화학공학소재연구정보센터

Materials Science Forum

Materials Science Forum, Vol.389-3 Entire volume, number list
ISSN: 0255-5476 (Print) 

In this Issue (371 articles)

3 - 8 Silicon carbide technology in new era
Matsunami H
9 - 14 Characterisation and defects in silicon carbide
Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E
15 - 20 Opportunities and technical strategies for silicon carbide device development
Cooper JA
23 - 28 High quality SiC substrates for semiconductor devices: From research to industrial production
Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH
29 - 34 Growth and defect reduction of bulk SiC crystals
Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H
35 - 38 Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport
Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG
39 - 42 Lateral enlargement of silicon carbide crystals
Jacobson H, Yakimova R, Raback P, Syvajarvi M, Birch J, Janzen E
43 - 46 Numerical simulation of heat and mass transfer in SiC sublimation growth
Nishizawa S, Kato T, Kitou Y, Oyanagi N, Arai K
47 - 50 4H polytype grain formation in PVT-grown 6H-SiC ingots
Fujimoto T, Katsuno M, Ohtani N, Aigo T, Yashiro H
51 - 54 The development of 2in 6H-SiC wafer with high thermal-conductivity
Miyanagi Y, Nakayama K, Shiomi H, Nishino S
55 - 58 Evolution of crystal mosaicity during physical vapor transport growth of SiC
Katsuno M, Ohtani N, Fujimoto T, Aigo T, Yashiro H
59 - 62 Reduction of macrodefects in bulk SiC single crystals
Balkas CM, Maltsev AA, Roth MD, Heydemann VD, Sharma M, Yushin NK
63 - 66 Model for macroscopic slits in 6H-and 4H-SiC single crystals
Wollweber J, Rost HJ, Schulz D, Siche D
67 - 70 Macrodefect generation in SiC single crystals caused by polytype changes
Rost HJ, Doerschel J, Schulz D, Siche D, Wollweber J
71 - 74 The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide
Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A
75 - 78 Characterization of inclusions in SiC bulk crystals grown by modified Lely method
Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K
79 - 82 Observation of planar defects in 2-inch SiC wafer
Tanaka H, Nishiguchi T, Sasaki M, Nishino S
83 - 86 Flux-controlled sublimation growth by an inner guide-tube
Kitou Y, Bahng W, Kato T, Nishizawa S, Arai K
87 - 90 Growth 3nd evaluation of high quality SiC crystal by sublimation method
Oyanagi N, Yamaguchi H, Kato T, Nishizawa S, Arai K
91 - 94 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
Wellmann PJ, Herro Z, Straubinger TL, Winnacker A
95 - 98 Influence of the crystal thickness on the SiCPVT growth rate
Cherednichenko D, Khlebnikov Y, Drachev RV, Khlebnikov II, Sudarshan TS
99 - 102 Micropipe formation model via surface step interaction
Ohtani N, Katsuno M, Fujimoto T, Aigo T, Yashiro H
103 - 106 Self-healing phenomenon of micropipes in silicon carbide
Okamoto A, Seno Y, Sugiyama N, Hirose F, Hara K, Tani T, Nakamura D, Kamiya N, Onda S
107 - 110 A method of reducing micropipes in thin films by using sublimation growth
Oyanagi N, Nishizawa S, Arai K
111 - 114 Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth
Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K
115 - 118 The effect of nitrogen on crystal growth of SiC on (11(2)over-bar0) substrates
Nishiguchi T, Masuda Y, Ohshima S, Nishino S
119 - 122 Temperature dependence of sublimation growth of 6H-SiC on (11(2)over-bar0) substrates
Nishiguchi T, Masuda Y, Ohshima S, Nishino S
123 - 126 The development of 4H-SiC {03(3)over-bar8) wafers
Nakayama K, Miyanagi Y, Shiomi H, Nishino S, Kimoto T, Matsunami H
127 - 130 Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth
Bickermann M, Weingartner R, Hofmann D, Straubinger TL, Winnacker A
131 - 134 Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
Straubinger TL, Bickermann M, Rasp M, Weingartner R, Wellmann PJ, Winnacker A
135 - 138 Resistivity mapping of semi-insulating 6H-SiC wafers
Roth MD, Heydemann VD, Mitchel WC, Yushin NK, Sharma M, Wang S, Balkas CM
139 - 142 On the preparation of vanadium-doped semi-insulating SiC bulk crystals
Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A
143 - 146 Solid-phase epitaxial growth of bulk SiC single crystals
Pernot E, Anikin M, Pons M, Chaix-Pluchery O, Baillet F, Matko I, Madar R
147 - 150 Full Si wafer conversion into bulk 3C-SiC
Leycuras A, Tottereau O, Vicente P, Falkovsky L, Girard P, Camassel J
151 - 154 QuaSiC Smart-Cut (R) substrates for SiC high power devices
Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B
155 - 158 CVD SiC powder for high-purity SiC source material
Ezaki S, Saito M, Ishino K
159 - 162 Direct synthesis and growth of SiC single crystal from ultrafine particle precursor
Yamada Y, Sagawa K
165 - 170 Recent achievements and future challenges in SiC homoepitaxial growth
Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H
171 - 174 Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers
Tsuchida H, Kamata I, Jikimoto T, Izumi K
175 - 178 Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD
Fujihira K, Kimoto T, Matsunami H
179 - 182 High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor
Masahara K, Takahashi T, Kushibe M, Ohno T, Nishio J, Kojima K, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K
183 - 186 Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition
Nakamura S, Kimoto T, Matsunami H
187 - 190 Highly uniform epitaxial SiC-layers grown in a hot-wall CVD reactor with mechanical rotation
Schoner A, Konstantinov A, Karlsson S, Berge R
191 - 194 Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Zhang J, Forsberg U, Isacson M, Ellison A, Henry A, Kordina O, Janzen E
195 - 198 Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction
Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
199 - 202 Hot-wall CVD growth of 4H-SiC using Si2Cl6+C3H8+H-2 system
Miyanagi T, Nishino S
203 - 206 Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E
207 - 210 Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system
Wagner G, Leitenberger W, Irmscher K, Schmid F, Laube M, Pensl G
