화학공학소재연구정보센터
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No. Article
981 Polyelectrolyte multilayers and their interactions
Muller M, Meier-Haack J, Schwarz S, Buchhammer HM, Eichhorn EJ, Janke A, Kessler B, Nagel J, Oelmann M, Reihs T, Lunkwitz K
Journal of Adhesion, 80(6), 521, 2004
982 Constrained photophysics of 3-acetyl-4-oxo-6,7-dihydro-12H indolo-[2,3-a] quinolizine in micellar environments: a spectrofiuorometric study
Mallick A, Haldar B, Maiti S, Chattopadhyay N
Journal of Colloid and Interface Science, 278(1), 215, 2004
983 In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy
Pristovsek M, Zorn M, Weyers M
Journal of Crystal Growth, 262(1-4), 78, 2004
984 In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy
Pristovsek M, Tsukamoto S
Journal of Crystal Growth, 265(3-4), 425, 2004
985 Finite element method for epitaxial island growth
Hausser F, Voigt A
Journal of Crystal Growth, 266(1-3), 381, 2004
986 Dislocation density analysis of GaAs bulk single crystal during ingot annealing process (comparison among several computational methods)
Miyazaki N, Kumamoto A, Harada C
Journal of Crystal Growth, 271(3-4), 358, 2004
987 Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE
Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W
Journal of Crystal Growth, 272(1-4), 30, 2004
988 Growth monitoring of GaAsSb : C/InP hetero structures with reflectance anisotropy spectroscopy
Brunner F, Weeke S, Zorn M, Weyers M
Journal of Crystal Growth, 272(1-4), 111, 2004
989 Routine growth of InP based device structures using process calibration with optical in-situ techniques
Wolfram P, Steimetz E, Ebert W, Grote N, Zettler JT
Journal of Crystal Growth, 272(1-4), 118, 2004
990 Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy
Pohl UW, Potschke K, Kaiander I, Zettler JT, Bimberg D
Journal of Crystal Growth, 272(1-4), 143, 2004