Thin Solid Films

Thin Solid Films, Vol.427, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (83 articles)

1 - 5	Cluster-suppressed plasma CVD for deposition of high quality a-Si : H films Shiratani M, Koga K, Watanabe Y
6 - 10	Polymorphous silicon deposited in large area reactor at 13 and 27 MHz Aguas H, Cabarrocas PRI, Lebib S, Silva V, Fortunato E, Martins R
11 - 15	Surface diffusion of SiH3 radicals and growth mechanism of a-Si : H and microcrystalline Si Dewarrat R, Robertson J
16 - 20	VHF plasma processing for in-line deposition systems Rudiger J, Brechtel H, Kottwitz A, Kuske J, Stephan U
21 - 26	Development of a numerical simulation tool to study uniformity of large area PECVD film processing Sansonnens L, Bondkowski J, Mousel S, Schmitt JPM, Cassagne V
27 - 32	Relationship between microstructure and photovoltaic performance in microcrystalline silicon film solar cells fabricated by a high-density microwave plasma Ohkawara G, Nakajima M, Ueyama H, Shirai H
33 - 36	A novel approach for the growth of Rc-Si at a high rate over 3 nm/s Tanda M, Kondo M, Matsuda A
37 - 40	High rate growth of microcrystalline silicon by VHF-GD at high pressure Graf U, Meier J, Kroll U, Bailat J, Droz C, Vallat-Sauvain E, Shah A
41 - 45	Investigation of scaling-up issues in hot-wire CVD of polycrystalline silicon van der Werf CHM, Hardeman AJ, van Veenendaal PATT, van Veen MK, Rath JK, Schropp REI
46 - 50	Preparation of microcrystalline silicon seed-layers with defined structural properties Vetterl O, Hulsbeck M, Wolff J, Carius R, Finger E
51 - 55	Defects and transport properties of electron-irradiated microcrystalline silicon with successive annealing Bronner W, Kleider JP, Bruggemann R, Mehring M
56 - 59	High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 degrees C Cheng IC, Wagner S
60 - 66	Progressive degradation in a-Si : H/SiN thin film transistors Merticaru AR, Mouthaan AJ, Kuper FG
67 - 70	Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTs Kasouit S, Cabarrocas PRI, Vanderhaghen R, Bonassieux Y, Elyaakoubi M, French I, Rocha J, Vitoux B
71 - 76	Dependence of TFT performance on the dielectric characteristics Lavareda G, de Carvalho CN, Amaral A, Fortunato E, Ramos AR, da Silva ME
77 - 85	Advanced excimer-laser crystallization process for single-crystalline thin film transistors Ishihara R, van der Wilt PC, van Dijk BD, Burtsev A, Metselaar JW, Beenakker CIM
86 - 90	Excimer laser crystallization of amorphous silicon on metal coated glass substrates Brendel K, Nickel NH, Lengsfeld P, Schopke A, Sieber I, Nerding M, Strunk HP, Fuhs W
91 - 95	Crystallization mechanisms in laser irradiated thin amorphous silicon films Mariucci L, Pecora A, Fortunato G, Spinella C, Bongiorno C
96 - 100	Enhancement of bulk nucleation in a-Si1-xGex onSiO(2) for low-temperature solid-phase crystallization Sadoh T, Tsunoda I, Nagata T, Kenjo A, Miyao M
101 - 107	Parametric investigation of SLS-processed poly-silicon thin films for TFT applications Crowder MA, Moriguchi M, Mitani Y, Voutsas AT
108 - 112	Influence of precursors gases on LPCVD TFT's characteristics Rogel R, Gautier G, Coulon N, Sarret M, Bonnaud O
113 - 116	Origin of low frequency noise in polycrystalline silicon thin-film transistors Dimitriadis CA, Brini J, Kamarinos G
117 - 122	A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs Valletta A, Mariucci L, Pecora A, Fortunato G, Ayres JR, Brotherton SD
123 - 126	Time-of-flight measurements of carrier drift mobilities in polymorphous silicon Brinza M, Adriaenssens GJ, Cabarrocas PRI
127 - 132	Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors Kleider JP
133 - 136	Analysis and modelling of generation-recombination noise in amorphous semiconductors Badran RI, Main C, Reynolds S
137 - 141	Ellipsometric characterization of expanding thermal plasma deposited SiO2-like films Creatore M, Kilic M, O'Brien K, Groenen R, van de Sanden MCM
142 - 146	Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications Mandracci P, Ferrero S, Ricciardi C, Scaltrito L, Richieri G, Sgorlon C