211 - 214 Vapor-phase epitaxial growth of n-type SiC using phosphine as the precursor
Wang RJ, Bhat I, Chow TP
215 - 218 Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition
Nishio J, Kushibe M, Masahara K, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
219 - 222 Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition
Danielsson O, Jonsson S, Henry A, Janzen E
223 - 226 Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
Pons M, Meziere J, Kuan SWT, Blanquet E, Ferret P, Di Cioccio L, Billon T, Madar R
227 - 230 Simulation of high-temperature SiC epitaxial growth using vertical, quasi-hot-wall CVD reactor
Hasegawa M, Miyauchi A, Masahara K, Ishida Y, Takahashi T, Ohno T, Nishio J, Suzuki T, Tanaka T, Yoshida S, Arai K
231 - 234 Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers
Ha S, Mieszkowski P, Rowland LB, Skowronski M
235 - 238 The effect of epitaxial growth on warp of SiC wafers
Nakayama K, Miyanagi Y, Maruyama K, Okamoto Y, Shiomi H, Nishino S
239 - 242 In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth
Zhang J, Kordina O, Ellison A, Janzen E
243 - 246 Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD
Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
247 - 250 Delta-doped layers of SiC grown by'pulse doping' technique
Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
251 - 254 Homoepitaxial'web growth' of SiC to terminate C-axis screw dislocations and-enlarge step-free surfaces
Neudeck PG, Powell JA, Trunek A, Spry D, Beheim GM, Benavage E, Abel P, Vetter WM, Dudley M
255 - 258 Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates
Chen Y, Kimoto T, Takeuchi Y, Matsunami H
259 - 262 Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
Kakanakova-Georgieva A, Yakimova R, Zhang J, Storasta L, Syvajarvi M, Janzen E
263 - 266 Epitaxial growth of 4H-SiC with hexamethyldisilane HMDS
Sartel C, Souliere V, Dazord J, Monteil Y, El-Harrouni I, Bluet JM, Guillot G
267 - 270 Homoepitaxial growth of 4H-SiC on porous substrate using bis-trimethylsilmethane precursor
Jeong JK, Um MY, Na HJ, Kim BS, Song IB, Kim HJ
271 - 274 TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth
Sorokin LM, Hutchison JL, Sloan J, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
275 - 278 3C-SiC(100) homoepitaxial growth by chemical vapor deposition and Schottky barrier junction characteristics
Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S
279 - 282 Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy
Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S
283 - 286 Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
Yakimova R, Jacobson H, Syajarvi M, Kakanakova-Georgieva A, Iakimov T, Virojanadara C, Johansson LI, Janzen E
287 - 290 Effect of the Si droplet size on the VLS growth mechanism of SiC homoepitaxial layers
Ferro G, Chaussende D, Cauwet F, Monteil Y
291 - 294 Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts
Syrkin A, Dmitriev V, Kovalenkov O, Bauman D, Crofton J
295 - 298 Traveling self-confined-solvent method: Novel LPE growth of 6H-SiC
Asaoka Y, Hiramoto M, Sano N, Kaneko T
299 - 302 Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition
Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K
303 - 306 In situ etching of SiC wafers in a CVD system using oxygen as the source
Wang RJ, Bhat I, Chow TP
307 - 310 SiO2 as oxygen source for the chemical vapor transport of SiC
Jacquier C, Ferro G, Cauwet F, Monteil Y
311 - 314 Growth of defect-free 3C-SiC on 4H-and 6H-SiC mesas using step-free surface heteroepitaxy
Neudeck PG, Powell JA, Trunek AJ, Huang XRR, Dudley M
315 - 318 3C-SiC Growth on 6H-SiC (0001) substrates
Matko I, Chenevier B, Audier M, Madar R, Diani M, Simon L, Kubler L, Aubel D
319 - 322 Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates
Nagasawa H, Kawahara T, Yagi K
323 - 326 Comparative study of heteroepitaxially and homoepitaxially grown 3C-SiC films
Takahashi T, Ishida Y, Tsuchida H, Kamata I, Okumura H, Yoshida S, Arai K
327 - 330 Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers
Bakin A, Behrens I, Ivanov A, Peiner E, Piester D, Wehmann HH, Schlachetzki A
331 - 334 Selective epitaxial growth of pyramidal 3C-SiC on patterned Si substrate
Okui Y, Jacob C, Ohshima S, Nishino S
335 - 338 Evaluation of carbonized layers for 3C-SiC/Si epitaxial growth by ellipsometry
Shimizu H, Ohba T, Hisada K
339 - 342 In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY
343 - 346 Improved SiCOI structures elaborated by heteroepitaxy of 3C-SiC on SOI
Chassagne T, Ferro G, Wang H, Stoemenos Y, Peyre H, Contreras S, Camassel J, Monteil Y, Ghyselen B
347 - 350 Study of metamorphosing top Si layer of SOI wafer into 3C-SiC using conventional electric furnace
Hirai S, Jobe F, Nakao M, Izumi K
351 - 354 Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer
Nakazawa H, Suemitsu M
355 - 358 Electrical characterization of SiC/Si heterostructures with modified interfaces
Forster C, Masri P, Pezoldt J
359 - 362 Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon
Krafcsik OH, Vida G, Josepovits KV, Deak P, Radnoczi GZ, Pecz B, Barsony I
363 - 366 Reaction mechanism of the carbonization process by low-energy ion subplantation
Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y
367 - 370 Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD
Yasui K, Hashiba M, Narita Y, Akahane T
371 - 374 Fabrication of alpha-SiC heteroepitaxial films by YAG-PLAD method
Muto H, Kusumori T
375 - 378 Low-temperature preparation of alpha-SiC epitaxial films by Nd : YAG pulsed-laser deposition
Kusumori T, Muto H
379 - 382 Physics of heteroepitaxy and heterophases
Masri P, Pezoldt J, Sumiya M, Averous M
385 - 390 Growth-induced structural defects in SiCPVT boules
Skowronski M
391 - 394 Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography
Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA
395 - 398 Behavior of micropipes during growth in 4H-SiC
Vouroutzis N, Yakimova R, Syvajarvi M, Jacobson H, Stoemenos J, Janzen E
399 - 402 Reduced micropipe density in boule-derived 6H-SiC substrates via H etching of seed crystals
Saddow SE, Elkington T, Smith MCD
