화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.512 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (41 articles)

1 - 5 Crystal growth, optical and luminescence properties of Na6Mo11O36 single crystal
Pandey IR, Karki S, Kim HJ, Lee MH, Kim YD
6 - 10 Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
Desplanque L, Bucamp A, Troadec D, Patriarche G, Wallart X
11 - 15 Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
Bucamp A, Coinon C, Codron JL, Troadec D, Wallart X, Desplanque L
16 - 19 Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H
20 - 32 Effect of ultrasonic treatment on the alloying and grain refinement efficiency of a Mg - Zr master alloy added to magnesium at hypo- and hyper-peritectic compositions
Nagasivamuni B, Wang G, StJohn DH, Dargusch MS
33 - 36 Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping
Sasaki T, Takahasi M
37 - 40 Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy
Piedra-Lorenzana JA, Yamane K, Shiota K, Fujimoto J, Tanaka S, Sekiguchi H, Okada H, Wakahara A
41 - 46 Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints
Ito T, Akiyama T, Nakamura K
47 - 60 Effect of zero, normal and hyper-gravity on columnar dendritic solidification and the columnar-to-equiaxed transition in Neopentylglycol-(D)Camphor alloy
Zimmermann G, Hamacher M, Sturz L
61 - 64 Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy
Huang WG, Gu Y, Chen XY, Zhang J, Gong Q, Huang H, Ma YJ, Zhang YG
65 - 68 Reduced radial resistivity variation of FZ Si wafers with Advanced NTD
Lei A, Graesvaenge M, Hindrichsen C
69 - 73 Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D
74 - 77 Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates
Lu XM, Minami Y, Kitada T
78 - 83 Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H
84 - 89 Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy
Zhang J, Chen XY, Ma YJ, Gong Q, Shi YH, Yang NN, Huang H, He GX, Gu Y, Zhang YG
90 - 95 Relationship of the shape and size between etch pits and corresponding Te inclusions in CdZnTe crystals
Zhang JJ, Zhu LH, Sun SW, Yu HX, Xu C, Yang JR
96 - 99 Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates
Ishii K, Amagasu R, Nomura I
100 - 104 Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
Dinh DV, Amano H, Pristovsek M
105 - 111 Crystallization process and growth mechanism for hexagonal prism of strontium hydroxyapatite by urea hydrolysis
Huang JS, Huang ZL, Yao DH, Wu CS, Cheng YL, Wu FJ
112 - 118 Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor
Chang J, Choi S, Lee KJ, Bac SK, Choi S, Chongthanaphisut P, Lee S, Liu XY, Dobrowolska M, Furdyna JK
119 - 123 Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy
Yamada H, Chonan H, Yamada T, Shimizu M
124 - 130 Epitaxial growth of Cu2O on Cu substrate - A combinatorial substrate approach
Yeh HH, Wen MC, Chang L, Ploog KH, Chou MMC
131 - 135 Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing
Hayashi Y, Tanigawa K, Uesugi K, Shojiki K, Miyake H
136 - 141 Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (001) Ge substrate
Zon, Thainoi S, Kiravittaya S, Tandaechanurat A, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
142 - 146 Stabilization of sputtered AlN/sapphire templates during high temperature annealing
Hagedorn S, Walde S, Mogilatenko A, Weyers M, Cancellara L, Albrecht M, Jaeger D
147 - 151 Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing
Okada N, Inomata Y, Ikeuchi H, Fujimoto S, Itakura H, Nakashima S, Kawamura R, Tadatomo K
152 - 158 High temperature molten flux growth, structural and optical characteristics of KTiOPO4:Ho and KTiOPO4:Er single crystals
Sadhasivam S, Perumal RN
159 - 163 Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells
Chevuntulak C, Rakpaises T, Sridumrongsak N, Thainoi S, Kiravittaya S, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Tandaechanurat A, Panyakeow S
164 - 168 Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(111)B
Henksmeier T, Shvarkov S, Trapp A, Reuter D
169 - 175 Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
Mukherjee K, Vaisman M, Callahan PG, Lee ML
176 - 180 Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer
Lee S, Lee KJ, Choi S, Bac SK, Chang J, Choi S, Chongthanaphisut P, Lee S, Liu XY, Dobrowolska M, Furdyna JK
181 - 188 Growth and characterization of diphenylmethanol single crystal by vertical Bridgman technique for second and third order nonlinear optical applications
Arivazhagan T, Vinitha G, Rajesh NP
189 - 193 Pursuit of single domain ZnTe layers on sapphire substrates
Kobayashi M
194 - 197 Epitaxial growth of Co2FeSi/MgO/GaAs(001) heterostructures using molecular beam epitaxy
Hoffmann G, Jenichen B, Herfort J
198 - 202 Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field
Lekwongderm P, Chumkaew R, Thainoi S, Kiravittaya S, Tandaechanurat A, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
203 - 207 Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells
Deligiannakis V, Dhomkar S, Claro MS, Kuskovsky IL, Tamargo MC
208 - 212 Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE
Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C
213 - 218 Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
Yang WX, Zhao YK, Wu YY, Li XF, Xing ZW, Bian LF, Lu SL, Luo MC
219 - 222 Droplet etching with indium - Intermixing and lattice mismatch
Zocher M, Heyn C, Hansen W
223 - 229 Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M
230 - 240 Extension of Jackson-Hunt analysis for curved solid-liquid interfaces
Nani ES, Nestler B