Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.15, No.4 Entire volume, number list
ISSN: 1071-1023 (Print) 

In this Issue (156 articles)

763 - 779 Microstructure Control in Semiconductor Metallization
Harper JM, Rodbell KP
780 - 784 Dual Unit Scanning Tunneling Microscope Atomic-Force Microscope for Length Measurement Based on Reference Scales
Zhang HJ, Huang F, Higuchi T
785 - 787 Magnetic Nanostructures Fabricated by Scanning Tunneling Microscope-Assisted Chemical-Vapor-Deposition
Pai WW, Zhang JD, Wendelken JF, Warmack RJ
788 - 792 Force Modulation Atomic-Force Microscopy Recording for Ultrahigh Density Recording
Hosaka S, Koyanagi H, Kikukawa A, Miyamoto M, Nakamura K, Etoh K
793 - 799 Nanofabrication of Electrodes with Sub-5 nm Spacing for Transport Experiments on Single Molecules and Metal-Clusters
Bezryadin A, Dekker C
800 - 804 Deconvolution of Tip Affected Atomic-Force Microscope Images and Comparison to Rutherford Backscattering Spectrometry
Tabet MF, Urban FK
805 - 808 Effect of Substrate-Temperature and Annealing on the Structural-Properties of ZnO Ultrafine Particle Films
Zhao DC, Qu ZK, Pan XR, Dai MJ, Sun MG
809 - 813 Ion-Implanted Nanostructures on Ge(111) Surfaces Observed by Atomic-Force Microscopy
Chen YJ, Wilson IH, Cheung WY, Xu JB, Wong SP
814 - 817 Nanometer Table-Top Proximity X-Ray-Lithography with Liquid-Target Laser-Plasma Source
Malmqvist L, Bogdanov AL, Montelius L, Hertz HM
818 - 822 Low-Energy Focused-Ion-Beam Exposure Characteristics of an Amorphous Se75Ge25 Resist
Lee HY, Chung HB
823 - 827 Novel Effects in Inorganic As50Se50 Photoresists and Their Application in Microoptics
Lyubin V, Klebanov M, Bar I, Rosenwaks S, Eisenberg NP, Manevich M
828 - 832 Imaging Characteristics of Poly(Methyl Methacrylate) at Vacuum-Ultraviolet Wavelengths
Ferincz IE, Toth C, Young JF
833 - 839 Design Optimization for 2 Lens Focused Ion-Beam Columns
Wang L
840 - 844 Field-Emission from Amorphous Diamond-Coated Mo Tip Emitters by Pulsed-Laser Deposition
Ding MQ, Myers AF, Choi WB, Vispute RD, Camphausen SM, Narayan J, Cuomo JJ, Hren JJ, Bruley J
845 - 848 Oxygen Implantation-Induced Interdiffusion in AlGaAs/GaAs Quantum-Well Structures
Hughes PJ, Weiss BL, Tlali S, Jackson HE
849 - 853 Observation of Hot-Electron Relaxation in GaAs/AlGaAs Multiple-Quantum Wells by Excitation Spectroscopy
Wu HZ, Liu JH, Dong GO, Wu JZ, Ye ZZ, Jiang XB
854 - 861 Base Metallization Stability in InP/InGaAs Heterojunction Bipolar-Transistors and Its Influence on Leakage Currents
Caffin D, Besombes C, Bresse JF, Legay P, Leroux G, Patriarche G, Launay P
862 - 869 Structural and Optical Characterizations of Single 3-Dimensionally Confined GaAs/AlAs Structures Grown on Patterned GaAs(001) Substrates
Kasai J, Tanaka S, Higuchi K, Katayama Y
870 - 875 Electrical-Transport Properties of Silicon Delta-Doped Al0.30Ga0.70As Samples Showing Suppression of the DX Center Features
Correa JA, Deoliveira AG, Dasilva MI, Ribeiro GM, Sampaio JF
