화학공학소재연구정보센터
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No. Article
961 Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
Tseng PH, Hwu JG
Thin Solid Films, 556, 317, 2014
962 N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T
Thin Solid Films, 557, 90, 2014
963 Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures
Yoshida N, Waki E, Arai M, Yamasaki K, Han JH, Takenaka M, Takagi S
Thin Solid Films, 557, 237, 2014
964 Schottky barrier height systematics studied by partisan interlayer
Long W, Li Y, Tung RT
Thin Solid Films, 557, 254, 2014
965 Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
Tayagaki T, Hoshi Y, Ooi K, Kiguchi T, Usami N
Thin Solid Films, 557, 368, 2014
966 Fabrication of beta-AgGaO2 thin films by radio frequency magnetron sputtering
Suzuki I, Nagatani H, Arima Y, Kita M, Omata T
Thin Solid Films, 559, 112, 2014
967 A practical method for optical dispersion model selection and parameters variations in scatterometry analysis with variable n&k's
Likhachev DV
Thin Solid Films, 562, 90, 2014
968 Deposition and current conduction of mixed hexagonal and cubic phases of AlN/p-Si films prepared by vacuum arc discharge: Effect of deposition temperature
Abdallah B, Al-Khawaja S, Alkhawwam A, Ismail IM
Thin Solid Films, 562, 152, 2014
969 Molecular beam epitaxy of SrTiO3 on GaAs (001): GaAs surface treatment and structural characterization of the oxide layer
Louahadj L, Bachelet R, Regreny P, Largeau L, Dubourdieu C, Saint-Girons G
Thin Solid Films, 563, 2, 2014
970 Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes
Akkaya A, Karaaslan T, Dede M, Cetin H, Ayyildiz E
Thin Solid Films, 564, 367, 2014