화학공학소재연구정보센터

Solid-State Electronics

Solid-State Electronics, Vol.125 Entire volume, number list
ISSN: 0038-1101 (Print) 

In this Issue (29 articles)

1 - 1 Extended papers selected from ESSDERC 2015
Grasser T, Schmitz J, Lemme MC
2 - 13 Theoretical analysis and modeling for nanoelectronics
Baccarani G, Gnani E, Gnudi A, Reggiani S
14 - 24 UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels
Berthier F, Beigne E, Heitzmann F, Debicki O, Christmann JF, Valentian A, Billoint O, Amat E, Morche D, Chairat S, Sentieys O
25 - 38 A review of emerging non-volatile memory (NVM) technologies and applications
Chen A
39 - 51 Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications
Gatensby R, Hallam T, Lee K, McEvoy N, Duesberg GS
52 - 62 The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits
Kaczer B, Franco J, Weckx P, Roussel PJ, Simicic M, Putcha V, Bury E, Cho M, Degraeve R, Linten D, Groeseneken G, Debacker P, Parvais B, Raghavan P, Catthoor F, Rzepa G, Waltl M, Goes W, Grasser T
63 - 72 UTBB FDSOI: Evolution and opportunities
Monfray S, Skotnicki T
73 - 81 FinFET and UTBB for RF SOI communication systems
Raskin JP
82 - 102 III-V/Ge MOS device technologies for low power integrated systems
Takagi S, Noguchi M, Kim M, Kim SH, Chang CY, Yokoyama M, Nishi K, Zhang R, Ke M, Takenaka M
103 - 110 A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
El Dirani H, Solaro Y, Fonteneau P, Legrand CA, Marin-Cudraz D, Golanski D, Ferrari P, Cristoloveanu S
111 - 117 The world's first high voltage GaN-on-Diamond power semiconductor devices
Baltynov T, Unni V, Narayanan EMS
118 - 124 Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G
125 - 132 Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss SA, Kilian S, Schwaiger S, Noll S, Daves W, Ambacher O
133 - 141 EDMOS in ultrathin FDSOI: Impact of the drift region properties
Litty A, Ortolland S, Golanski D, Dutto C, Cristoloveanu S
142 - 153 Characterization of charge trapping phenomena at III-N/dielectric interfaces
Stradiotto R, Pobegen G, Ostermaier C, Grasser T
154 - 160 Back-gate effects and mobility characterization in junctionless transistor
Parihar MS, Liu FY, Navarro C, Barraud S, Bawedin M, Ionica I, Kranti A, Cristoloveanu S
161 - 166 Contact resistance extraction methods for short- and long-channel
Pacheco-Sanchez A, Claus M, Mothes S, Schroter M
167 - 174 Low-frequency noise in bare SOI wafers: Experiments and model
Pirro L, Ionica I, Cristoloveanu S, Ghibaudo G
175 - 181 Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model
Pelloux-Prayer J, Casse M, Triozon F, Barraud S, Niquet YM, Rouviere JL, Faynot O, Reimbold G
182 - 188 Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3
Azzaz M, Benoist A, Vianello E, Garbin D, Jalaguier E, Cagli C, Charpin C, Bernasconi S, Jeannot S, Dewolf T, Audoit G, Guedj C, Denorme S, Candelier P, Fenouillet-Beranger C, Perniola L
189 - 197 Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A)
Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L
198 - 203 Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)
Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M
204 - 213 Anomalous random telegraph noise and temporary phenomena in resistive random access memory
Puglisi FM, Larcher L, Padovani A, Pavan P
214 - 219 Compact heterodyne NEMS oscillator for sensing applications
Sansa M, Gourlat G, Jourdan G, Gely M, Villard P, Sicard G, Hentz S
220 - 226 Tri-linear color multi-linescan sensor with 200 kHz line rate
Schrey O, Brockherde W, Nitta C, Bechen B, Bodenstorfer E, Brodersen J, Mayer KJ
227 - 233 Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method
Pelamatti A, Goiffon V, Chabane A, Magnan P, Virmontois C, Saint-Pe O, de Boisanger MB
234 - 239 Contact resistance study of various metal electrodes with CVD graphene
Gahoi A, Wagner S, Bablich A, Kataria S, Passi V, Lemme MC
240 - 246 Plasmonic and electronic device-based integrated circuits and their characteristics
Sakai H, Okahisa S, Nakayama Y, Nakayama K, Fukuhara M, Kimura Y, Ishii Y, Fukuda M
247 - 253 Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A
Ziemys G, Giebfried A, Becherer M, Eichwald I, Schmitt-Landsiedel D, Breitkreutz-von Gamm S