876 - 879 X-Ray Photoelectron-Spectroscopy Study of GaAs(110) Cleaved in Alcoholic Sulfide Solutions
Bessolov VN, Konenkova EV, Lebedev MV
880 - 885 Effects of Water-Vapor and Chlorine on the Epitaxial-Growth of Si1-xGex Films by Chemical-Vapor-Deposition - Thermodynamic Analysis
Lee IM, Jansons A, Takoudis CG
886 - 890 Integration Issues for 850 nm Optical Modulators on Si Electronics by Direct Epitaxy
Cunningham JE, Jan WY
891 - 898 Interfacial Reaction Behavior of Pt, Pd, and Ni on ZnSe
Duxstad KJ, Haller EE, Yu KM, Bourret ED, Lin XW, Ruvimov S, Lilientalweber Z, Washburn J
899 - 902 Ultrathin Cobalt Silicide Layers Formed by Rapid Thermal-Processing of Metal on Amorphous-Silicon
Kamal AH, Rack MJ, Kozicki MN, Ferry DK, Lutzen J, Hallmark JA
903 - 907 Electrical Characterization of Iridium Schottky Contacts to Silicon - Early Stages of Silicidation
Jimenezleube FJ, Clement M, Maudes JS, Rodriguez T
908 - 915 Linewidth Dependence of Stress-Relaxation and Microstructural Change in Passivated Al(Cu) Lines
Yeo IS, Ho PS, Anderson SG, Kawasaki H
916 - 920 Probeless Voltage Contrast Using a Focused Ion-Beam for Opens and Shorts Defect Isolation of Ultralarge Scale Integration Technologies
Giewont KJ, Hunt DB, Hummler KM
921 - 927 Surface-Roughness of Nitrided (0001)Al2O3 and AlN Epilayers Grown on (0001)Al2O3 by Reactive Molecular-Beam Epitaxy
Kim W, Yeadon M, Botchkarev AE, Mohammad SN, Gibson JM, Morkoc H
928 - 934 Influences of the ((Ba,Sr)TiO3)-Modified RuO2 Interface on the Dielectric-Constant and Current-Voltage Characteristics
Jeon MS, Choi DK
935 - 941 Equipment Simulation of SiGe Heteroepitaxy - Model Validation by Ab-Initio Calculations of Surface-Diffusion Processes
Hierlemann M, Werner C, Spitzer A
942 - 947 Physical and Electrical-Properties in Metal-Oxide-Si Capacitors with Various Gate Electrodes and Gate Oxides
Changliao KS, Chen LC
948 - 954 Gas-Phase and Surface-Reactions in Subatmospheric Chemical-Vapor-Deposition of Tetraethylorthosilicate-Ozone
Gill WN, Ganguli S
955 - 960 Testing of a Rapid Fault-Detection Model for Quality-Control - Borophosphosilicate Glass Thin-Films Monitored by Infrared-Absorption Spectroscopy
Zhang S, Franke JE, Niemczyk TM, Haaland DM, Cox JN, Banerjee I
961 - 966 Highly Preferred (111) Texture Aluminum-Copper Films Formed with Argon Plasma Treatment of the Titanium Underlayer and Their Electromigration Endurance as Interconnects
Kamoshida K, Ito Y
967 - 970 Surface Nitridation of Silicon Dioxide with a High-Density Nitrogen Plasma
Kraft R, Schneider TP, Dostalik WW, Hattangady S
971 - 982 Ar, N-2 and Cl-2 Electron-Cyclotron-Resonance Plasmas Measured by Time-of-Flight Analysis - Neutral Kinetic Energies and Source Gas Cracking
Goodman RS, Materer N, Leone SR
983 - 989 Dry Etch Damage in GaAs Metal-Semiconductor Field-Effect Transistors Exposed to Inductively-Coupled Plasma and Electron-Cyclotron-Resonance Ar Plasmas
Ren F, Lee JW, Abernathy CR, Pearton SJ, Constantine C, Barratt C, Shul RJ
