961 |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide Tseng PH, Hwu JG Thin Solid Films, 556, 317, 2014 |
962 |
N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T Thin Solid Films, 557, 90, 2014 |
963 |
Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures Yoshida N, Waki E, Arai M, Yamasaki K, Han JH, Takenaka M, Takagi S Thin Solid Films, 557, 237, 2014 |
964 |
Schottky barrier height systematics studied by partisan interlayer Long W, Li Y, Tung RT Thin Solid Films, 557, 254, 2014 |
965 |
Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells Tayagaki T, Hoshi Y, Ooi K, Kiguchi T, Usami N Thin Solid Films, 557, 368, 2014 |
966 |
Fabrication of beta-AgGaO2 thin films by radio frequency magnetron sputtering Suzuki I, Nagatani H, Arima Y, Kita M, Omata T Thin Solid Films, 559, 112, 2014 |
967 |
A practical method for optical dispersion model selection and parameters variations in scatterometry analysis with variable n&k's Likhachev DV Thin Solid Films, 562, 90, 2014 |
968 |
Deposition and current conduction of mixed hexagonal and cubic phases of AlN/p-Si films prepared by vacuum arc discharge: Effect of deposition temperature Abdallah B, Al-Khawaja S, Alkhawwam A, Ismail IM Thin Solid Films, 562, 152, 2014 |
969 |
Molecular beam epitaxy of SrTiO3 on GaAs (001): GaAs surface treatment and structural characterization of the oxide layer Louahadj L, Bachelet R, Regreny P, Largeau L, Dubourdieu C, Saint-Girons G Thin Solid Films, 563, 2, 2014 |
970 |
Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes Akkaya A, Karaaslan T, Dede M, Cetin H, Ayyildiz E Thin Solid Films, 564, 367, 2014 |