화학공학소재연구정보센터
검색결과 : 268건
No. Article
81 Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents
Wu YC, Chang EY, Lin YC, Kei CC, Hudait MK, Radosavljevic M, Wong YY, Chang CT, Huang JC, Tang SH
Solid-State Electronics, 54(1), 37, 2010
82 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
Tsai JH, Lour WS, Huang CH, Dale NF, Lee YH, Sheng JS, Liu WC
Solid-State Electronics, 54(3), 275, 2010
83 Thermal analysis of short wavelength InGaAs/InAlAs quantum cascade lasers
Lee HK, Yu JS
Solid-State Electronics, 54(8), 769, 2010
84 Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Lin TD, Chiu HC, Chang P, Chang YH, Wu YD, Hong M, Kwo J
Solid-State Electronics, 54(9), 919, 2010
85 Effect of interface states on sub-threshold response of III-V MOSFETs, MOS HEMTs and tunnel FETs
Kao WC, Ali A, Hwang E, Mookerjea S, Datta S
Solid-State Electronics, 54(12), 1665, 2010
86 Effect of GaAs substrate misorientation on InxGa1-xAs crystalline quality and photovoltaic performance
Tseng MC, Horng RH, Wuu DS, Tsai YL, Kuo CH, Lin SN, Yu HH
Thin Solid Films, 518(24), 7213, 2010
87 Impact of strain engineering on InGaAs NMOSFET with an InGaAs alloy stressor
Chang ST, Sun PH, Lee CC
Thin Solid Films, 519(5), 1738, 2010
88 MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy
Bugge F, Zorn M, Zeimer U, Pietrzak A, Erbert G, Weyers M
Journal of Crystal Growth, 311(4), 1065, 2009
89 High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
Mozume T, Gozu S
Journal of Crystal Growth, 311(7), 1707, 2009
90 Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
Zhao H, Wang SM, Zhao QX, Sadeghi M, Larsson A
Journal of Crystal Growth, 311(7), 1723, 2009