990 - 992 Dry-Etching of Germanium in Magnetron Enhanced SF6 Plasmas
Mclane GF, Dubey M, Wood MC, Lynch KE
993 - 999 Spatial Variation of the Etch Rate for Deep-Etching of Silicon by Reactive Ion Etching
Andersen BA, Hansen O, Kristensen M
1000 - 1007 Efficiency Evaluation of Postetch Metal Stack Anticorrosion Treatments Using Chemical-Analyses by X-Ray Photoelectron-Spectroscopy and Wide Dispersive-X-Ray Fluorescence
Czuprynski P, Joubert O, Heitzmann M, Louis D, Vizioz C, Lajoinie E
1008 - 1010 Isolation of a Lattice-Mismatched Alinas/GaInAs Layer on InP Using Ion-Implantation for High-Energy Mobility Transistor Realization
Fourre H, Pesant JC, Schuler O, Cappy A
1011 - 1014 Quantitative Measurement of 2-Dimensional Dopant Profile by Cross-Sectional Scanning Capacitance Microscopy
Mcmurray JS, Kim J, Williams CC
1018 - 1018 Microelectronics and Nanometer Structures - Processing, Measurement and Phenomena - Papers from the 24th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Aspnes DE, Rowe JE
1019 - 1026 Atomic Wires and Their Electronic-Properties
Yamada T
1027 - 1033 Morphological and Compositional Variations in Strain-Compensated InGaAsP/InGaP Superlattices
Goldman RS, Feenstra RM, Silfvenius C, Stalnacke B, Landgren G
1034 - 1039 Spatial Variations in Luminescence and Carrier Relaxation in Molecular-Beam Epitaxial Grown (InP)(2)/(Gap)(2) Quantum Wires
Tang Y, Rich DH, Moy AM, Cheng KY
1040 - 1044 Optical-Properties of Semiconductor Nanostructures
Reinecke TL, Knipp PA, Walck SN
1045 - 1050 Electronic-Structure and Optical Behavior of Self-Assembled InAs Quantum Dots
Berryman KW, Lyon SA, Segev M
1051 - 1055 Surface-Morphology and Quantum-Dot Self-Assembly in Growth of Strained-Layer Semiconducting-Films
Khor KE, Dassarma S
1056 - 1058 Morphological Stability of Strained-Layer Semiconductors
Wessels BW
1059 - 1064 2nd-Harmonic Spectroscopy of Si(001) Surfaces - Sensitivity to Surface Hydrogen and Doping, and Applications to Kinetic Measurements
Xu Z, Hu XF, Lim D, Ekerdt JG, Downer MC
1065 - 1073 On the Mechanism of the Hydrogen-Induced Exfoliation of Silicon
Weldon MK, Marsico VE, Chabal YJ, Agarwal A, Eaglesham DJ, Sapjeta J, Brown WL, Jacobson DC, Caudano Y, Christman SB, Chaban EE
1074 - 1079 Minimization of Suboxide Transition Regions at Si-SiO2 Interfaces by 900 Degrees-C Rapid Thermal Annealing
Lucovsky G, Banerjee A, Hinds B, Claflin B, Koh K, Yang H
1080 - 1088 Investigation of Existing Defects and Defect Generation in Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Wen HJ, Ludeke R
1089 - 1096 Macroscopic and Microscopic Studies of Electrical-Properties of Very Thin Silicon Dioxide Subject to Electrical Stress
Daniel ES, Jones JT, Marsh OJ, Mcgill TC
1097 - 1104 Plasma-Assisted Formation of Low Defect Density SiC-SiO2 Interfaces
Golz A, Lucovsky G, Koh K, Wolfe D, Niimi H, Kurz H
1105 - 1107 Raman-Spectra as a Measure of Interface Alloying for IV/IV Superlattices
Zi JA, Zhang KM, Xie XD
