화학공학소재연구정보센터
검색결과 : 1,012건
No. Article
941 A Reduced-Fluid Dynamic Discharge Model for Applications in Technology-Oriented Computer-Aided-Design
Brinkmann RP, Furst R, Werner C, Hierlemann M
Journal of the Electrochemical Society, 143(6), 1940, 1996
942 Synthesis of Silicon-Nitride Particles in Pulsed Radio-Frequency Plasmas
Buss RJ, Babu SV
Journal of Vacuum Science & Technology A, 14(2), 577, 1996
943 Detection of Dust Particles in the Plasma by Laser-Induced Heating
Stoffels WW, Stoffels E, Kroesen GM, Dehoog FJ
Journal of Vacuum Science & Technology A, 14(2), 588, 1996
944 Optimization of Selective TiSi2 Chemical-Vapor-Deposition by Mechanistic Chemical-Kinetics
Southwell RP, Mendicino MA, Seebauer EG
Journal of Vacuum Science & Technology A, 14(3), 928, 1996
945 Interaction of SiH4 with Si(100)2X1 and with Si(111)7X7 at 690 K - A Comparative Scanning-Tunneling-Microscopy Study
Fehrenbacher M, Spitzmuller J, Memmert U, Rauscher H, Behm RJ
Journal of Vacuum Science & Technology A, 14(3), 1499, 1996
946 Reactor Modeling for Radio-Frequency Plasma Deposition of Sinxhy - Comparison Between 2 Reactor Designs
Caquineau H, Dupont G, Despax B, Couderc JP
Journal of Vacuum Science & Technology A, 14(4), 2071, 1996
947 Ion-Surface Interactions in Low-Temperature Silicon Epitaxy by Remote Plasma-Enhanced Chemical-Vapor-Deposition
Habermehl S, Lucovsky G
Journal of Vacuum Science & Technology A, 14(6), 3024, 1996
948 Simulation-Model to Very-Low Pressure Chemical-Vapor-Deposition of SiGe Alloy
Gu SL, Wang RH, Zhang R, Zheng YD
Journal of Vacuum Science & Technology A, 14(6), 3256, 1996
949 Epitaxial-Growth of Si1-X-Ygexcy Alloy Layers on (100)Si by Rapid Thermal Chemical-Vapor-Deposition Using Methylsilane
Mi J, Warren P, Gailhanou M, Ganiere JD, Dutoit M, Jouneau PH, Houriet R
Journal of Vacuum Science & Technology B, 14(3), 1660, 1996
950 Theoretical Investigation of the Origins of Abrupt Thermochromism in the Polysilanes
Gahimer T, Welsh WJ
Polymer, 37(10), 1815, 1996