981 |
In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy Pristovsek M, Zorn M, Weyers M Journal of Crystal Growth, 262(1-4), 78, 2004 |
982 |
In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy Pristovsek M, Tsukamoto S Journal of Crystal Growth, 265(3-4), 425, 2004 |
983 |
Finite element method for epitaxial island growth Hausser F, Voigt A Journal of Crystal Growth, 266(1-3), 381, 2004 |
984 |
Dislocation density analysis of GaAs bulk single crystal during ingot annealing process (comparison among several computational methods) Miyazaki N, Kumamoto A, Harada C Journal of Crystal Growth, 271(3-4), 358, 2004 |
985 |
Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W Journal of Crystal Growth, 272(1-4), 30, 2004 |
986 |
Growth monitoring of GaAsSb : C/InP hetero structures with reflectance anisotropy spectroscopy Brunner F, Weeke S, Zorn M, Weyers M Journal of Crystal Growth, 272(1-4), 111, 2004 |
987 |
Routine growth of InP based device structures using process calibration with optical in-situ techniques Wolfram P, Steimetz E, Ebert W, Grote N, Zettler JT Journal of Crystal Growth, 272(1-4), 118, 2004 |
988 |
Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy Pohl UW, Potschke K, Kaiander I, Zettler JT, Bimberg D Journal of Crystal Growth, 272(1-4), 143, 2004 |
989 |
Anisotropic elastic moduli and Poisson's ratios of a poly(ethylene terephthalate) film Zhang SL, Li JCM Journal of Polymer Science Part B: Polymer Physics, 42(2), 260, 2004 |
990 |
Ionomers based on copolymers of alkyl methacrylates with 2-methacryloylamino-3-naphthalene carboxylic acid: Association in solutions studied by steady-state and time-resolved fluorescence Vyprachticky D, Cimrova V, Yang Y, Mikes F Journal of Polymer Science Part B: Polymer Physics, 42(7), 1243, 2004 |