1108 - 1111 Measurement of Band Offsets in Si/Si1-xGex and Si/Si1-X-Ygexcy Heterojunctions
Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Bair AE, Mayer JW, Ahn CC
1112 - 1116 Interfaces of Strained-Layer (Gensim)(P) Superlattices Studied by 2nd-Harmonic Generation
Xiao XD, Zhang C, Fedotov AB, Chen ZH, Loy MM
1117 - 1120 2-Dimensional Electron-Gas in Algan/GaN Heterostructures
Li JZ, Lin JY, Jiang HX, Khan MA, Chen Q
1121 - 1127 Microstructure, Vibrational and Electronic-Properties of GaN Grown by Molecular-Beam Epitaxy on Al2O3(0001) and 6H-SiC(0001)
Freundt D, Holz D, Luth H, Romani M, Rizzi A, Gerthsen D
1128 - 1132 Raman Monitoring of Molecular-Beam Epitaxial-Growth of GaN on GaAs(100) and Si(111)
Drews D, Schneider A, Zahn DR
1133 - 1138 Nitridation of the GaAs(001) Surface Using Atomic Nitrogen
Hill P, Westwood DI, Haworth L, Lu J, Macdonald JE
1139 - 1143 Optical-Transitions in Ingan/Algan Single Quantum-Wells
Zeng KC, Smith M, Lin JY, Jiang HX, Robert JC, Piner EL, Mcintosh FG, Zavada J
1144 - 1147 Theory of Interfaces and Surfaces in Wide-Gap Nitrides
Nardelli MB, Rapcewicz K, Bernholc J
1148 - 1152 Growth and Characterization of Light-Emitting ZnS/GaN Heterostructures
Piquette EC, Bandic ZZ, Mccaldin JO, Mcgill TC
1153 - 1158 Controlled Formation of Organic Layers on Semiconductor Surfaces
Hovis JS, Lee S, Liu HB, Hamers RJ
1159 - 1162 Gallium Desorption Behavior at AlGaAs/GaAs Heterointerfaces During High-Temperature Molecular-Beam Epitaxy
Mahalingam K, Dorsey DL, Evans KR, Venkat R
1163 - 1172 Kink Defects and Fermi-Level Pinning on (2X4) Reconstructed Molecular-Beam Epitaxially Grown Surfaces of GaAs and InP Studied by Ultrahigh-Vacuum Scanning-Tunneling-Microscopy and X-Ray Photoelectron-Spectroscopy
Ishikawa Y, Fukui T, Hasegawa H
1173 - 1181 Comparison of Si and GaAs/Interfaces Resulting from Thermal and Plasma Oxidation
Lefebvre PR, Irene EA
1182 - 1186 Wet Oxidation of AlAs Films Under Ultrahigh-Vacuum Conditions
Mitchell WJ, Chung CH, Yi SI, Hu EL
1187 - 1190 Characterization of Low-Temperature-Grown AlSb and GaSb Buffer Layers
Eyink KG, Seaford ML, Haas TW, Tomich DH, Lampert WV, Walck SD, Solomon JS, Mitchel WC, Eastman LF
1191 - 1195 Scanning-Tunneling-Microscopy and Ballistic-Electron-Emission Spectroscopy Studies of Molecular-Beam Epitaxially Grown Pt/CaF2/Si(111) Structures
Labella VP, Schowalter LJ, Ventrice CA
1196 - 1200 Evidence of Near-Surface Localization of Excited Electronic States in Crystalline Si
Mantese L, Bell KA, Rossow U, Aspnes DE
1201 - 1204 Microwave Modulated Photoluminescence as a Contactless Probe of Interface States
Inglefield CE, Delong MC, Taylor PC, Geisz JF, Olson JM
1205 - 1211 Surface and Interface Effects on Ellipsometric Spectra of Crystalline Si
Bell KA, Mantese L, Rossow U, Aspnes DE
1212 - 1220 Reflectance-Difference Studies of Interface-Formation and Initial-Growth Processes in ZnSe/GaAs(001) Heteroepitaxy
Yasuda T, Kimura K, Miwa S, Kuo LH, Ohtake A, Jin CG, Tanaka K
