화학공학소재연구정보센터

Solid-State Electronics

Solid-State Electronics, Vol.80 Entire volume, number list
ISSN: 0038-1101 (Print) 

In this Issue (24 articles)

1 - 4 Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs
Peng MZ, Zheng YK, Ge Q, Wei K, Liu XY
5 - 9 HfO2 nanocrystal memory on SiGe channel
Lin YH, Chien CH
10 - 13 Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation
Baek CK, Kang D, Kim J, Jin B, Rim T, Park S, Meyyappan M, Jeong YH, Lee JS
14 - 18 Structural spectral response tuning in organic deep ultraviolet photodetectors
Zhu L, Wang WS, Yao ZG, Zhang XQ, Wang YS
19 - 22 Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
23 - 27 Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
Goswami A, Trew RJ, Bilbro GL
28 - 32 A simple compact model for long-channel junctionless Double Gate MOSFETs
Lime F, Santana E, Iniguez B
33 - 37 Optoelectronic properties of cauliflower like ZnO-ZnO nanorod/p-Si heterostructure
Rajabi M, Dariani RS, Zad AI, Zahedi F
38 - 44 Analysis of the electrical characteristics of 600 V-Class electron irradiated fast recovery Superjunction VDMOS
Zhu J, Zhang L, Sun WF, Qian QS, Ma WL, Yang Z, Lu SL
45 - 54 Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
Manifacier JC
55 - 58 Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures
Yang R, Qian H, Li JF, Xiong YZ, Shi JL, Loh WY, Yu MB, Lo PGQ, Balasubramanian N, Kwong DL
59 - 62 Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies
Chang HY, Chopra S, Adams B, Li JP, Sharma S, Kim Y, Moffatt S, Woo JCS
63 - 66 Spin polarized hole transport in poly(2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylenevinylene)
Shukla M, Kumar P
67 - 71 Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs
Sensale-Rodriguez B, Guo J, Wang RH, Verma J, Li GW, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo SP, Snider G, Fay P, Jena D, Xing HG
72 - 75 Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs
Lee MH, Tai CW, Huang JJ
76 - 80 Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology
Chen WJ, Zhang J, Zhang B, Li ZJ
81 - 95 A comprehensive review on microwave FinFET modeling for progressing beyond the state of art
Crupi G, Schreurs DMMP, Raskin JP, Caddemi A
96 - 104 Modelling of MWIR HgCdTe complementary barrier HOT detector
Martyniuk P, Rogalski A
105 - 109 A solution to reducing insertion loss and achieving high sidelobe rejection for wavelet transform and reconstruction processor using SAW devices
Jiang H, Lu WK, Zhang GA, Xie ZG
110 - 117 Diffusion formation of nickel suicide contacts in SiNWs
Beregovsky M, Katsman A, Hajaj EM, Yaish YE
118 - 123 IGBT scaling principle toward CMOS compatible wafer processes
Tanaka M, Omura I
124 - 134 k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire
Ghosh RK, Bhattacharya S, Mahapatra S
135 - 141 Low-temperature electrical characterization of junctionless transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
142 - 151 Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions
Godet C, Fadjie-Djomkam AB, Ababou-Girard S