검색결과 : 89건
| No. | Article |
|---|---|
| 71 |
Fused kinase is stabilized by Cdc37/Hsp90 and enhances Gli protein levels Kise Y, Takenaka K, Tezuka T, Yamamoto T, Miki H Biochemical and Biophysical Research Communications, 351(1), 78, 2006 |
| 72 |
Inorganic-organic hybrid membranes with anhydrous proton conduction prepared from 3-aminopropyltriethoxysilane and sulfuric acid by the sol-gel method Tezuka T, Tadanaga K, Hayashi A, Tatsumisago M Journal of the American Chemical Society, 128(51), 16470, 2006 |
| 73 |
Preparation of proton conductive composites with CsHSO4/CsH2PO4 and phosphosilicate gel Tezuka T, Tadanaga K, Hayashi A, Tatsumisago M Solid State Ionics, 177(26-32), 2463, 2006 |
| 74 |
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Tezuka T, Moriyama Y, Nakaharai S, Sugiyama N, Hirashita N, Toyoda E, Miyamura Y, Takagi S Thin Solid Films, 508(1-2), 251, 2006 |
| 75 |
Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain Maeda T, Ikeda K, Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y, Takagi S Thin Solid Films, 508(1-2), 346, 2006 |
| 76 |
Preparation of proton conducting composites by mechanical milling for phosphorus-containing solid acids Matsuda A, Tezuka T, Nono Y, Tadanaga K, Minami T, Tatsumisago M Solid State Ionics, 176(39-40), 2899, 2005 |
| 77 |
Preparation of proton conductive composites with cesium hydrogen sulfate and phosphosilicate gel Tatsumisago M, Tezuka T, Hayashi A, Tadanaga K Solid State Ionics, 176(39-40), 2909, 2005 |
| 78 |
Utilization of glass papers as a support for proton conducting inorganic-organic hybrid membranes from 3-glycidoxypropyltrimethoxysilane, tetraalkoxysilane and orthophosphoric acid Tezuka T, Tadanaga K, Matsuda A, Hayashi A, Tatsumisago M Solid State Ionics, 176(39-40), 3001, 2005 |
| 79 |
Sub-band structure engineering for advanced CMOS channels Takagi S, Mizuno T, Tezuka T, Sugiyama N, Nakaharai S, Numata T, Koga J, Uchida K Solid-State Electronics, 49(5), 684, 2005 |
| 80 |
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation Usuda K, Mizuno T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S, Takagi S Applied Surface Science, 224(1-4), 113, 2004 |