1221 - 1226 Explanation of the Linear Correlation Between Barrier Heights and Ideality Factors of Real Metal-Semiconductor Contacts by Laterally Nonuniform Schottky Barriers
Schmitsdorf RF, Kampen TU, Monch W
1227 - 1235 Evolution Mechanism of Nearly Pinning-Free Platinum/N-Type Indium-Phosphide Interface with a High Schottky-Barrier Height by in-Situ Electrochemical Process
Hasegawa H, Sato T, Hashizume T
1236 - 1240 Comparison of Electron-Affinity and Schottky-Barrier Height of Zirconium and Copper-Diamond Interfaces
Baumann PK, Nemanich RJ
1241 - 1253 Nature and Origins of Stacking-Faults from a ZnSe/GaAs Interface
Kuo LH, Kimura K, Ohtake A, Miwa S, Yasuda T, Yao T
1254 - 1259 Growth Mode and Defect Generation in ZnSe Heteroepitaxy on Te-Terminated GaAs(001) Surfaces
Ohtake A, Kuo LH, Yasuda T, Kimura K, Miwa S, Yao T, Nakajima K, Kimura K
1260 - 1264 In-Situ Photoemission and Reflectance Anisotropy Spectroscopy Studies of CdS Grown on InP(001)
Schultz C, Frisch AM, Hinrichs K, Kinsky J, Herrmann T, Rossow U, Esser N, Richter W
1265 - 1269 Effect of Growth-Conditions on Surface Roughening of Relaxed InGaAs on GaAs
Pinnington T, Lavoie C, Tiedje T
1270 - 1273 In-Rich 4X2 Reconstruction in Novel Planar Growth of InAs on GaAs(001)
Xue QK, Hasegawa Y, Ogino T, Kiyama H, Sakurai T
1274 - 1278 Subnanometer Analysis of Molecular-Beam Epitaxy-Grown Ternary Arsenides
Seaford ML, Wu W, Eyink KG, Tomich DH, Tucker JR, Eastman LF
1279 - 1285 Local Interface Composition and Extended Defect Density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) Heterojunctions
Heun S, Paggel JJ, Sorba L, Rubini S, Franciosi A, Bonard JM, Ganiere JD
1294 - 1294 Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena - Papers from the 4th International-Conference on Nanometer-Scale Science and Technology - Preface
Pang SJ
1295 - 1299 Growth and Characterization of Si and Ge Clusters on Ordered C-60 Overlayers
Klyachko D, Chen DM
1300 - 1303 Interaction of C-60 with the (3X3) and (Root-3X-Root-3) Surfaces of 6H-SiC(0001) - Adsorption, Decomposition, and SiC Growth
Li L, Hasegawa Y, Shinohara H, Sakurai T
1304 - 1306 Novel C-60-Ddme Complex Thin-Film with Electrical Bistable Properties
Ouyang M, Xue ZQ, Wang KZ, Wu QD, Qiang D
1307 - 1309 Si-and C-Rich Structure of the 6H-SiC(0001) Surface
Li L, Hasegawa Y, Sakurai T
1310 - 1312 Adsorption Geometries of 1,9-Decadiene on Si(111) 7X7 Studied by Scanning-Tunneling-Microscopy
Shachal D, Manassen Y
1313 - 1316 Study on Surface and Interface Structures of Nanocrystalline Silicon by Scanning-Tunneling-Microscopy
Gao JN, Yang HQ, Liu N, Shi DX, Jiang YS, Xue ZQ, Pang SJ, He YL
1317 - 1324 Diffusional Attractions Between Voids on a Si(111)7X7 Surface
Terovanesyan E, Manassen Y, Rao NR, Olami Z
1325 - 1329 Liquid-Phase Adsorption Process of Beta-Picoline on Stilbite (010) Observed by Atomic-Force Microscopy
Komiyama M, Gu MM
1330 - 1334 Magnetic Nanostructures Studied by Scanning Probe Microscopy and Spectroscopy
Wiesendanger R, Bode M, Kleiber M, Lohndorf M, Pascal R, Wadas A, Weiss D
