검색결과 : 89건
| No. | Article |
|---|---|
| 81 |
Kinetics of epitaxial growth of Si and SiGe films on (110)Si substrates Sugiyama N, Moriyama Y, Nakaharai S, Tezuka T, Mizuno T, Takagi S Applied Surface Science, 224(1-4), 188, 2004 |
| 82 |
Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS Takagi SI, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Maeda T Applied Surface Science, 224(1-4), 241, 2004 |
| 83 |
Modulated beam growth method for MBE grown GaN layers Liu KT, Tezuka T, Sugita S, Watari Y, Horikoshi Y, Su YK, Chang SJ Journal of Crystal Growth, 263(1-4), 400, 2004 |
| 84 |
High quality GaN epitaxial layers grown by modulated beam growth method Liu KT, Tezuka T, Sugita S, Watari Y, Horikoshi Y, Su YK, Chang SJ Materials Chemistry and Physics, 86(1), 161, 2004 |
| 85 |
p250GAP, a neural RhoGAP protein, is associated with and phosphorylated by Fyn Taniguchi S, Liu H, Nakazawa T, Yokoyama K, Tezuka T, Yamamoto T Biochemical and Biophysical Research Communications, 306(1), 151, 2003 |
| 86 |
Optimal use of coal for power generation in India Mathur R, Chand S, Tezuka T Energy Policy, 31(4), 319, 2003 |
| 87 |
Carbon tax for subsidizing photovoltaic power generation systems and its effect on carbon dioxide emissions Tezuka T, Okushima K, Sawa T Applied Energy, 72(3-4), 677, 2002 |
| 88 |
Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities Hatakeyama T, Tezuka T, Sugiyama N, Kurobe A Thin Solid Films, 369(1-2), 328, 2000 |
| 89 |
Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs Tezuka T, Kurobe A, Sugiyama N, Takagi S Thin Solid Films, 369(1-2), 338, 2000 |