화학공학소재연구정보센터
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No. Article
921 Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique
Qiang L, Liang XC, Cai GS, Pei YL, Yao RH, Wang G
Solid-State Electronics, 144, 22, 2018
922 Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer
Fan CL, Lin WC, Chen HW
Solid-State Electronics, 144, 28, 2018
923 Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors
Chae HJ, Seok KH, Lee SK, Joo SK
Solid-State Electronics, 142, 20, 2018
924 A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
Cai MX, Yao RH
Solid-State Electronics, 141, 23, 2018
925 Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes
Zeng XL, Hirwa H, Metel S, Nicolosi V, Wagner V
Solid-State Electronics, 141, 58, 2018
926 TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing
Shan F, Kim SJ
Solid-State Electronics, 140, 86, 2018
927 Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
Chen BW, Yu EK, Chang TC, Kanicki J
Solid-State Electronics, 147, 51, 2018
928 Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors
Jian LY, Lee HY, Lin YH, Lee CT
Solid-State Electronics, 145, 54, 2018
929 Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment
Knobelspies S, Takabayashi A, Daus A, Cantarella G, Munzenrieder N, Troster G
Solid-State Electronics, 150, 23, 2018
930 Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress
Park J, Jang KS, Shin DG, Shin M, Yi JS
Solid-State Electronics, 148, 20, 2018