1335 - 1337 Magnetotransport Through Mesoscopic Antidot Arrays
1338 - 1342 Magnetic Property of NiO Ultrafine Particles with a Small Ni Core
Sako S, Ohshima K, Sakai M, Bandow S
1343 - 1346 Magnetic Force Microscope Images of Magnetic Domains in Magnetic Garnet
Tian F, Wang C, Shang GY, Wang NX, Bai CL
1347 - 1349 Field-Induced Antiferromagnetic Ordering in Nis Cluster Confined in Zeolite-Y
Ding WP, Zhong W, Zhang N, Guo ZB, Gu G, Du YW
1350 - 1352 Study of the Complex of the Schiff-Base Polymer with Sulfate Iron by Magnetic Force Microscopy
Tian F, Wang C, Bai CL, Li WG, Wan MX
1353 - 1358 Imaging, Polymerization, and Reconstruction of Polystyrene Films with a Scanning Tunneling Microscope
Hua ZY, Xu W
1359 - 1363 Application of the Scanning Force Microscope in Structuring and in Temperature-Dependent Analysis of Au Nanostructures
Gobel H, Jacobs L, Vonblanckenhagen P
1364 - 1368 Scanning-Tunneling-Microscopy Modification of Ag Thin-Films on Si(100) - Local Rearrangement of the Si Substrate by Ag/Si Eutectic Phase-Formation
Memmert U, Hodel U, Hartmann U
1369 - 1372 Novel Lithography and Signal-Processing with Water-Vapor Ions
Koops HW, Dobisz E, Urban J
1373 - 1377 Fabrication of Surface Nanostructures by Scanning Tunneling Microscope Induced Decomposition of SiH4 and Sih2Cl2
Rauscher H, Behrendt F, Behm RJ
1378 - 1381 Studies of Field Related Effects in the Fabrication Process on Graphite Using a Scanning Tunneling Microscope
Wang C, Li XD, Shang GY, Qiu XH, Bai CL
1382 - 1384 Nanostructuring by Reactive Accelerated Cluster Erosion
Gruber A, Gspann J, Vonblanckenhagen P
1385 - 1387 Molecular-Patterns by Manipulating DNA-Molecules
Ouyang ZQ, Hu J, Chen SF, Sun JL, Li MQ
1388 - 1393 Observation of Modification and Recovery of Local Properties of Polyethylene Oxide
Nie HY, Motomatsu M, Mizutani W, Tokumoto H
1394 - 1397 Scanning Probe Nanofabrication of Chemically Active Areas on Substrate Covered with Organosilane Monolayers
Sugimura H, Nakagiri N
1398 - 1401 Fabrication of Hybrid Superconductor-Semiconductor Nanostructures by Integrated Ultraviolet Atomic-Force Microscope Lithography
Pingue P, Lazzarino M, Beltram F, Cecconi C, Baschieri P, Frediani C, Ascoli C
1402 - 1405 Metal-Based Single-Electron Transistors
Chen W, Ahmed H
1406 - 1410 Electron-Beam Dot Lithography for Nanometer-Scale Tunnel-Junctions Using a Double-Layered Inorganic Resist
Haraichi S, Wada T, Gorwadkar SM, Ishii K, Hiroshima H
1411 - 1413 Negative Differential Resistance on Single-Electron Transport in a Junction Array of Ultrasmall Islands
Nakashima H, Uozumi K
1414 - 1418 Patterning of Langmuir-Blodgett-Film with Ultrahigh Vacuum-Scanning Tunneling Microscope Atomic-Force Microscope
Hamanaka H, Ono T, Esashi M
1419 - 1424 Molecular-Organization of Azobenzene Derivatives at the Liquid/Graphite Interface Observed with Scanning-Tunneling-Microscopy
Grim PC, Vanoppen P, Rucker M, Defeyter S, Valiyaveettil S, Moessner G, Mullen K, Deschryver FC
