화학공학소재연구정보센터

Thin Solid Films

Thin Solid Films, Vol.321, No.1-2 Entire volume, number list
ISSN: 0040-6090 (Print) 

In this Issue (48 articles)

1 - 10 Si/Si1-xGex and Si/Si1-yCy heterostructures: materials for high-speed field-effect transistors
Schaffler F
11 - 14 Carbon-containing group IV heterostructures on Si : properties and device applications
Osten HJ, Barth R, Fischer G, Heinemann B, Knoll D, Lippert G, Rucker H, Schley P, Ropke W
15 - 20 Optimization of growth conditions for strained Si/Si1-yCy structures
Joelsson KB, Ni WX, Pozina G, Hultman L, Hansson GV
21 - 25 Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices
Lippert G, Osten HJ, Blum K, Sorge R, Schley P, Kruger D, Fischer G
26 - 32 Low-temperature molecular beam epitaxy of Si1-x-yGexCy/Si quantum well structures : electrical and optical properties
Grutzmacher D, Hartmann R, Schnappauf P, Gennser U, Muller E, Bachle D, Dommann A
33 - 40 Molecular beam epitaxial growth and photoluminescence investigation of Si1-yCy layers
Zerlauth S, Penn C, Seyringer H, Stangl J, Brunthaler G, Bauer G, Schaffler F
41 - 46 Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition
Hoyt JL, Mitchell TO, Rim K, Singh DV, Gibbons JF
47 - 50 Electrical and optical properties of phosphorus doped Ge1-yCy
Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J
51 - 54 Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/Si(100) modulation doped heterostructures
Chang CL, Shukla SP, Pan W, Venkataraman V, Sturm JC, Shayegan M
55 - 59 Alignment of Ge three-dimensional islands on faceted Si(001) surfaces
Sakamoto K, Matsuhata H, Tanner MO, Wang DW, Wang KL
60 - 64 Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)
Jiang ZM, Zhu HJ, Lu F, Qin J, Huang DM, Wang X, Hu CW, Chen YF, Zhu ZQ, Yao T
65 - 69 Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot
Fukatsu S, Sunamura H, Shiraki Y, Komiyama S
70 - 75 Influence of pre-grown carbon on the formation of germanium dots
Schmidt OG, Lange C, Eberl K, Kienzle O, Ernst F
76 - 80 Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate
Tang YS, Cai SJ, Jin GL, Wang KL, Soyez HM, Dunn BS
81 - 85 Gas-source molecular beam epitaxial growth of SiGe alloy-based 'naked' quantum wells
Kishimoto Y, Shiraki Y, Fukatsu S
86 - 91 Characterization of self-assembled Ge islands on Si(100) by atomic force microscopy and transmission electron microscopy
Wohl G, Schollhorn C, Schmidt OG, Brunner K, Eberl K, Kienzle O, Ernst F
92 - 97 Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates
Pedersen EV, Jensen F, Shiryaev SY, Petersen JW, Hansen JL, Larsen AN
98 - 105 Fabrication of SiGe quantum dots : a new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces
Le Thanh V
106 - 110 Quantum wire transistor at locally grown edges
Kaesen F, Hansch W, Eisele I, Kalus M
111 - 115 Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition
Joo SJ, Yoon E, Hwang SH, Whang KW, Chun SK, Kim YD
116 - 119 Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate
Jiang ZM, Xu A, Hu DZ, Zhu HJ, Liu XH, Wang XJ, Mao MC, Zhang XJ, Hu JH, Huang DM, Wang X
120 - 124 Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si
Thompson PE, Silvestre C, Twigg M, Jernigan G, Simons DS
125 - 130 Surfactant-grown low-doped germanium layers on silicon with high electron mobilities
Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M
131 - 135 Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy
Ni WX, Hansson GV, Cardenas J, Svensson BG
136 - 140 Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors
Hackbarth T, Kibbel H, Glueck M, Hoeck G, Herzog HJ
141 - 147 X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD
Baribeau JM, Lafontaine H
148 - 152 Quantitative secondary ion mass spectrometry analysis of SiO2 desorption during in situ heat cleaning
Kasper E, Bauer M, Oehme M
153 - 157 Spontaneous oscillator strength modulation in MBE-grown Si/Ge superlattices
Miyake Y, Shiraki Y, Fukatsu S
158 - 162 Photoluminescence in UHV-CVD-grown Si1-xGex quantum wells on Si(100) : band alignment variation with excitation density and applied uniaxial stress
Rowell NL, Aers GC, Lafontaine H, Williams RL
163 - 166 Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices
Liu XH, Huang DM, Wang XJ, Zhu HJ, Wang X
167 - 171 Structural characterization of a UHV/CVD-grown SiGe HBT with graded base
Dion M, Houghton DC, Rowell NL, Perovic DD, Aers GC, Rolfe SJ, Sproule GI, Phillips JR
172 - 180 Silicon germanium heterostructures in electronics : the present and the future
Paul DJ
181 - 185 Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates
Paul DJ, Ahmed A, Griffin N, Pepper M, Churchill AC, Robbins DJ, Wallis DJ
186 - 195 Near and mid infrared silicon/germanium based photodetection
Presting H
196 - 200 Formation of thin gate oxides on SiGe with atomic oxygen
Ogryzlo EA, Zheng L, Heinrich B, Myrtle K, Lafontaine H
201 - 205 Bistable diodes grown by silicon molecular beam epitaxy
Zhu XG, Zheng XY, Pak M, Tanner MO, Wang KL
206 - 214 Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs
Hansch W, Rao VR, Fink C, Kaesen F, Eisele I
215 - 218 Quantum confined Stark shifts in type-I SiGe quantum structures
Kim JY
219 - 222 Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Neufeld E, Sticht A, Brunner K, Abstreiter G, Bay H, Buchal C, Holzbrecher H
223 - 227 Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy
Ni WX, Joelsson KB, Du CX, Pozina G, Buyanova IA, Chena WM, Hansson GV, Monemar B
228 - 233 Application of selective epitaxial growth in MBE for short-duration gating systems
Cers VA, Ballik EA
234 - 240 Epitaxial Si/SiO2 low dimensional structures
Ishikawa Y, Shibata N, Fukatsu S
241 - 244 Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell
Yaguchi H, Yamamoto T, Shiraki Y
245 - 250 Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
Brunner K, Dobler H, Abstreiter G, Schafer H, Lustig B
251 - 255 Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100)
Mantl S, Hacke M, Bay HL, Kappius L, Mesters S
256 - 260 Si selective epitaxial growth using Cl-2 pulsed molecular flow method
Aoyama T, Saito S, Tatsumi T
261 - 264 Low temperature electrical surface passivation of MBE-grown pin diodes by hydrogen and oxygen plasma processes
Strass A, Hansch W, Kaesen F, Fehlauer G, Bieringer P, Fischer A, Eisele I
VIII - VIII Proceedings of the 7th International Symposium on Silicon Molecular Beam Epitaxy - Banff, Canada, July 13-17, 1997 - Preface
Baribeau JM