화학공학소재연구정보센터
검색결과 : 87건
No. Article
81 Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C
Journal of Crystal Growth, 231(4), 466, 2001
82 Effects of stress on the microstructure of the corner defect in As+-implanted, two-dimensional amorphized Si
Shin YG, Lee JY, Park MH, Kang HK
Journal of Crystal Growth, 233(4), 673, 2001
83 Dependence of wet oxidation on the defect density in 3C-SiC
Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J
Materials Science Forum, 353-356, 663, 2001
84 Initial stage of crystallization in the growth of silicon carbide on substrates with micropipes
Khlebnikov I, Cherednichenko D, Khlebnikov Y, Sudarshan TS
Materials Science Forum, 338-3, 59, 2000
85 Analysis on the formation and elimination of filamentary and planar voids in silicon carbide bulk crystals
Hofmann D, Bickermann M, Hartung W, Winnacker A
Materials Science Forum, 338-3, 445, 2000
86 Polytype and defect control of two inch diameter bulk SiC
Sasaki M, Shiomi H, Harima H, Nishino S
Materials Science Forum, 338-3, 485, 2000
87 Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)
Narayanan V, Sukidi N, Bachmann KJ, Mahajan S
Thin Solid Films, 357(1), 53, 1999