403 - 406 Stress distribution in 2in SiC wafer measured by photoelastic method
Sasaki M, Miyanagi Y, Nakayama K, Shiomi H, Nishino S
407 - 410 Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
411 - 414 Observation of 2in SiC wafer by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
415 - 418 Analysis of sub-surface damage-induced threading dislocations in physical vapor transport growth of 6H-SiC
Liu JQ, Sanchez EK, Skowronski M
419 - 422 Investigation of structural defects during 4H-SiC Schottky diode processing by synchrotron topography
Pernot E, Neyret E, Moulin C, Pernot-Rejmankova P, Templier F, Di Cioccio L, Billon T, Madar R
423 - 426 Structural defects in electrically degraded 4H-SiC PiN diodes
Persson POA, Jacobson H, Molina-Aldareguia JM, Bergman JP, Tuomi T, Clegg WJ, Janzen E, Hultman L
427 - 430 Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes
Stahlbush RE, Fedison JB, Arthur SD, Rowland LB, Kretchmer JW, Wang S
431 - 434 Optical emission microscopy of structural defects in 4H-SiC PiN diodes
Galeckas A, Linnros L, Breitholtz B
435 - 438 Structure of 2D-nucleation-induced stacking faults in 6H-SiC
Liu JQ, Sanchez EK, Skowronski M
439 - 442 Theoretical calculation of stacking fault energies in silicon carbide
Iwata H, Lindefelt U, Oberg S, Briddon PR
443 - 446 A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers
Ha S, Vetter WM, Dudley M, Skowronski M
447 - 450 Replication of defects from 4H-SiC wafer to epitaxial layer
Ohno T, Yamaguchi H, Kojima K, Nishio J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Yoshida S
451 - 454 4H-to 3C-SiC polytypic transformation during oxidation
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ
455 - 458 Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers
Skromme BJ, Palle K, Poweleit CD, Bryant LR, Vetter WM, Dudley M, Moore K, Gehoski T
459 - 462 Investigation of the relationship between defects and electrical properties of 3C-SiC epilayers
Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S
463 - 466 RHEED: A tool for structural investigations of thin polytypic SiC layers
Scharmann F, Pezoldt J
467 - 470 Electron-irradiation-induced amorphization of 6H-SiC by 300 keV transmission electron microscope equipped with a field-emission gun
Bae IT, Ishimaru M, Hirotsu Y
471 - 476 The nature and diffusion of intrinsic point defects in SiC
Bockstedte M, Heid M, Mattausch A, Pankratov O
477 - 480 Theoretical investigation of an intrinsic defect in SiC
Gali A, Deak P, Son NT, Janzen E
481 - 484 Carbon interstitials in SiC: A model for the D-II center
Mattausch A, Bockstedte M, Pankratov O
485 - 488 Chemical environment of atomic vacancies in electron irradiated silicon carbide measured by a 2D-Doppler broadening technique
Rempel AA, Blaurock K, Reichle KJ, Sprengel W, Schaefer HE
489 - 492 Radiation-induced defects in 4H-and 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy
Kawasuso A, Weidner M, Redmann F, Frank T, Krause-Rehberg R, Pensl G, Sperr P, Triftshauser W, Itoh H
493 - 496 Vacancy defects in as-polished and in high-fluence H(+)-implanted 6H-SiC detected by slow positron annihilation spectroscopy
Barthe MF, Desgardin P, Henry L, Corbel C, Britton DT, Kogel G, Sperr P, Triftshauser W, Vicente P, diCioccio L
497 - 500 EPR study of single silicon vacancy-related defects in 4H-and 6H-SiC
Mizuochi N, Isoya J, Yamasaki S, Takizawa H, Morishita N, Ohshima T, Itoh H
501 - 504 The neutral silicon vacancy in SiC: Ligand hyperfine interaction
Wagner M, Thinh NQ, Son NT, Baranov PG, Mokhov EN, Hallin C, Chen WM, Janzen E
505 - 508 Properties of the UD-1 deep-level center in 4H-SiC
Magnusson B, Ellison A, Janzen E
509 - 512 Electronic structure of the UD3 defect in 4H-and 6H-SiC
Wagner M, Magnusson B, Chen WM, Janzen E
513 - 516 Depth distribution of lattice damage-related D-I and D-II defects after ion implantation and annealing of 6H-SiC
Koshka Y, Melnychuck G
517 - 520 Electrical properties of neutron-irradiated silicon carbide
Kanazawa S, Okada M, Ishii J, Nozaki T, Shin K, Ishihara S, Kimura I
521 - 524 Radiation-induced defects in p-type silicon carbide
Kanazawa S, Okada M, Nozaki T, Shin K, Ishihara S, Kimura I
525 - 528 Hole and electron effective masses in 6H-SiC studied by optically detected cyclotron resonance
Son NT, Hallin C, Janzen E
529 - 532 Electronic localization around stacking faults in silicon carbide
Iwata H, Lindefelt U, Oberg S, Briddon PR
533 - 536 Theoretical study of cubic polytype inclusions in 4H-SiC
Iwata H, Lindefelt U, Oberg S, Briddon PR
537 - 540 Full-band Monte Carlo simulation of electron transport in 3C-SiC
Nilsson HE, Englund U, Hjelm M
541 - 544 Physical mechanism for the anomalous behavior of n-type dopants in SiC
Malhan RK, Kozima J, Yamamoto T, Fukumoto A
545 - 548 Influence of junction potential distribution on effective impurity ionization time constants in SiC for admittance spectroscopy data analysis
Los AV, Mazzola MS
549 - 552 Electrical activity of residual boron in silicon carbide
Storasta L, Bergman JP, Hallin C, Janzen E
553 - 556 Ab initio calculations of B diffusion in SiC
Rurali R, Hernandez E, Godignon P, Rebollo J, Ordejon P
557 - 560 Aluminum and boron diffusion into (1100) face SiC substrates
Soloviev SI, Gao Y, Khlebnikov Y, Khlebnikov II, Sudarshan TS
561 - 564 Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC
Aradi B, Gali A, Deak P, Son NT, Janzen E
565 - 568 Incorporation of hydrogen (H-1 and H-2) into 4H-SiC during epitaxial growth
Linnarsson MK, Forsberg U, Janson MS, Janzen E, Svensson BG
569 - 572 Hydrogen incorporation into SiC using plasma-hydrogenation
Koshka Y, Draper WA, Lakshman RY, Scofield J, Saddow SE
573 - 576 Polytype dependence of transition metal-related deep levels in 4H-, 6H-and 15R-SiC
Grillenberger J, Achtziger N, Pasold G, Witthuhn W
577 - 580 Theoretical studies of vanadium impurity in beta-SiC
Tairov YM, Reshanov SA, Parfenova II, Yuryeva EI, Ivanovskii AL
581 - 584 New and improved quantitative characterization of SiC using SIMS
Wang L, Sams DB, Wang A, Park BS
