화학공학소재연구정보센터
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No. Article
821 Electrical Evaluation of InP Surface Damage Caused by Reactive Ion Etching with a Mixture of Methane (CH4) or Ethane (C2H6) and Hydrogen (H-2)
Yamamoto N, Kishi K, Matsumoto S, Kadota Y, Iga R, Okamoto H, Mawatari H
Journal of Vacuum Science & Technology B, 15(1), 103, 1997
822 Electrical Evaluation of Process-Damaged Layers Using P-N-Junctions
Yuda M, Kozen A
Journal of Vacuum Science & Technology B, 15(3), 618, 1997
823 Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices
Ponce FA, Bour DP
Nature, 386(6623), 351, 1997
824 Selective Wet Etching of Lattice-Matched InGaAs/InAlAs on InP and Metamorphic InGaAs/InAlAs on GaAs Using Succinic Acid Hydrogen-Peroxide Solution
Fourre H, Diette F, Cappy A
Journal of Vacuum Science & Technology B, 14(5), 3400, 1996
825 Fabrication of Laterally Selected Si Doped Layer in GaAs Using a Low-Energy Focused Ion-Beam Molecular-Beam Epitaxy Combined System
Yanagisawa J, Nakayama H, Wakaya F, Yuba Y, Gamo K
Journal of Vacuum Science & Technology B, 14(6), 3938, 1996
826 Fabrication of InGaAs/InP Avalanche Photodiodes by Reactive Ion Etching Using CH4/H-2 Gases
Park CY, Yoo JB, Park C, Hyun KS, Oh DK, Lee YH, Lee C, Park HM
Journal of Vacuum Science & Technology B, 13(3), 974, 1995
827 Sulfide Passivation of Ill-V Semiconductors - The Starting Electronic-Structure of a Semiconductor as a Factor in the Interaction Between Its Valence-Electrons and the Sulfur Ion
Bessolov VN, Ivankov AF, Lebedev MV
Journal of Vacuum Science & Technology B, 13(3), 1018, 1995
828 Recent Progress on Magnetic Sensors with Nanostructures and Applications
Sugiyama Y
Journal of Vacuum Science & Technology B, 13(3), 1075, 1995
829 Bidirectional Bistability in a GaAs/AlGaAs Double-Heterojunction Triangular Barrier Switch (Dhtbs)
Yarn KF, Wang YH
Thin Solid Films, 257(1), 104, 1995
830 III-V on Dissimilar Substrates - Epitaxy and Alternatives
Deboeck J, Demeester P, Borghs G
Journal of Vacuum Science & Technology A, 12(4), 995, 1994