화학공학소재연구정보센터
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No. Article
981 The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
Ruan DB, Liu PT, Gan KJ, Chiu YC, Yu MC, Chien TC, Chen YH, Kuo PY, Sze SM
Thin Solid Films, 666, 94, 2018
982 A nanoporous substrate-based low temperature solid oxide fuel cell using a thin film Ni anode
Lee S, Cho GY, Park T, Lee YH, Yu W, Lee Y, Chang I, Cha SW
Thin Solid Films, 666, 177, 2018
983 Control of physical and microstructural properties in molybdenum by direct current magnetron sputtering deposition producing bilayer thin film
Latif R, Aziz MF, Majlis BY
Thin Solid Films, 665, 17, 2018
984 Growth mode transition in Au-based thin film metallic glasses
Denis P, Liu SY, Fecht HJ
Thin Solid Films, 665, 29, 2018
985 Etch characteristics of copper thin films in high density plasma of CH4/O-2/Ar gas mixture
Lim ET, Ryu JS, Chung CW
Thin Solid Films, 665, 51, 2018
986 Structure control of a zinc tetraphenylporphyrin thin film by vapor annealing using fluorine containing solvent
Tomita K, Shioya N, Kise R, Shimoaka T, Yoshida H, Koganezawa T, Eda K, Hasegawa T
Thin Solid Films, 665, 85, 2018
987 Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric
Ruan DB, Liu PT, Chiu YC, Yu MC, Gan KJ, Chien TC, Chen YH, Kuo PY, Sze SM
Thin Solid Films, 665, 117, 2018
988 Early stages of growth of Pb, Sn and Ge on Ru(0001): A comparative density functional theory study
Topolnicki R, Kucharczyk R
Thin Solid Films, 665, 123, 2018
989 SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors
Takahashi T, Hoga T, Miyanaga R, Fujii MN, Ishikawa Y, Uraoka Y, Uchiyama K
Thin Solid Films, 665, 173, 2018
990 Fabrication of an all solid-state electrochromic device using zirconium dioxide as an ion-conducting layer
Atak G, Coskun OD
Thin Solid Films, 664, 70, 2018