화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.458 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (23 articles)

1 - 7 Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells
Oshima R, France RM, Geisz JF, Norman AG, Steiner MA
8 - 15 Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition
Jung JS, Lee SH, Kim DS, Kim KS, Park SW, Hwang NM
16 - 26 Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr-14(Cu, Co)(24)O-41
Bag R, Karmakar K, Singh S
27 - 30 Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure
Tatsumi N, Tamasaku K, Ito T, Sumiya H
31 - 36 Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket
Zhao WH, Liu LJ
37 - 43 Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents
Komatsu N, Mitani T, Hayashi Y, Kato T, Harada S, Ujihara T, Okumura H
44 - 52 Crystal growth of aragonite in the presence of phosphate
Tadier S, Rokidi S, Rey C, Combes C, Koutsoukos PG
53 - 59 An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
Ahia CC, Tile N, Urgessa ZN, Botha JR, Neethling JH
60 - 65 The effect of glycine on the growth of calcium carbonate in alkaline silica gel
Gan X, He KH, Qian BS, Deng Q, Lu LX, Wang Y
66 - 71 Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot
Sun JF, He QX, Ban BY, Bai XL, Li JW, Chen J
72 - 79 A new heating stage for high Temperature/low fO(2) conditions
Tissandier L, Florentin L, Lequin D, Baillot P, Faure F
80 - 86 Modelling and experiments for the convecto-diffusive removal of impurities from the solidification front
Altenberend J, Delannoy Y, Nehari A, Chichignoud G, Zaidat K
87 - 95 Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy
Felix R, Volz K, Gries KI
96 - 102 Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst
Mavel A, Chauvin N, Regreny P, Patriarche G, Masenelli B, Gendry M
103 - 109 Preparation of a 1:1 cocrystal of genistein with 4,4'-bipyridine
Zhang YN, Yin HM, Zhang Y, Zhang DJ, Su X, Kuang HX
110 - 114 The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
Ji L, Tan M, Ding C, Honda K, Harasawa R, Yasue Y, Wu Y, Dai P, Tackeuchi A, Bian L, Lu S, Yang H
115 - 119 Effects of cooling interval and MnO2, TiO2, CdO, NiO additions on spheluritic willemite crystals
Coskun ND, Uz V, Issi A, Genc S, Caki M
120 - 128 Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling
Lanterne A, Gaspar G, Hu Y, Ovrelid E, Di Sabatino M
129 - 132 Some remarks on cooling curves as a principle tool for solidification characterization
Ghomashchi R, Nafisi S
133 - 139 Effect of growth promoters on chemistry synthesis of Cr3C2 nanowhiskers from water-soluble precursors
Yang RS, Jin YZ, Zhang ZQ, Liu DL
140 - 148 The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor
Gkinis PA, Aviziotis IG, Koronaki ED, Gakis GP, Boudouvis AG
149 - 153 Unequal growth of twinned variants in boron-rich fivefold twinned nanowires
Yu ZY, Jiang J, Zhu J
154 - 165 On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman method
Ben Sassi M, Kaddeche S, Lappa M, Millet S, Henry D, Ben Hadid H