585 - 588 Experiment and theory of the anharmonic effect in C-H and C-D vibrations of SiC
Choyke WJ, Devaty RP, Bai S, Gali A, Deak P, Pensl G
589 - 592 Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor
Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T
593 - 596 Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
Henry A, Ellison A, Forsberg U, Magnusson B, Pozina G, Janzen E
597 - 600 Characterization of SiC epitaxial wafers by photoluminescence under deep UV excitation
Tajima M, Tanaka M, Hoshino N
601 - 604 UV scanning photoluminescence spectroscopy investigation of 6H-and 4H-SiC
Masarotto L, Bluet JM, Guillot G
605 - 608 Mapping of the luminescence decay of lightly-doped n-4H-SiC at room-temperature
Schneider K, Helbig R
609 - 612 Photoluminescence investigation of hydrogen interaction with defects in SiC
Koshka Y, Mazzola MS
613 - 616 Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
Ivanov IG, Zhang J, Storasta L, Janzen E
617 - 620 Characterization of 4H-SiC band-edge absorption properties by free-carrier absorption technique with a variable excitation spectrum
Grivickas P, Grivickas V, Galeckas A, Linnros J
621 - 624 Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier-transform infrared spectroscopy
Yaguchi H, Narita K, Hijikata Y, Yoshida S, Nakashima S, Oyanagi N
625 - 628 Experimental determination of the phonon-eigenvectors of silicon carbide by Raman spectroscopy
Herzog B, Rohmfeld S, Pusche R, Hundhausen M, Ley L, Semmelroth K, Pensl G
629 - 632 Sensitive detection of defects in alpha and beta SiC by Raman scattering
Nakashima S, Nakatake Y, Ishida Y, Takahashi T, Okumura H
633 - 636 Raman microprobe study of carrier density profiles in modulation-doped 6H SiC
Nakashima S, Nakatake Y, Yano Y, Harima H, Ohtani N, Katsuno M
637 - 640 A Raman study of metal-SiC interface reactions
Kurimoto E, Harima H, Toda T, Sawada M, Nakashima S, Iwami M
641 - 644 Ultrafast electron relaxation processes in SiC
Tomita T, Saito S, Suemoto T, Harima H, Nakashima S
647 - 650 Optical characterization of ion-implanted 4H-SiC
Feng ZC, Yan F, Chang WY, Zhao JH, Lin J
651 - 654 Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC
Nakamura SI, Kumagai H, Kimoto T, Matsunami H
655 - 658 Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy
Raineri V, Giannazzo F, Calcagno L, Musumeci P, Roccaforte F, La Via F
659 - 662 Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition
Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H
663 - 666 Carrier concentrations in implanted and epitaxial 4H-SiC by scanning spreading resistance microscopy
Osterman J, Anand S, Linnarsson M, Hallen A
667 - 670 Nanoscale electrical characterization of 3C-SiC layers by conductive atomic force microscopy
Yahata A, Zhang L, Shinohe T
671 - 674 Point-contact current voltage technique for depth profiling of dopants in silicon carbide
Fukuda Y, Nishikawa K, Shimizu M, Iwakuro H
675 - 678 Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates
Yamada T, Itoh KM
679 - 682 Influence of excited states of deep acceptors on hole concentrations in SiC
Matsuura H
683 - 686 p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical
Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK
687 - 690 Scanning acoustic microscopy in porous SiC
Ostapenko S, Smith MCD, Tarasov I, Wolan JT, Mynbaeva M, Goings J, McKeon JCP, Saddow SE
691 - 696 Atomic-scale passivation of silicon carbide surfaces
Soukiassian P
697 - 700 Adsorption of metastable molecular oxygen on SiC(0001)-root 3 x root 3
Virojanadara C, Johansson LI
701 - 704 Oxidation states present on SiC (0001) after oxygen exposure
Virojanadara C, Johansson LI
705 - 708 Adsorbate effects of the surface structure of 6H-SiC(0001) root 3 x root 3-R30 degrees
Aoyama T, Hisada Y, Mukainakano S, Ichimiya A
709 - 712 In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces
Jikimoto T, Tsuchida H, Kamata I, Izumi K
713 - 716 A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces
Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG
717 - 720 Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED
Sieber N, Seyller T, Graupner R, Ley L, Mikalo RP, Hoffmann P, Batchelor D, Schmeisser D
721 - 724 Photoemission electron imaging of transition metal (Ti, Ni) surfaces on Si and SiC
Labis J, Kamezawa C, Hirai M, Kusaka M, Iwami M
725 - 728 In situ RHEED analysis of the Ge-induced surface reconstructions on 6H-SiC(0001)
Weih P, Stauden T, Pezoldt J
729 - 732 Atomic-step observations on 6H-and 15R-SiC polished surfaces
Vicente P, Pernot E, Chaussende D, Camassel J
733 - 736 Optimization of interface and interphase systems: The case of SiC and III-V nitrides
Masri P, Pezoldt J, Sumiya M, Averous M
737 - 742 Towards quantum structures in SiC
Bechstedt F, Fissel A, Grossner U, Kaiser U, Weissker HC, Wesch W
743 - 746 Modification of SiC properties by insertion of Ge and Si nanocrystals -Description by ab initio supercell calculations
Weissker HC, Furthmuller J, Bechstedt F
747 - 750 Growth and characterization of three-dimensional SiC nanostructures on Si
Cimalla V, Zekentes K
751 - 754 Hole resonant tunneling through SiC/Si-dot/SiC heterostructures
Ikoma Y, Uchiyama K, Watanabe F, Motooka T
755 - 758 Development of a multilayer SiC surface micromachining process with capabilities and design rules comparable to conventional polysilicon surface micromachining
Song X, Rajgopal S, Melzak JM, Zorman CA, Mehregany M
759 - 762 Influence of deposition parameters and temperature on stress and strain of in situ doped PECVD silicon carbide
Pham HTM, de Boer CR, Pakula L, Sarro PM
763 - 766 Thermoelectric properties of 3C-SiC produced by silicon carbonization
Masuda M, Mabuchi H, Tsuda H, Matsui T, Morii K
767 - 770 The brittle-to-ductile transition in 4H-SiC
Zhang M, Hobgood HM, Demenet JL, Pirouz P
773 - 778 Annealing of implanted layers in (1(1)over-bar00) and (11(2)over-bar0) oriented SiC
Satoh M
779 - 782 Range distributions of implanted ions in silicon carbide
Janson MS, Linnarsson MK, Hallen A, Svensson BG
783 - 786 Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0)
