화학공학소재연구정보센터
검색결과 : 164건
No. Article
71 Control of strain relaxation behavior of Ge1-xSnx buffer layers
Shimura Y, Takeuchi S, Nakatsuka O, Sakai A, Zaima S
Solid-State Electronics, 60(1), 84, 2011
72 Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M
Solid-State Electronics, 60(1), 116, 2011
73 High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning
Loo R, Wang G, Souriau L, Lin JC, Takeuchi S, Brammertz G, Caymax M
Journal of the Electrochemical Society, 157(1), H13, 2010
74 Monodisperse Cell-Encapsulating Peptide Microgel Beads for 3D Cell Culture
Tsuda Y, Morimoto Y, Takeuchi S
Langmuir, 26(4), 2645, 2010
75 Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M
Thin Solid Films, 518, S48, 2010
76 Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition
Takeuchi S, Nguyen ND, Goosens J, Caymax M, Loo R
Thin Solid Films, 518, S18, 2010
77 Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM
Thin Solid Films, 518(9), 2538, 2010
78 Synthesis of Poly(oxoammonium salt)s and Their Electrical Properties in the Organic Thin Film Device
Suga T, Takeuchi S, Ozaki T, Sakata M, Oyaizu K, Nishide H
Chemistry Letters, 38(12), 1160, 2009
79 Properties of the Anion-Binding Site of pharaonis Halorhodopsin Studied by Ultrafast Pump-Probe Spectroscopy and Low-Temperature FTIR Spectroscopy
Nakashima K, Nakamura T, Takeuchi S, Shibata M, Demura M, Tahara T, Kandori H
Journal of Physical Chemistry B, 113(24), 8429, 2009
80 Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki M, Takeuchi S, Nakatsuka O, Sakai A, Ogawa M, Zaima S
Applied Surface Science, 254(19), 6048, 2008