147 - 151	Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O-2 precursor combination Sundqvist J, Harsta A, Aarik J, Kukli K, Aidla A
152 - 156	Standing wave detection by thin transparent n-i-p diodes of amorphous silicon Stiebig H, Buchner HJ, Bunte E, Mandryka V, Knipp D, Jager G
157 - 165	Microcrystalline silicon for large area thin film solar cells Rech B, Roschek T, Repmann T, Muller J, Schmitz R, Appenzeller W
166 - 170	Experimental realization of field effect a-Si : H solar cells De Cesare G, Chicarella E, Palma E, Nobile G, Tucci M
171 - 175	Study of the interface in n(+)mu-Si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivation Losurdo M, Grimaldi A, Sacchetti A, Capezzuto P, Ambrico M, Bruno G, Roca F
176 - 180	Laser-crystallized microcrystalline SiGe alloys for thin film solar cells Eisele C, Berger M, Nerding M, Strunk HP, Nebel CE, Stutzmann M
181 - 186	Low-temperature thin-film silicon MEMS Conde JP, Gaspar J, Chu V
187 - 190	Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems Ricciardi C, Bennici E, Cocuzza M, Mandracci R, Bich D, Guglielmetti V, Barucca G
191 - 195	A novel a-Si : H mechanical stress sensor de Cesare G, Gavesi M, Palma E, Ricco B
196 - 200	Bias controlled spectral sensitivity in a-SiC : H p-i-n devices Louro P, Vieira M, Fantoni A, Fernandes M, Vygranenko Y, Schwarz R
201 - 207	Surface functionalization of amorphous silicon and silicon suboxides for biological applications Dahmen C, Janotta A, Dimova-Malinovska D, Marx S, Jeschke B, Nies B, Kessler H, Stutzmann M
208 - 214	Deposition of transparent conductive tin oxide thin films doped with fluorine by PACVD Arefi-Khonsari E, Bauduin N, Donsanti F, Amouroux J
215 - 218	Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates-dependence on oxygen partial pressure de Carvalho CN, Lavareda G, Fortunato E, Amaral A
219 - 224	Modelling and experimental study of an O-2/Ar/tetramethyltin discharge used for the deposition of transparent conductive thin tin oxide films Morscheidt W, Hassouni K, Arefi-Khonsari F, Amouroux J
225 - 230	From porous to compact films by changing the onset conditions of HW-CVD process Ferreira I, Costa MEV, Fortunato E, Martins R
231 - 235	Combining HW-CVD and PECVD techniques to produce a-Si : H films Ferreira I, Fortunato E, Martins R
236 - 240	Plasma studies under polymorphous silicon deposition conditions Kharchenko AV, Suendo V, Cabarrocas PRI
241 - 246	What makes a thin films semiconductor suitable for solar cells applications? Saadane O, Longeaud C, Lebib S, Cabarrocas RRI
247 - 251	Study of pm-SiGe : H thin films for p-i-n devices and tandem solar cells Gueunier ME, Kleider JP, Chatterjee P, Cabarrocas RRI, Poissant Y
252 - 258	Pronounced crystallization of silicon layers deposited with high deposition rates at temperatures <= 200 degrees C Leconte Y, Marie P, Portier X, Lejeune M, Rizk R
259 - 265	The properties of fluoride/glass and fluoride/silicon Ko JK, Kim DY, Park JH, Choi SW, Park SH, Yi JS
266 - 269	Raman spectroscopy of B-doped microcrystalline silicon films Saleh R, Nickel NH
270 - 273	Alternative phosphorus-doped amorphous silicon using trimethylphosphine diluted in hydrogen Terasa R, Albert M, Bartha JW, Roessler T, Abramov AS, Kosarev AI, Kuduyarova V, Vinogradov A
274 - 278	Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111) Schwarzkopf J, Selle B, Schmidbauer M, Fuhs W
279 - 283	Properties of a-SiC : H films deposited in high power regime Ambrosone G, Ballarini V, Coscia U, Ferrero S, Giorgis E, Maddalena P, Patelli A, Rava P, Rigato V
284 - 288	Power density effects on the growth of microcrystalline silicon-carbon alloys by PECVD Coscia U, Ambrosone G, Lettieri S, Maddalena P, Rava P, Minarini C
289 - 293	Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization Choi JH, Kim DY, Park SJ, Choo BK, Jang J
294 - 297	Nickel-enhanced low-temperature epitaxial growth of silicon Uchida Y, Katsumata N, Ishida K