1425 - 1428 Formation of Nanocolumn Self-Assembly by Solvent Polarity Control
Chai XD, Yang WS, Cao YW, Jiang YS, Lu R, Li TJ, He HX, Wang YQ, Liu ZF
1429 - 1431 Writing and Reading Bit Arrays for Information-Storage Using Conductance Change of a Langmuir-Blodgett-Film Induced by Scanning-Tunneling-Microscopy
Takimoto K, Kuroda R, Shido S, Yasuda S, Matsuda H, Eguchi K, Nakagiri T
1432 - 1436 Semiconducting, Gas-Sensing Properties of Europium Bisphthalocyanine Langmuir-Blodgett Thin-Films
Liang BJ, Yuan CW, Wei Y
1437 - 1441 Formation of Si Nanowire by Atomic Manipulation with a High-Temperature Scanning Tunneling Microscope
Hasunuma R, Komeda T, Mukaida H, Tokumoto H
1442 - 1444 Study on Photoelectric Properties of a TiO2 Nanoparticle
Chen YM, Cao Y, Bai YB, Yang WS, Yang JH, Jin HY, Li TJ
1445 - 1448 Formation of Nanocrystals in A-Si Thin-Films Induced by Pulsed-Laser Ultraviolet-Irradiation
Chvoj Z, Chab V, Borusik O
1449 - 1451 Atomic-Force Microscopy Investigations on the Surface Topographies of Aluminum-Based Composite Containing Nanocluster Diamond
Ouyang Q, Wang B, Okada K
1452 - 1455 Calculation of Electronic-Energy Levels in Artificially Confined Cavities of a Sphere and a Circular-Cylinder
Zhao YF, Jing XG, Li LS, Wang LJ, Hui Z, Li TJ
1456 - 1459 Preparation and Structural Characterization of Nanostructured Coag Granular Films
Sang H, Ni G, Lu J, Chen H, Zhang JR, Du YW
1460 - 1464 Fabrication, Characterization, and the Photoelectric Conversion of the Nanostructured TiO2 Electrode
Deng HH, Lu ZH, Mao HF, Xu HJ
1465 - 1467 Surface Vibrational-Mode of ZnS Nanoparticles
Xu JF, Mao HT, Sun Y, Du YW
1468 - 1470 Photovoltaic Study of Nanocrystalline TiO2 Film-Modified with Dye Molecules
Fang JH, Wu JW, Lu XM, Gu JH, Lu ZH
1471 - 1473 Visible Luminescence from Si/SiO2 Superlattices
Novikov SV, Sinkkonen J, Kilpela O, Gastev SV
1474 - 1478 Numerical Study of Optical-Transmission in Sandwich Slabs - Implication to Photon Scanning-Tunneling-Microscopy
Wang S, Xiao MF, Siqueiros JM
1479 - 1482 Analysis of Frictional-Force Image Patterns of a Graphite Surface
Sasaki N, Tsukada M, Fujisawa S, Sugawara Y, Morita S, Kobayashi K
1483 - 1493 Quantification of Topographic Structure by Scanning Probe Microscopy
Kiely JD, Bonnell DA
1494 - 1497 Error Budget of Step Height and Pitch Measurement Using a Scanning Tunneling Microscope with a 3-Dimensional Interferometer
Fujii T, Yamaguchi M, Suzuki M, Yamada H, Nakayama K
1498 - 1501 Principle of Atomic Grating and Its Application in Nanotechnology
Hao HW, Qiao H, Cheng HK, Wei WW, Yi WK
1502 - 1505 Size and Arrangement of Elementary Fibrils in Crystalline Cellulose Studied with Scanning-Tunneling-Microscopy
Zhang YZ, Chen XL, Liu J, Gao PJ, Shi DX, Pang SJ
1506 - 1511 Nanomechanical Surface Characterization by Atomic-Force Acoustic Microscopy
Rabe U, Scherer V, Hirsekorn S, Arnold W
1512 - 1515 Detection Mechanism of an Optical Evanescent Field Using a Noncontact Mode Atomic-Force Microscope with a Frequency-Modulation Detection Method
