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Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices Chandra SVJ, Fortunato E, Martins R, Choi CJ Thin Solid Films, 520(14), 4556, 2012 |
82 |
Capacitorless single transistor dynamic random-access memory devices fabricated on silicon-germanium-on-insulator substrates Jung SM, Cho WJ Thin Solid Films, 520(19), 6268, 2012 |
83 |
Growth of poly-crystalline silicon-germanium on silicon by aluminum-induced crystallization Lin JY, Chang PY Thin Solid Films, 520(23), 6893, 2012 |
84 |
Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers Mallik S, Mukherjee C, Mahata C, Hota MK, Das T, Dalapati GK, Gao H, Kumar MK, Chi DZ, Sarkar CK, Maiti CK Thin Solid Films, 522, 267, 2012 |
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Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS Py M, Saracco E, Damlencourt JF, Barnes JP, Fabbri JM, Hartmann JM Applied Surface Science, 257(22), 9414, 2011 |
86 |
STM study of successive Ge growth on "V"-stripe patterned Si (001) surfaces at different growth temperatures Sanduijav B, Matei DG, Springholz G Applied Surface Science, 257(24), 10465, 2011 |
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Local strained silicon platform based on differential SiGe/Si epitaxy Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J Journal of Crystal Growth, 324(1), 154, 2011 |
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Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL Journal of Crystal Growth, 328(1), 18, 2011 |
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Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials Pribat C, Dutartre D Journal of Crystal Growth, 334(1), 138, 2011 |
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Electrochemical characterizations of multi-layer and composite silicon-germanium anodes for Li-ion batteries using magnetron sputtering Hwang CM, Park JW Journal of Power Sources, 196(16), 6772, 2011 |