화학공학소재연구정보센터
검색결과 : 982건
No. Article
81 Miscut dependent surface evolution in the process of N-polar GaN (000(1)over-bar) growth under N-rich condition
Krzyzewski F, Zaluska-Kotur MA, Turski H, Sawicka M, Skierbiszewski C
Journal of Crystal Growth, 457, 38, 2017
82 Stability diagrams for the surface patterns of GaN(000(1)over-bar) as a function of Schwoebel barrier height
Krzyzewski F, Zaluska-Kotur M
Journal of Crystal Growth, 457, 80, 2017
83 Step density waves on growing vicinal crystal surfaces - Theory and experiment
Ranguelov B, Muller P, Metois JJ, Stoyanov S
Journal of Crystal Growth, 457, 184, 2017
84 Reconstruction phase transition c(4 x 4) - (1 x 3) on the (001)InSb surface
Bakarov A, Galitsyn Y, Mansurov V, Zhuravlev K
Journal of Crystal Growth, 457, 207, 2017
85 Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents
Komatsu N, Mitani T, Hayashi Y, Kato T, Harada S, Ujihara T, Okumura H
Journal of Crystal Growth, 458, 37, 2017
86 In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T
Journal of Crystal Growth, 464, 14, 2017
87 In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA
Journal of Crystal Growth, 464, 143, 2017
88 Scaling properties of equilibrating semiconductor mounds of various initial shapes
Tuzemen AT, Esen M, Ozdemir M
Journal of Crystal Growth, 470, 94, 2017
89 Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
Gelczuk L, Jozwiak G, Moczala M, Dluzewski P, Dabrowska-Szata M, Gotszalk TP
Journal of Crystal Growth, 470, 108, 2017
90 Effect of the roughening transition on the vicinal surface in the step droplet zone
Akutsu N
Journal of Crystal Growth, 468, 57, 2017