Abe M, Uchihashi T, Ohta M, Ueyama H, Sugawara Y, Morita S
1516 - 1520 Fabrication of Probe Tips for Reflection Scanning Near-Field Optical Microscopes - Chemical Etching and Heating-Pulling Methods
Xiao MF, Nieto J, Machorro R, Siqueiros J, Escamilla H
1521 - 1526 Near-Field Optical Microscopy with Uncoated Tips - Calibration, Chemical Contrast on Organic-Crystals, and Photolithography
Kaupp G, Herrmann A, Haak M
1527 - 1530 Preparation of Probe Tips with Well-Defined Spherical Apexes for Quantitative Scanning Force Spectroscopy
Schwarz UD, Zworner O, Koster P, Wiesendanger R
1531 - 1534 Fabrication of a Si Scanning Probe Microscopy Tip with an Ultrahigh Vacuum-Scanning Tunneling Microscope Atomic-Force Microscope
Ono T, Saitoh H, Esashi M
1535 - 1538 Conductive Supertips for Scanning Probe Applications
Schossler C, Urban J, Koops HW
1539 - 1542 Simultaneous Optical-Detection Techniques, Interferometry, and Optical Beam Deflection for Dynamic-Mode Control of Scanning Force Microscopy
Hoummady M, Farnault E, Yahiro T, Kawakatsu H
1543 - 1546 Development of Ultrahigh-Vacuum Atomic-Force Microscopy with Frequency-Modulation Detection and Its Application to Electrostatic Force Measurement
Uchihashi T, Ohta M, Sugawara Y, Yanase Y, Sigematsu T, Suzuki M, Morita S
1547 - 1550 Development of a Metal Patterned Cantilever for Scanning Capacitance Microscopy and Its Application to the Observation of Semiconductor-Devices
Yamamoto T, Suzuki Y, Miyashita M, Sugimura H, Nakagiri N
1551 - 1555 Novel High-Vacuum Scanning Force Microscope Using a Piezoelectric Cantilever and the Phase Detection Method
Chu JR, Itoh T, Lee CK, Suga T, Watanabe K
1556 - 1558 New Technique for Nanocantilever Fabrication Based on Local Electrochemical Etching - Applications to Scanning Force Microscopy
Hoummady M, Farnault E, Fujita H, Kawakatsu H, Masuzawa T
1559 - 1563 Development of a Piezoelectric Self-Excitation and Self-Detection Mechanism in PZT Microcantilevers for Dynamic Scanning Force Microscopy in Liquid
Lee CK, Itoh T, Ohashi T, Maeda R, Suga T
1564 - 1568 Interface Imaging by 2nd-Harmonic Microscopy
Florsheimer M, Bosch M, Brillert C, Wierschem M, Fuchs H
1569 - 1572 Scanning Acoustic Tunneling Microscopy and Spectroscopy - A Probing Tool for Acoustic Surface Oscillations
Hesjedal T, Chilla E, Frohlich HJ
1573 - 1576 Investigation on a Novel Vacuum Microelectronic Pressure Sensor with Stepped Field-Emission Array
Xia SH, Liu J, Cui DF, Han JH, Chen SF, Wang L
1577 - 1580 Robotic Nanomanipulation with a Scanning Probe Microscope in a Networked Computing Environment
Baur C, Gazen BC, Koel B, Ramachandran TR, Requicha AA, Zini L
1581 - 1583 Using a New Kind of Organic-Complex System of Electrical Bistability for Ultrahigh Density Data-Storage
Gao HJ, Ma LP, Zhang HX, Chen HY, Xue ZQ, Pang SJ
1584 - 1587 Atomic-Force Microscope-Based Data-Storage Using Replicated Media
Terris BD, Rishton SA, Mamin HJ, Best ME, Logan JA, Rugar D