화학공학소재연구정보센터
검색결과 : 144건
No. Article
81 Preparation of nitrogen-doped titanium oxide thin film using a PLD method as parameters of target material and nitrogen concentration ratio in nitrogen/oxygen gas mixture
Suda Y, Kawasaki H, Ueda T, Ohshima T
Thin Solid Films, 475(1-2), 337, 2005
82 Piezoelectric photothermal investigation of proton irradiation induced defects in CuInSe2 epitaxial films
Akaki Y, Ohryoji N, Fukuyama A, Yoshino K, Kawakita S, Imaizumi M, Niki S, Sakurai K, Ishizuka S, Ohshima T, Ikari T
Thin Solid Films, 480, 250, 2005
83 Expression of foreign proteins in Escherichia coli by fusing with an archaeal FK506 binding protein
Ideno A, Furutani M, Iwabuchi T, Iida T, Iba Y, Kurosawa Y, Sakuraba H, Ohshima T, Kawarabayashi Y, Maruyama T
Applied Microbiology and Biotechnology, 64(1), 99, 2004
84 Extracellular release of recombinant alpha-amylase from Escherichia coli using pulsed electric field
Shiina S, Ohshima T, Sato M
Biotechnology Progress, 20(5), 1528, 2004
85 Direct catalytic asymmetric EAidol-Tishchonko reaction
Gnanadesikan V, Horiuchi Y, Ohshima T, Shibasaki M
Journal of the American Chemical Society, 126(25), 7782, 2004
86 EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC
Umeda T, Ishitsuka Y, Isoya J, Morishita N, Ohshima T, Kamiya T
Materials Science Forum, 457-460, 465, 2004
87 Negative-U-centers in 4H-and 6H-SiC detected by spectral light excitation
Weidner M, Pensl G, Nagasawa H, Schoner A, Ohshima T
Materials Science Forum, 457-460, 485, 2004
88 Comparison of the electrical channel properties between dry- and wet-oxidized 6H-SiC MOSFETs investigated by Hall effect
Laube M, Pensl G, Lee KK, Ohshima T
Materials Science Forum, 457-460, 1381, 2004
89 Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC
Ohshima T, Lee KK, Ishida Y, Kojima K, Tanaka Y, Takahashi T, Yoshikawa M, Okumura H, Arai K, Kamiya T
Materials Science Forum, 457-460, 1405, 2004
90 Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy
Akaki Y, Ohryoji N, Yoshino K, Kawakita S, Imaizumi M, Niki S, Sakurai K, Ishizuka S, Ohshima T, Ikari T
Solid-State Electronics, 48(10-11), 1815, 2004