298 - 302	Preparation of thin polycrystalline silicon films on glass by aluminium-induced crystallisation - an electron microscopy study Sieber I, Schneider R, Doerfel I, Schubert-Bischoff R, Gall S, Fuhs W
303 - 308	High temperature crystallized poly-Si on Mo substrates for TFT application Park JH, Kim DY, Ko JK, Chakrabarty K, Yi J
309 - 313	Phase-field modelling of excimer laser lateral crystallization of silicon thin films Burtsev A, Apel M, Ishihara R, Beenakker CIM
314 - 318	Lateral growth control by thickness spatial modulation of amorphous silicon film Pecora A, Mariucci L, Piperno S, Fortunato G
319 - 323	Observation of super lateral growth in long pulse (170 ns) excimer laser crystallization of a-Si films Pecora A, Carluccio R, Mariucci L, Fortunato G, Murra D, Bollanti S, Di Lazzaro P
324 - 329	Current assisted germanium-induced crystallization of amorphous silicon Derakhshandeh J, Golshani N, Mohajerzadeh S, Soleimani EA
330 - 334	Low temperature stress-induced crystallization of germanium on plastic Shahrjerdi D, Hekmatshoar B, Rezaee L, Mohajerzadeh SS
335 - 339	DTRMC, a probe of transverse transport in microcrystalline silicon Kasouit S, Cabarrocas PRI, Vanderhaghen R
340 - 344	State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior Toutah H, Llibre JF, Tala-Ighil B, Boudart B, Mohammed-Brahim T
345 - 349	Spectroscopic ellipsometry study of amorphous silicon anodically oxidised Aguas H, Goncalves A, Pereira L, Silva R, Fortunato E, Martins R
350 - 354	Meyer-Neldel parameter as a figure of merit for quality of thin-film-transistor active layer? Pichon L, Mercha A, Routoure JM, Carin R, Bonnaud O, Mohammed-Brahim T
355 - 357	Parameters for photoelectronic characterisation and the Fermi level in amorphous silicon Bruggemann R
358 - 361	Thickness dependence of optical scattering and surface roughness in microcrystalline silicon Bruggemann R, Reinig P, Holling M
362 - 366	Design of a polysilicon-on-insulator pressure sensor with original polysilicon layout for harsh environment Malhaire C, Barbier D
367 - 370	Pentacene thin-films obtained by thermal evaporation in high vacuum Puigdollers J, Voz C, Orpella A, Martin I, Vetter M, Alcubilla R
371 - 376	Study of organic thin film transistors based on nickel phthalocyanine: effect of annealing Ben Chaabane R, Ltaief A, Dridi C, Rahmouni H, Bouazizi A, Ben Ouada H
377 - 380	Plasma and injection modification of the gate dielectric in MOS structures Bondarenko GG, Andreev VV, Maslovsky VM, Stolyarov AA, Drach VE
381 - 385	Characterization of carrier generation and transport mechanisms in single-crystal and thin-film HgI2 Khadilkar U, Mamazza R, Ferekides CS, Morel DL, DeVito R, Sandoval J, van den Berg L
386 - 390	Improvement of the properties of commercial SnO2 by Cd treatment Napo K, Allah FK, Bernede JC, Barreau N, Khelil A
391 - 396	Characterisation of HfO2 deposited by photo-induced chemical vapour deposition Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley RK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW
397 - 400	Highly transparent and conducting CdO films grown by chemical spray pyrolysis Reddy KTR, Shanthini GM, Johnston D, Miles RW
401 - 405	Influence of the deposition pressure on the properties of transparent and conductive ZnO : Ga thin-film produced by r.f. sputtering at room temperature Assuncao V, Fortunato E, Marques A, Aguas H, Ferreira I, Costa MEV, Martins R
406 - 410	On the physical properties of indium oxide thin films deposited by pyrosol in comparison with films deposited by pneumatic spray pyrolysis Girtan M, Cachet H, Rusu GI
411 - 416	High uniformity deposition with chemical beams in high vacuum Benvenuti G, Halary-Wagner E, Brioude A, Hoffmann P
417 - 421	XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices Lindner JKN, Tsang WM, Wong SP, Xu JB, Wilson IH
422 - 426	Polycrystalline silicon thin films for MEMS applications Mahfoz-Kotb H, Salaun AC, Mohammed-Brahim T, Le Bihan F, El-Marssi M
427 - 431	Substrate influence on the response of sol-gel derived SnO2 gas-sensors Dima A, Dima O, Moldovan C, Cobianu C, Savaniu C, Zaharescu M