화학공학소재연구정보센터

Solid-State Electronics

Solid-State Electronics, Vol.111 Entire volume, number list
ISSN: 0038-1101 (Print) 

In this Issue (39 articles)

1 - 6 On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
Joodaki M
7 - 11 Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-kappa HfO2 LTPS-TFTs
Chang KM, Huang BW, Wu CH, Deng IC, Chang TC, Lin SC
12 - 17 Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
Taube A, Kaczmarski J, Kruszka R, Grochowski J, Kosiel K, Golaszewska-Malec K, Sochacki M, Jung W, Kaminska E, Piotrowska A
18 - 21 Effect of annealing temperature on the electrical properties of In-Zn-Li-O thin film transistors
Li B, Wang HL, Zhou DZ, Hu ZF, Wu HH, Peng YF, Yi LX, Zhang XQ, Wang YS
22 - 26 Effect of uncertainty principle on the Wigner function-based simulation of quantum transport
Kim KY, Kim S
27 - 31 Engineering of chalcogenide materials for embedded applications of Phase Change Memory
Zuliani P, Palumbo E, Borghi M, Libera GD, Annunziata R
32 - 41 A modern perspective on the history of semiconductor nitride blue light sources
Maruska HP, Rhines WC
42 - 46 Multilevel metal/Pb(Zr0.52Ti0.48)O-3/TiOxNy/Si for next generation FeRAM technology node
Sharma DK, Khosla R, Sharma SK
47 - 51 An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
Villena MA, Gonzalez MB, Roldan JB, Campabadal F, Jimenez-Molinos F, Gomez-Campos FM, Sune J
52 - 57 All regimes mobility extraction using split C-V technique enhanced with charge-sheet model
Hubert Q, Carmona M, Rebuffat B, Innocenti J, Masson P, Masoero L, Julien F, Lopez L, Chiquet P
58 - 61 Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics
Walker B, Pradhan AK, Xiao B
62 - 66 Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors
Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H
67 - 75 Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability
Kim SC, Kim YS, Yu EKH, Kanicki J
76 - 79 Response of plasmonic terahertz detectors to amplitude modulated signals
Rupper G, Rudin S, Shur M
80 - 90 Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model
Banadaki YM, Srivastava A
91 - 99 Integration of GMR-based spin torque oscillators and CMOS circuitry
Chen T, Eklund A, Sani S, Rodriguez S, Malm BG, Akerman J, Rusu A
100 - 103 Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology
Theodorou CG, Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G
104 - 110 Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies
Bota SA, Torrens G, Verd J, Segura J
111 - 117 High-power UV-LED degradation: Continuous and cycled working condition influence
Arques-Orobon FJ, Nunez N, Vazquez M, Segura-Antunez C, Gonzalez-Posadas V
118 - 122 Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology
Sun LJ, Shang GB, Liu LL, Cheng J, Guo A, Ren Z, Hu SJ, Chen SM, Zhao YH, Chan MS, Zhang L, Li XJ, Shi YL
123 - 128 Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
Karatsori TA, Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G
129 - 140 Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs
Tokutomi T, Tanakamaru S, Iwasaki TO, Takeuchi K
141 - 146 Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors
Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S
147 - 152 Efficiency analysis of betavoltaic elements
Sachenko AV, Shkrebtii AI, Korkishko RM, Kostylyov VP, Kulish MR, Sokolovskyi IO
153 - 160 Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors
Bak JY, Kim SJ, Byun CW, Pi JE, Ryu MK, Hwang CS, Yoon SM
161 - 165 Conductive filament structure in HfO2 resistive switching memory devices
Privitera S, Bersuker G, Lombardo S, Bongiorno C, Gilmer DC
166 - 170 Effects of the optical absorption of a LED chip on the LED package
Kim KH, Kim WH, Jeon SW, Choi M, Bin Song S, Kim JP
171 - 179 Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET
Xu WJ, Wong H, Iwai H
180 - 187 A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners
Moreno E, Villada MP, Ruiz FG, Roldan JB, Marin EG
188 - 195 Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials
Hiblot G, Rafhay Q, Boeuf F, Ghibaudo G
196 - 203 Compact model for short-channel symmetric double-gate junctionless transistors
Avila-Herrera F, Cerdeira A, Paz BC, Estrada M, Iniguez B, Pavanello MA
204 - 209 Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver
Song SJ, Kim BH, Jang J, Nam H
210 - 217 Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes
Mok KRC, Qi L, Vlooswijk AHG, Nanver LK
218 - 222 Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator
Kim T, Kim DH
223 - 226 Surface treatment to improve responsivity of MgZnO UV detectors
Zhao YJ, Jiang DY, Liu RS, Duan Q, Tian CG, Sun L, Gao S, Qin JM, Liang QC, Zhao JX
227 - 233 Commercially applicable, solution-processed organic TFT and its backplane application in electrophoretic displays
Park CB, Lee JE, Na H, Kim KM, Yoo SS, Yang MS
234 - 237 Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes
Gaur A, Filmer M, Thomas P, Bhatnagar K, Droopad R, Rommel S
238 - 242 Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices
Recher S, Yalon E, Ritter D, Riess I, Salzman J
243 - 250 Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance
Courel M, Andrade-Arvizu JA, Vigil-Galan O