Negoro Y, Miyamoto N, Kimoto T, Matsunami H
787 - 790 Electrical activation of implanted phosphorus ions in (0001)/(11(2)over-bar0)-oriented 4H-SiC
Schmid F, Laube M, Pensl G, Wagner G, Maier M
791 - 794 Codoping of 4H-SiC with N- and P-donors by ion implantation
Laube M, Schmid F, Pensl G, Wagner G
795 - 798 Improvements in electrical properties of n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing
Senzaki J, Harada S, Kosugi R, Suzuki S, Fukuda K, Arai K
799 - 802 Low-temperature activation of ion-implanted dopants in 4H-SiC by excimer laser annealing
Tanaka Y, Tanoue H, Arai K
803 - 806 Electrical characteristics of Al+ ion-implanted 4H-SiC
Tanaka H, Tanimoto S, Yamanaka M, Hoshi M
807 - 810 Micro-structural and electrical properties of Al-implanted & lamp-annealed 4H-SiC
Nakamura H, Watanabe H, Yamazaki J, Tanaka N, Malhan RK
811 - 814 Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC
Nipoti R, Carnera A, Raineri V
815 - 818 Damage evolution and recovery in Al-implanted 4H-SiC
Zhang Y, Weber WJ, Jiang W, Hallen A, Possnert G
819 - 822 Comparison of Al and Al/C Co-implants in 4H-SiC annealed with an AlN cap
Jones KA, Shah PB, Derenge MA, Ervin MH, Gerardi GJ, Freitas JA, Braga GCB, Vispute RD, Sharma RP, Holland OW
823 - 826 Influence of implantation temperature and dose rate on secondary defect formation in 4H-SiC
Ohno T, Amemiya K
827 - 830 A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects
Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G
831 - 834 Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum
Ohi A, Ohshima T, Yoshikawa M, Lee KK, Iwami M, Itoh H
835 - 838 Ion implantation - Tool for fabrication of advanced 4H-SiC devices
Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A
839 - 842 Annealing kinetics of implantation-induced amorphous layer in 6H-SiC (0001)
Nakamura T, Matsumoto S, Horibe T, Satoh M
843 - 846 Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11(2)over-bar0), (1(1)over-bar00), and (0001) oriented 6H-SiC
Eryu O, Matsuo D, Abe K, Nakashima K
847 - 850 Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS)
Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K
851 - 854 Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy
Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K
855 - 858 Enhanced dopant diffusion effects in 4H silicon carbide
Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM
859 - 862 Infrared investigation of implantation damage in 6H-SiC
Camassel J, Wang HY, Pernot J, Godignon P, Mestres N, Pascual J
863 - 866 Suppression of macrostep formation in 4H-SiC using a cap oxide layer
Bahng W, Kim NK, Kim SC, Song GH, Kim ED
867 - 869 Masking process for high-energy and high-temperature ion implantation
Ohyanagi T, Onose H, Watanabe A, Someya T, Ohno T, Amemiya K, Kobayashi Y
871 - 874 Laser crystallization mechanism of amorphous SiC thin films
Urban S, Falk F, Gorelik T, Kaiser U
875 - 878 Experimental and computer simulation studies of defects and ion-solid interactions in silicon carbide
Weber WJ, Gao F, Jiang WL, Devanathan R
879 - 884 Ohmic contact structure and fabrication process applicable to practical SiC devices
Tanimoto S, Kiritani N, Hoshi M, Okushi H
885 - 888 CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC
Nakatsuka O, Koide Y, Murakami M
889 - 892 NiSi2 ohmic contact to n-type 4H-SiC
Nakamura T, Satoh M
893 - 896 Electrical characterization of nickel silicide contacts on silicon carbide
Roccaforte F, La Via F, Raineri V, Musumeci P, Calcagno L
897 - 900 Effects of interfacial reactions on electrical properties of Ni ohmic contacts on n-type 4H-SiC
Han SY, Kim NK, Kim ED, Lee JL
901 - 904 Influence of rapid thermal annealing on Ni/6H-SiC contact formation
Agueev OA, Svetlichnyi AM, Razgonov RN
905 - 908 Effect of rapid thermal annealing conditions on parameters of Ni/21R-SiC contacts
Litvinov VL, Demakov KD, Agueev OA, Svetlichnyi AM, Konakova RV, Lytvyn PM, Milenin VV
909 - 912 Effects of surface treatments of 6H-SiC upon metal-SiC interfaces
Abe K, Sumitomo M, Sumi T, Eryu O, Nakashima K
913 - 916 Titanium-based ohmic contact on p-type 4H-SiC
Jung KH, Cho NI, Lee JH, Yang SJ, Kim CK, Lee BT, Rim KH, Kim NK, Kim ED
917 - 920 Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode
Kakanakov R, Kassamakova L, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K
921 - 924 Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission
Shigiltchoff O, Kimoto T, Hobgood D, Neudeck PG, Porter LM, Devaty RP, Choyke WJ
925 - 928 Electrical properties and interface reaction of annealed Cu/4H-SiC Schottky rectifiers
Hatayama T, Kawahito K, Kijima H, Uraoka Y, Fuyuki T
929 - 932 Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
Kassamakova L, Kakanakov R, Yakimova R, Kakanakova-Georgieva A, Syvajarvi M, Wilzen L, Janzen E
933 - 936 Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation
Kato M, Ichimura M, Arai E
937 - 940 Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
Lee SK, Zetterling CM, Ostling M, Aberg I, Magnusson MH, Deppert K, Wernersson LE, Samuelson L, Litwin A
941 - 944 Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide
Korolkov O, Rang T
945 - 948 Electrical properties of graphite/p-type homoepitaxial diamond contact
Chen YG, Hasegawa M, Yamanaka S, Okushi H, Kobayashi N
949 - 952 Reactive ion etching process of 4H-SiC using the CHF3/O-2 mixtures and a post-O-2 plasma-etching process
Kang SC, Shin MW
953 - 956 Electrical properties of 4H-SiC thin films reactively ion-etched in SF6/O-2 plasma
Kim BS, Jeong JK, Um MY, Na HJ, Song IB, Kim HJ
957 - 960 Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes
Song JG, Shin MW
961 - 966 Oxidation of silicon carbide: Problems and solutions
Afanas'ev VV, Bassler M, Pensl G, Stesmans A
967 - 972 Passivation of the 4H-SiC/SiO2 interface with nitric oxide
Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK, Weller RA, Pantelides ST, Holland OW, Das MK, Feldman LC
973 - 976 Passivation of the oxide/4H-SiC interface
Jamet P, Dimitrijev S, Tanner P
977 - 980 Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities
