화학공학소재연구정보센터
검색결과 : 270건
No. Article
81 Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices
Chandra SVJ, Fortunato E, Martins R, Choi CJ
Thin Solid Films, 520(14), 4556, 2012
82 Capacitorless single transistor dynamic random-access memory devices fabricated on silicon-germanium-on-insulator substrates
Jung SM, Cho WJ
Thin Solid Films, 520(19), 6268, 2012
83 Growth of poly-crystalline silicon-germanium on silicon by aluminum-induced crystallization
Lin JY, Chang PY
Thin Solid Films, 520(23), 6893, 2012
84 Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers
Mallik S, Mukherjee C, Mahata C, Hota MK, Das T, Dalapati GK, Gao H, Kumar MK, Chi DZ, Sarkar CK, Maiti CK
Thin Solid Films, 522, 267, 2012
85 Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS
Py M, Saracco E, Damlencourt JF, Barnes JP, Fabbri JM, Hartmann JM
Applied Surface Science, 257(22), 9414, 2011
86 STM study of successive Ge growth on "V"-stripe patterned Si (001) surfaces at different growth temperatures
Sanduijav B, Matei DG, Springholz G
Applied Surface Science, 257(24), 10465, 2011
87 Local strained silicon platform based on differential SiGe/Si epitaxy
Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J
Journal of Crystal Growth, 324(1), 154, 2011
88 Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL
Journal of Crystal Growth, 328(1), 18, 2011
89 Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials
Pribat C, Dutartre D
Journal of Crystal Growth, 334(1), 138, 2011
90 Electrochemical characterizations of multi-layer and composite silicon-germanium anodes for Li-ion batteries using magnetron sputtering
Hwang CM, Park JW
Journal of Power Sources, 196(16), 6772, 2011