화학공학소재연구정보센터
검색결과 : 93건
No. Article
81 Influence of electron shading on highly selective SiO2 to Si etching
Yonekura K, Katayama T, Maruyama T, Fujiwara N, Miyatake H
Journal of Vacuum Science & Technology A, 18(1), 176, 2000
82 Magnetic phase transition of Py2N-- and NCNH--bridged nickel(II) complexes at about 25 K
Zusai K, Katayama T, Ishida T, Nogami T
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 343, 439, 2000
83 Realization of stochastic systems with exogenous inputs and subspace identification methods
Katayama T, Picci G
Automatica, 35(10), 1635, 1999
84 High-speed GaAs epitaxial lift-off and bonding with high alignment accuracy using a sapphire plate
Sasaki Y, Katayama T, Koishi T, Shibahara K, Yokoyama S, Miyazaki S, Hirose M
Journal of the Electrochemical Society, 146(2), 710, 1999
85 H-2 output feedback control for descriptor systems
Takaba K, Katayama T
Automatica, 34(7), 841, 1998
86 D-allose production from D-psicose using immobilized L-rhamnose isomerase
Bhuiyan SH, Itami Y, Rokui Y, Katayama T, Izumori K
Journal of Fermentation and Bioengineering, 85(5), 539, 1998
87 Discrete-Time H-Infinity Algebraic Riccati Equation and Parametrization of All H-Infinity Filters
Takaba K, Katayama T
International Journal of Control, 64(6), 1129, 1996
88 Investigations on High-Temperature Thermal-Oxidation Process at Top and Bottom Interfaces of Top Silicon of Simox Wafers
Nakashima S, Katayama T, Miyamura Y, Matsuzaki A, Kataoka M, Ebi D, Imai M, Izumi K, Ohwada N
Journal of the Electrochemical Society, 143(1), 244, 1996
89 Ultrathin Silicon-Nitride Films Fabricated by Single-Wafer Processing Using an Sih2Cl2-NH3-H-2 System and in-Situ H-2 Cleaning
Kobayashi K, Inaba Y, Ogata T, Katayama T, Watanabe H, Matsui Y, Hirayama M
Journal of the Electrochemical Society, 143(4), 1459, 1996
90 Wavelength Dependence of the Magnetooptical Properties of the Interfaces of a Au Sandwiched (001) Fe Film
Geerts W, Katayama T, Suzuki Y, Childress J
Journal of Vacuum Science & Technology B, 14(4), 3176, 1996