1 - 6 |
Detection of deposition rate of plasma-polymerized silicon-containing films by quartz crystal microbalance Kurosawa S, Aizawa H, Miyake J, Yoshimoto M, Hilborn J, Talib ZA |
7 - 11 |
Effects of electron temperature on the quality of a-Si : H and mu Kurimoto Y, Shimizu T, Iizuka S, Suemitsu M, Sato N |
12 - 17 |
Formation of nanocrystalline silicon dots from chlorinated materials by RF plasma-enhanced chemical vapor deposition Shirai H, Fujimura Y, Jung S |
18 - 25 |
Formation of diamond and nanocrystalline diamond films by microwave plasma CVD Hiramatsu M, Lau CH, Bennett A, Foord JS |
26 - 31 |
Experimental study of fullerene-family formation using radio-frequency-discharge reactive plasmas Ishida H, Satake N, Jeong GH, Abe Y, Hirata T, Hatakeyama R, Tohji K, Motomiya K |
32 - 37 |
Production and control of La plasma and application to fullerene-related material process Hirata T, Otomo Y, Hatakeyama R |
38 - 44 |
Effects of chlorine on tribological properties of TiN films prepared by pulsed d.c. plasma-enhanced chemical vapor deposition Kawata K, Sugimura H, Takai O |
45 - 49 |
Characteristics of ultra water-repellent thin films prepared by combined process of microwave plasma-enhanced CVD and oxygen-plasma treatment Wu YY, Inoue Y, Sugimura H, Takai O, Kato H, Murai S, Oda H |
50 - 53 |
Co-operation process of plasma CVD and sputtering, using methane, SF6 and Ar mixture gas, and gold plate discharge electrode Matsushita M, Kashem A, Morita S |
54 - 59 |
Optimization for plasma spraying processes by numerical simulation Sato T, Solonenko OP, Nishiyama H |
60 - 66 |
Lithium niobate-tantalate thin films on Si by thermal plasma spray CVD Kulinich SA, Yamamoto H, Shibata J, Terashima K, Yoshida T |
67 - 71 |
High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique Yang HS, Iwamoto C, Yoshida T |
72 - 78 |
Silicon inclusion effect on fullerene formation under induction thermal plasma condition Wang C, Imahori T, Tanaka Y, Sakuta T, Takikawa H, Matsuo H |
79 - 85 |
Synthesis and structural characterization of titanium oxides and composites by thermal plasma oxidation of titanium carbide Li YL, Ishigaki T |
86 - 91 |
Preparation of Al-doped ZnO thin films by RF thermal plasma evaporation Tsujino J, Homma N, Sugawara T, Shimono I, Abe Y |
92 - 97 |
Integrated synthesis of AMTEC electrode by using controlled thermal plasma processing Mukunoki H, Fukumasa O, Sakiyama S |
98 - 103 |
Electrode phenomena investigation of wire arc spraying for preparation of Ti-Al intermetallic compounds Watanabe T, Sato T, Nezu A |
IX - IX |
Proceedings of the 14th Symposium on Plasma Science for Materials (SPSM-14) - Tokyo, Japan, 13-14 June 2001 - Preface Kono A, Ishigaki T, Sakuta T, Samukawa S, Terashima K |
104 - 108 |
Electron field emission from thin films of amorphous carbon nitride synthesized by arc ion plating Sugimura H, Sato Y, Ando Y, Tajima N, Takai O |
109 - 113 |
Magnetic properties of nanosize NiFe2O4 particles synthesized by pulsed wire discharge Kinemuchi Y, Ishizaka K, Suematsu H, Jiang WH, Yatsui K |
114 - 117 |
Growth of GaN on NdGaO3 substrates by pulsed laser deposition Takahashi H, Ohta J, Fujioka H, Oshima M |
118 - 121 |
Preparation of Cr(N-x,O-y) thin films by pulsed laser deposition Suzuki T, Saito H, Hirai M, Suematsu H, Jiang WH, Yatsui K |
122 - 125 |
Oxidation behavior of Cr-Al-N-O thin films prepared by pulsed laser deposition Hirai M, Saito H, Suzuki T, Suematsu H, Jiang WH, Yatsui K |
126 - 131 |
Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process Aoqui S, Miyata H, Ohshima T, Ikegami T, Ebihara K |
132 - 135 |
Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation Suematsu H, Kitajima K, Ruiz I, Kobayashi K, Takeda M, Shimbo D, Suzuki T, Jiang W, Yatsui K |
136 - 138 |
Photoluminescence properties of crystallized strontium aluminate thin films prepared by ion-beam evaporation Suematsu H, Sengiku M, Kato K, Mitome M, Kimoto K, Matsui Y, Jiang W, Yatsui K |
139 - 143 |
Direct observation of surface dangling bonds during plasma process: chemical reactions during H-2 and Ar plasma treatments Yamasaki S, Das UK, Ishikawa K |
144 - 150 |
Mechanically-amplified plasma processing for drug engineering Kuzuya M, Sasai Y, Mouri M, Kondo S |
151 - 155 |
Surface modification of adsorbents by dielectric barrier discharge Kodama S, Habaki H, Sekiguchi H, Kawasaki J |
156 - 162 |
Inner wall modification of a poly(ethylene terephthalate) (PET) capillary by 13.56 MHz capacitively coupled microplasma Yoshiki H, Oki A, Ogawa H, Horiike Y |
163 - 168 |
Effects of pressure on the cleaning action of cathode spot in low vacuum Takeda K, Takeuchi S |
169 - 173 |
Aromatic cyanation in contact glow discharge electrolysis of acetonitrile Tezuka M, Iwasaki M |
174 - 178 |
Advanced oxidation processes using pulsed streamer corona discharge in water Sugiarto AT, Ohshima T, Sato M |
179 - 185 |
Separation mechanism of iron and cobalt components from alloys using oxygen-chlorine arc plasmas Takeuchi A, Tanaka K, Tanahashi N, Watanabe T |
186 - 191 |
Stabilization of pulverized coal combustion by plasma assist Sugimoto M, Maruta K, Takeda K, Solonenko OP, Sakashita M, Nakamura M |
192 - 197 |
Profile control of large-area rectangular plasma in a modified-magnetron-type RF discharge Koshimizu T, Sato M, Ogawa U, Iizuka S, Sato N |
198 - 203 |
Behaviors of electron and negative-ion densities in low-pressure high-density inductively coupled plasmas of SF6, NF3, CF4, and C4F8 gases diluted with Ar Kono A, Konishi M, Kato K |
204 - 208 |
Determination of negative ion density in reactive gas plasmas using ion acoustic waves Shindo M, Kawai Y |
209 - 214 |
Change of magnetized plasma performance by inserted voltage biased plate Shinohara S, Matsuyama S, Kaneko O |
215 - 220 |
Effect of electrostatic waves on a rf field penetration into highly collisional helicon plasmas Shinohara S, Shamrai KP |
221 - 226 |
Influence of gap length and pressure on medium vacuum arc with Ti cathode in various ambient gases Miyano R, Saito T, Takikawa H, Sakakibara T |