Lu CY, Cooper JA, Chung GY, Williams JR, McDonald K, Feldman LC
981 - 984 High-current, NO-annealed lateral 4H-SiC MOSFETs
Das MK, Chung GY, Williams JR, Saks NS, Lipkin LA, Palmour JW
985 - 988 N2O processing improves the 4H-SiC : SiO2 interface
Lipkin LA, Das MK, Palmour JW
989 - 992 Reduction of interface trap density in 4H-SiC MOS by high-temperature oxidation
Okuno E, Amano S
993 - 996 Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing
Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP
997 - 1000 Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment
Maeyama Y, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Shirafuji T
1001 - 1004 New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures
Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN
1005 - 1008 On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures
Olafsson HO, Allerstam F, Sveinbjornsson EO
1009 - 1012 Effects of successive annealing of oxides on electrical characteristics of silicon carbide metal-oxide-semiconductor structures
Yoshikawa M, Satoh M, Ohshima T, Itoh H
1013 - 1016 The investigation of 4H-SiC/SiO2 interfaces by optical and electrical measurements
Ishida Y, Takahashi T, Okumura H, Jikimoto T, Tsuchida H, Yoshikawa M, Tomioka Y, Midorikawa M, Hijikata Y, Yoshida S
1017 - 1020 Characteristics of mobile ions in the SiO2 films of SiC-MOS structures
Jang SJ, Song HJ, Oh KY, Lee KH, Lim YJ, Cho NI
1021 - 1024 Abnormal hysteresis property of SiC oxide C-V characteristics
Choi JS, Lee WS, Shin DH, Lee HG, Kim YS, Park KH
1025 - 1028 ESR characterization of SiC bulk crystals and SiO2/SiC interface
Isoya J, Kosugi R, Fukuda K, Yamasaki S
1029 - 1032 Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry
Tomioka Y, Iida T, Midorikawa M, Tukada H, Yoshimoto K, Hijikata Y, Yaguchi H, Yoshikawa M, Ishida Y, Kosugi R, Yoshida S
1033 - 1036 X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces
Hijikata Y, Yaguchi H, Yoshikawa M, Yoshida S
1037 - 1040 SIMS analyses of SiO2/4H-SiC(0001) interface
Yamashita K, Kitabatake M, Kusumoto P, Takahashi K, Uchida M, Miyanaga R, Itoh H, Yoshikawa M
1041 - 1044 Hall measurements of inversion and accumulation-mode 4H-SiC MOSFETs
Chatty K, Banerjee S, Chow TP, Gutmann RJ, Arnold E, Alok D
1045 - 1048 Correlation between inversion channel mobility and interface traps near the conduction band in SiC MOSFETs
Suzuki S, Harada S, Kosugi R, Senzaki J, Fukuda K
1049 - 1052 Influence of the wet re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs
Kosugi R, Okamoto M, Suzuki S, Senzaki J, Harada S, Fukuda K, Arai K
1053 - 1056 Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs
Kojima K, Ohno T, Suzuki S, Senzaki J, Harada S, Fukuda K, Kushibe M, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K
1057 - 1060 A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing
Fukuda K, Senzaki J, Kushibe M, Kojima K, Kosugi R, Suzuki S, Harada S, Suzuki T, Tanaka T, Arai K
1061 - 1064 Significant improvement of inversion channel mobility in 4H-SiC MOSFET on (11(2)over-bar0) face using hydrogen post-oxidation annealing
Senzaki J, Fukuda K, Kojima K, Harada S, Kosugi R, Suzuki S, Suzuki T, Arai K
1065 - 1068 4H-SiC MOSFETs on (03(3)over-bar8) face
Hirao T, Yano H, Kimoto T, Matsunami H, Shiomi H
1069 - 1072 Improved channel mobility in normally-off 4H-SiC MOSFETs with buried channel structure
Harada S, Suzuki S, Senzaki J, Kosugi R, Adachi K, Fukuda K, Arai K
1073 - 1076 4H-SiC ACCUFET with a two-layer stacked gate oxide
Kaneko S, Tanaka H, Shimoida Y, Kiritani N, Tanimoto S, Yamanaka M, Hoshi M
1077 - 1080 4H-SiC delta-doped accumulation-channel MOS FET
Yokogawa T, Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M
1081 - 1084 Channel engineering of buried-channel 4H-SiC MOSFET based on the mobility model of the oxide/4H-SiC interface
Hatakeyama T, Harada S, Suzuki S, Senzaki J, Kosugi R, Fukuda K, Shinohe T, Arai K
1085 - 1088 TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate
Adachi K, Johnson CM, Arai K, Fukuda K, Harada S, Shinohe T
1089 - 1092 Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs
Chatty K, Banerjee S, Chow TP, Gutmann RJ
1093 - 1096 Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide
Ohshima T, Lee KK, Ohi A, Yoshikawa M, Itoh H
1097 - 1100 Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions
Lee KK, Ohshima T, Itoh H
1101 - 1104 Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation
Okojie RS, Lukco D, Keys L, Tumakha S, Brillson LJ
1105 - 1108 Plasma oxidation of SiC at low temperatures (below 300 degrees C)
Satoh M, Shimada H, Nakamura T, Nagamoto N, Yanagihara S
1109 - 1112 Low-temperature thermal oxidation of ion-amorphized 6H-SiC
Nipoti R, Parisini A, Poggi A
1113 - 1116 Oxidation of porous 4H-SiC substrates
Soloviev S, Das T, Sudarshan TS
1119 - 1124 Advances in SiC materials and technology for Schottky diode applications
Di Cioccio L, Billon T
1125 - 1128 Comparison of 4H-SiC pn, pinch and Schottky diodes for the 3 kV range
Peters D, Friedrichs P, Schorner R, Stephani D
1129 - 1132 A JBS diode with controlled forward temperature coefficient and surge current capability
Dahlquist F, Lendenmann H, Ostling M
1133 - 1136 Impact of material defects on SiC Schottky barrier diodes
Morisette DT, Cooper JA
1137 - 1140 A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes
Kamata I, Tsuchida H, Jikimoto T, Izumi K
1141 - 1144 Analysis of high leakage currents in 4H-SiC Schottky barrier diodes using optical beam-induced current measurements
Tsuji T, Izumi S, Ueda A, Fujisawa H, Ueno K, Tsuchida H, Kamata I, Jikimoto T, Izumi K
1145 - 1148 4H-SiC Schottky diodes with high on/off current ratio
Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG
1149 - 1152 Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM
1153 - 1156 Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias
Felsl HP, Wachutka G
1157 - 1160 High-voltage pulse instabilities in SiC Schottky diodes with implanted resistive edge terminations
Morisette DT, Cooper JA
1161 - 1164 Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination
Templier F, Ferret P, Di Cioccio L, Collard E, Lhorte A, Billon T
1165 - 1168 Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H-SiC Schottky barrier diode
Ohtsuka K, Sugimoto H, Kinouchi S, Tarui Y, Imaizumi M, Takami T, Ozeki T
1169 - 1172 Reverse characteristics of a 4H-SiC Schottky barrier diode
Hatakeyama T, Shinohe T
1173 - 1176 Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
Syrkin A, Dmitriev V, Yakimova R, Henry A, Janzen E
1177 - 1180 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW
Alexandrov P, Wright B, Pan M, Weiner M, Fursin L, Zhao JH
1181 - 1184 Performance of SiC bipolar (PiN) and unipolar (SBD) power rectifiers in current-voltage-frequency parameter space
Morisette DT, Cooper JA
1185 - 1190 Application-oriented unipolar switching SiC devices
Friedrichs P, Mitlehner H, Schorner R, Dohnke KO, Elpelt R, Stephani D
1191 - 1194 High-performance UMOSFETs in 4H-SiC
Li Y, Cooper JA, Capano MA
1195 - 1198 Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC
Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J
1199 - 1202 5.0 kV 4H-SiC SEMOSFET with low RonS of 88 m Omega cm(2)
Sugawara Y, Asano K, Takayama D, Ryu S, Singh R, Palmour J, Hayashi T
1203 - 1206 Fabrication and initial characterization of 4H-SiC epilayer channel MOSFETs
Imaizumi M, Tarui Y, Sugimoto H, Ohtsuka K, Takami T, Ozeki T
1207 - 1210 Optimized P-well profile preventing punch-through for 4H-SiC power MOSFETs
Shimoida Y, Kaneko S, Tanaka H, Hoshi M
1211 - 1214 SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET)
Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R
1215 - 1218 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
Wahab Q, Kosugi H, Yano H, Hallin C, Kimoto T, Matsunami H
1219 - 1222 A 600 VSiC trench JFET
Gupta RN, Chang HR, Hanna E, Bui C
1223 - 1226 A novel high-voltage normally-off 4H-SiC vertical JFET
Zhao JH, Li X, Tone K, Alexandrov P, Pan M, Weiner M
1227 - 1230 2 kV 4H-SiC junction FETs
Onose H, Watanabe A, Someya T, Kobayashi Y
1231 - 1234 Design and processing of high-voltage 4H-SiC trench junction field-effect transistor
Zhu L, Chow TP
1235 - 1238 Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
Koo SM, Lee SK, Zetterling CM, Ostling M, Forsberg U, Janzen E
1239 - 1242 Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches
Mihaila A, Udrea F, Azar R, Brezeanu G, Amaratunga G
1243 - 1246 Simulation study of a novel current-limiting device: A vertical alpha-SiC JFET - Controlled current limiter
Tournier D, Godignon P, Planson D, Chante JP, Sarrus F
1247 - 1250 Realization of a high-current and low R-ON 600V current-limiting device
Nallet F, Godignon P, Planson D, Raynaud C, Chante JP
1251 - 1254 Super-junction device forward characteristics and switched power limitations
Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K
1255 - 1258 Silicon/oxide/silicon carbide (SiOSiC) - A new approach for high voltage, high frequencies integrated circuits
Udrea F, Mihaila A, Azar R
1259 - 1264 High-power SiC diodes: Characteristics, reliability and relation to material defects
Lendenmann H, Dahlquist F, Bergman JP, Bleichner H, Hallin C
1265 - 1268 High-temperature performance of 10 kilovolts, 200 amperes (pulsed) 4H-SiC PiN rectifiers
Singh R, Irvine KG, Richmond JT, Palmour JW
1269 - 1272 Study of SiC PiN diodes subjected to high current density pulses
Hillkirk LM, Bakowski M
1273 - 1276 High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation
Negoro Y, Miyamoto N, Kimoto T, Matsunami H
1277 - 1280 Measurement and device simulation of avalanche breakdown in high-voltage 4H-SiC diodes including the influence of macroscopic defects
Domeij M, Brunahl H, Ostling M
1281 - 1284 Microstructural characterization of recombination-induced stacking faults in high-voltage SiC diodes
Liu JQ, Skowronski M, Hallin C, Soderholm R, Lendenmann H
1285 - 1288 Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers
Zimmermann U, Osterman J, Zhang J, Henry A, Hallen A
1289 - 1292 Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization
Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP
1293 - 1296 Photon emission analysis of defect-free 4H-SiC pn diodes in avalanche regime
Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K
1297 - 1300 Electroluminescence analysis of Al+ and B+ implanted pn diodes
Fujisawa H, Tsuji T, Izumi S, Ueno K, Kamata I, Tsuchida T, Jikimoto T, Izumi K
1301 - 1304 An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors
Brezeanu G, Badila M, Godignon P, Millan J, Udrea F, Mihaila A, Amaratunga G
1305 - 1308 A novel technology for the formation of a very small bevel angle for edge termination
Yan F, Qin C, Zhao JH
1309 - 1312 The deep boron level in high-voltage PiN diodes
Aberg D, Hallen A, Osterman J, Zimmermann U, Svensson BG
1313 - 1316 Electrical characteristics of 4H-SiC pn diode grown by LPE method
Kuznetsov N, Bauman D, Gavrilin A, Kalinina EV
1317 - 1320 Highly-doped implanted pn junction for SiC Zener diode fabrication
Godignon P, Jorda X, Nipoti R, Cardinali G, Mestres N
1321 - 1324 Unipolar and bipolar SiC integral cascoded switches with MOS and junction gate - Simulation study
Bakowski M, Gustafsson U
1325 - 1328 All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A
Luo Y, Fursin L, Zhao JH, Alexandrov P, Wright B, Weiner M
1329 - 1332 Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC
Tang Y, Fedison JB, Chow TP
1333 - 1336 On the temperature coefficient of 4H-SiC npn transistor current gain
Li X, Luo Y, Zhao JH, Alexandrov P, Pan M, Weiner M
1337 - 1340 Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
Danielsson E, Zetterling CM, Ostling M, Forsberg U, Janzen E
1341 - 1343 Hybrid MOS-gated bipolar transistor using 4H-SiC BJT
Tang Y, Chow TP, Agarwal AK, Ryu SH, Palmour JW
1345 - 1348 A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC
Li X, Fursin L, Zhao JH, Alexandrov P, Pan M, Weiner M, Burke T, Khalil G
1349 - 1352 Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors
Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL
1353 - 1358 4H-SiC IMPATT diode fabrication and testing
Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA
1359 - 1362 Demonstration of IMPATT diode oscillators in 4H-SiC
Yuan L, Cooper JA, Webb KJ, Melloch MR
1363 - 1366 Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs
Sghaier N, Bluet JM, Souifi A, Guillot G, Morvan E, Brylinski C
1367 - 1370 Development and demonstration of high-power X-band SiC MESFETs
Chang HR, Hanna E, Hacker J, Hackett R, Bui C
1371 - 1374 Hot-carrier luminescence in 4H-SiC MESFETs
Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C
1375 - 1378 High-performance silicon carbide MESFET utilizing lateral epitaxy
Konstantinov AO, Harris CI, Ericsson P
1379 - 1382 Influence of gate finger width on RF characteristics of 4H-SiC MESFET
Arai M, Honda H, Ogata M, Sawazaki H, Ono S
1383 - 1386 Fabrication of 4H-SiC planar MESFETs having low contact resistance
Na HJ, Kim HJ, Adachi K, Kiritani N, Tanimoto S, Okushi H, Arai K
1387 - 1390 Surface control of 4H-SiC MESFETs
Hilton KP, Uren MJ, Hayes DG, Johnson HK, Wilding PJ
1391 - 1394 Characteristics of MESFETs made by ion-implantation in bulk semi-insulating 4H-SiC
Mitra S, Tucker JB, Rao MV, Papanicolaou N, Jones KA
1395 - 1398 Evaluation of SiC MESFET structures using large-signal time-domain simulations
Jonsson R, Eriksson J, Wahab Q, Rudner S, Rorsman N, Zirath H, Svensson C
1399 - 1402 4H-SiC MESFET large-signal modeling using modified Materka model
Lee S, Song NJ, Burm J, An C
1403 - 1406 Compatibility of VJFET technology with MESFET fabrication and its interest for system integration: Fabrication of 6H and 4H-SiC 110 V lateral MESFET
Tournier D, Godignon P, Montserrat J, Planson D, Chante JP, Sarrus F
1407 - 1410 The development of ultra-high frequency power 6H-SiC vertical static induction transistor with p-n junction as a gate
Sankin VI, Shkrebiy PP, Kuznetsov AN, Savkina NA
1411 - 1414 Silicon carbide microwave limiters
Syrkin A, Dmitriev V, Lapidus A
1415 - 1418 MISiCFET chemical gas sensors for high temperature and corrosive environment applications
Spetz AL, Uneus L, Svenningstorp H, Wingbrant H, Harris CI, Salomonsson P, Tengstrom P, Martensson P, Ljung P, Mattsson M, Visser JH, Ejakov SG, Kubinski D, Ekedahl LG, Lundstrom I, Savage SM
1419 - 1422 The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL
1423 - 1426 Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
Nakagomi S, Shinobu H, Uneus L, Lundstrom I, Ekedahl LG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Spetz AL
1427 - 1430 A new type of SiC gas sensor with a pn-junction structure
Nakashima K, Okuyama Y, Ando S, Eryu O, Abe K, Yokoi H, Oshima T
1431 - 1434 Demonstration of 4H-SiC avalanche photodiode linear array
Yan F, Qin C, Zhao JH, Bush M, Olsen GH
1435 - 1438 4H-SiC material for Hall effect and high-temperature sensors working in harsh environments
Robert JL, Contreras S, Camassel J, Pernot J, Juillaguet S, Di Cioccio L, Billon T
1439 - 1442 N and p type 6H-SiC films for the creation diode and triode structure of nuclear particle detectors
Ivanov AM, Strokan NB, Lebedev AA, Davydov DV, Savkina NS, Bogdanova EV
1445 - 1448 Sublimation growth of bulk AlN crystals: Materials compatibility and crystal quality
Epelbaum BM, Hofmann D, Bickermann M, Winnacker A
1449 - 1452 Crystal growth of aluminum nitride by sublimation close space technique
Furusho T, Ohshima S, Nishino S
1453 - 1456 Aluminium nitride bulk crystals by sublimation method: Growth and X-ray characterization
Dorozhkin SI, Lebedev AO, Maximov AY, Tairov YM
1457 - 1460 Heteroepitaxial growth of insulating AlN on 6H-SiC by MBE
Onojima N, Suda J, Matsunami H
1461 - 1464 RHEED studies of in effect on the N-polarity GaN surface kinetics modulation in plasma-assisted molecular-beam epitaxy
Shen XQ, Ide T, Shimizu M, Okumura H
1465 - 1468 Surface morphology of GaN epilayer with SixN1-x buffer layer grown by ammonia-source MBE
Shimizu M, Ohkita H, Suzuki A, Okumura H
1469 - 1472 Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
Kakanakova-Georgieva A, Forsberg U, Magnusson B, Yakimova R, Janzen E
1473 - 1476 GaN grown by hydride-metal organic vapor phase epitaxy (H-MOVPE) on lattice-matched oxide and silicon substrates
Mastro M, Kryliouk OM, Dann T, Anderson TJ, Nikolaev AE, Melnik YV, Dmitriev VA
1477 - 1480 Growth and characterization of GaGdN and AlGdN on SiC by RF-MBE
Teraguchi N, Suzuki A, Nanishi Y
1481 - 1484 Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
Tungasmita S, Persson POA, Seppanen T, Hultman L, Birch J
1485 - 1488 Silicon carbide buffer layers for nitride growth on Si
Masri P, Herro Z, Stauden T, Pezoldt J, Sumiya M, Averous M
1489 - 1492 Crystallographic growth models of wurtzite-type thin films on 6H-SiC
Ohsato H, Wada K, Kato T, Sun CJ, Razeghi M
1493 - 1496 Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
Bergman JP, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
1497 - 1500 Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures
Lu CR, Lee JR, Chen YY, Lee WI, Lee SC
1501 - 1504 Raman scattering from wurtzite GaN bulk crystal
Verma P, Yamada A
1505 - 1510 Recent progress of AlGaN/GaN heterojunction FETs for microwave power applications
Miyamoto H
1511 - 1514 High performance AlGaN/GaN HEMTs with recessed gate
Sano Y, Mita J, Yamada T, Makita T, Kaifu K, Ishikawa H, Egawa T, Jimbo T
1515 - 1518 Broadband push-pull microwave power amplifier using AlGaN/GaN HEMTs on SiC
Lee JW, Webb KJ
1519 - 1522 Temperature dependence of DC characteristics in AlN/GaN metal insulator semiconductor field effect transistor
Ide T, Shimizu M, Suzuki A, Shen XQ, Okumura H, Nemoto T
1523 - 1526 Thermal analysis of GaN-based HFET devices using the unit thermal profile approach
Park J, Lee CC, Kim JW, Lee JS, Lee WS, Shin JH, Shin MW
1527 - 1530 AlGaN/GaN hetero field-effect transistor for a large current operation
Yoshida S, Ishii H, Li J
1531 - 1534 Gallium nitride power device design tradeoffs
Matocha K, Chow TP, Gutmann RJ
1535 - 1538 Gallium nitride metal-insulator-semiconductor capacitors using low-pressure chemical vapor deposited oxides
Matocha K, Chow TP, Gutmann RJ