화학공학소재연구정보센터

Solid-State Electronics

Solid-State Electronics, Vol.154 Entire volume, number list
ISSN: 0038-1101 (Print) 

In this Issue (9 articles)

1 - 6 Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
7 - 11 A macro model of RF Schottky diode in 22-nm CMOS and its application
Xu C, Yu PP, Jiang YF
12 - 15 Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
Pichon L, Yang K, Salaun AC
16 - 19 Reconfigurable logic for carry-out computing in 1-bit full adder using a single magnetic tunnel junction
Bae GY, Hwang Y, Lee S, Kim T, Park W
20 - 23 Silicon-based high-integration reconfigurable dipole with SPiN
Su H, Hu HY, Mousavi P, Zhang HM, Wang B, Miao YH
24 - 30 Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
Trojman L, Ragnarsson LA, Collaert N
31 - 35 Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
Lee DK, Kim MH, Kim TH, Bang S, Choi YJ, Kim S, Cho S, Park BG
36 - 42 On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs
Kumari A, Kumar S, Sharma TK, Das MK
43 - 49 High concentration phosphorus doping in Ge for CMOS-integrated laser applications
Park CH, Yako M, Wada K, Ishikawa Y, Ahn D