화학공학소재연구정보센터
검색결과 : 87건
No. Article
71 Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C
Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T
Materials Science Forum, 338-3, 1137, 2000
72 SiC MISFETs with MBE-grown AlN gate dielectric
Zetterling CM, Ostling M, Yano H, Kimoto T, Matsunami H, Linthicum K, Davis RF
Materials Science Forum, 338-3, 1315, 2000
73 Modeling short channel effect on high-k and stacked-gate MOSFETs
Zhang J, Yuan JS, Ma Y
Solid-State Electronics, 44(11), 2089, 2000
74 Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics
Lucovsky G, Yang HY, Wu Y, Niimi H
Thin Solid Films, 374(2), 217, 2000
75 Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy
Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Tao HS, Madey TE, Lucovsky G
Journal of Vacuum Science & Technology A, 17(4), 1250, 1999
76 Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Madey TE, Lucovsky G
Journal of Vacuum Science & Technology B, 17(4), 1831, 1999
77 Growth characterization of rapid thermal oxides
Lai WH, Li MF, Chan L, Chua TC
Journal of Vacuum Science & Technology B, 17(5), 2226, 1999
78 Boron diffusion in silicon oxides and oxynitrides
Ellis KA, Buhrman RA
Journal of the Electrochemical Society, 145(6), 2068, 1998
79 Electrical characterization of thin SiO2 films on silicon created by anodic oxygen corona discharge processing
Sayedi SM, Landsberger LM, Kahrizi M, Belkouch S, Landheer D
Journal of the Electrochemical Society, 145(8), 2937, 1998
80 Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation
Chen CR, Hu SF, Chen PC, Hwang HL, Hsia LC
Journal of Vacuum Science & Technology B, 16(5), 2712, 1998