechanisms of B in SiO2
Otani M, Shiraishi K, Oshiyama A
497 - 501 Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface
Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H
502 - 507 Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy
Tomida Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H, Liu R, Bell A, Ponce FA
508 - 511 Low-temperature growth of AlN on nearly lattice-matched MnO substrates
Ito S, Fujioka H, Ohta J, Sasaki A, Liu J, Yoshimoto M, Koinuma H, Oshima M
512 - 518 Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer
Ueda T, Ishida M, Yuri M
519 - 525 Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure
Inagaki T, Hashizume T, Hasegawa H
526 - 531 Composition dependence of InP/GaxIn1-xAsyP1-y/InP interface structures analyzed by X-ray CTR scattering measurements
Tabuchi M, Kyouzu H, Takemi M, Takeda Y
532 - 536 Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD
Oda Y, Watanabe N, Yokoyama H, Kobayashi T
537 - 541 AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3))
Akane T, Jinno S, Yang Y, Kuno T, Hirata T, Isogai Y, Watanabe N, Fujiwara Y, Nakamura A, Takeda Y
542 - 548 Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation
Kagiyama T, Saito Y, Otobe K, Nakajima S
549 - 553 Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
Ohno T, Oyama Y, Tezuka K, Suto K, Nishizawa J
554 - 559 Short-period Si/Si1-xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy
Akazawa H
560 - 563 Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy
Koizumi A, Fujiwara Y, Inoue K, Yoshikane T, Urakami A, Takeda Y
564 - 568 Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y
569 - 574 Heteroepitaxial growth of InSb films on a Si(001) substrate via AlSb buffer layer
Mori M, Akae N, Uotani K, Fujimoto N, Tambo T, Tatsuyama C
575 - 579 Initial stage of 3C-SiC growth on Si(001)-2 x 1 surface using monomethylsilane
Narita Y, Inubushi T, Harashima M, Yasui K, Akahane T
580 - 584 Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane
Yasui K, Hashiba M, Akahane T
585 - 589 Mechanism of H-2 pre-annealing on the growth of GaN on sapphire by MOVPE
Tsuda M, Watanabe K, Kamiyama S, Amano H, Akasaki I, Liu R, Bell A, Ponce FA
590 - 595 Study of epitaxial SrTiO3 (STO) thin films grown on Si(001)-2 x 1 substrates by molecular beam epitaxy
Bhuiyan MNK, Matsuda A, Yasumura T, Tambo T, Tatsuyama C
596 - 602 Improved surface morphology of sulfur-doped homoepitaxial diamond films by plasma CVD method with SF6 Grading-Doping profile
Fujii S, Hino S, Kobayashi T
603 - 606 Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p-i-n diode
Satoh I, Kobayashi T
607 - 613 Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(100) substrates
Uchitomi N, Sato S, Jinbo Y
614 - 619 Growth of beta-FeSi2 on MnSi1.7 layers by reactive deposition epitaxy
Kohira M, Souno Y, Matsuyama T, Tatsuoka H, Ohsugi IJ, Nishida IA, Kuwabara H
620 - 624 Formation of CaMgSi at Ca2Si/Mg2Si interface
Hosono T, Kuramoto A, Matsuzawa Y, Momose Y, Maeda Y, Matsuyama T, Tatsuoka H, Fukuda Y, Hashimoto S, Kuwabara H
625 - 629 Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices
Sulaimanov AK, Braginsky LS, Gilinsky AM, Toropov AI, Bakarov AK, Zhuravlev KS