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A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells Zhou GD, Sun B, Zhou AK, Wu B, Huang HS Current Applied Physics, 17(2), 235, 2017 |
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Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology Rehman MM, Yang BS, Yang YJ, Karimov KS, Choi KH Current Applied Physics, 17(4), 533, 2017 |
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Incorporation of inorganic nanoparticles into an organic polymer matrix for data storage application Kaur R, Singh J, Tripathi SK Current Applied Physics, 17(5), 756, 2017 |
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Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices Ismail M, Rana AM, Nisa SU, Hussain F, Imran M, Mahmood K, Talib I, Ahmed E, Bao DH Current Applied Physics, 17(10), 1303, 2017 |
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Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets Han PD, Sun B, Li J, Li TJ, Shi QL, Jiao BX, Wu QS, Zhang XJ Journal of Colloid and Interface Science, 505, 148, 2017 |
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Analog and digital Reset processes observed in Pt/CuO/Pt memristive devices Lv FC, Yang R, Guo X Solid State Ionics, 303, 161, 2017 |
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Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlOx/Ti MIM structure Varun I, Bharti D, Raghuwanshi V, Tiwari SP Solid State Ionics, 309, 86, 2017 |
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Resistive switching behavior of hexagonal sodium tungsten bronze nanowire Lei L, Yin YL, Liu C, Zhou Y, Peng YH, Zhou F, Ling J, Zhou WC, Tang DS Solid State Ionics, 308, 107, 2017 |
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Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device Yan HY, Li ZQ Solid-State Electronics, 129, 120, 2017 |
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A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded Zhu W, Li J, Zhang L, Hu XC Solid-State Electronics, 129, 134, 2017 |