화학공학소재연구정보센터
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No. Article
911 Lithium diffusion coefficient in LiMn2O4 thin films measured by secondary ion mass spectrometry with ion-exchange method
Kuwata N, Nakane M, Miyazaki T, Mitsuishi K, Kawamura J
Solid State Ionics, 320, 266, 2018
912 Improved performance of all-solid-state lithium batteries using LiPON electrolyte prepared with Li-rich sputtering
Xiao DL, Tong J, Feng Y, Zhong GH, Li WJ, Yang CL
Solid State Ionics, 324, 202, 2018
913 Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method
Lee BH, Han S, Lee SY
Solid-State Electronics, 139, 15, 2018
914 Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique
Qiang L, Liang XC, Cai GS, Pei YL, Yao RH, Wang G
Solid-State Electronics, 144, 22, 2018
915 Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer
Fan CL, Lin WC, Chen HW
Solid-State Electronics, 144, 28, 2018
916 Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors
Chae HJ, Seok KH, Lee SK, Joo SK
Solid-State Electronics, 142, 20, 2018
917 A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
Cai MX, Yao RH
Solid-State Electronics, 141, 23, 2018
918 Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes
Zeng XL, Hirwa H, Metel S, Nicolosi V, Wagner V
Solid-State Electronics, 141, 58, 2018
919 TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing
Shan F, Kim SJ
Solid-State Electronics, 140, 86, 2018
920 Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
Chen BW, Yu EK, Chang TC, Kanicki J
Solid-State Electronics, 147, 51, 2018