71 |
Theoretical study of the influence of surface effects on GaN-based chemical sensors Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B Applied Surface Science, 452, 75, 2018 |
72 |
Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications Ravi L, Boopathi K, Panigrahi P, Krishnan B Applied Surface Science, 449, 213, 2018 |
73 |
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates Pan L, Dong X, Li ZH, Luo WK, Ni JY Applied Surface Science, 447, 512, 2018 |
74 |
GaN nanocolumns fabricated by self-assembly Ni mask and its enhanced photocatalytic performance in water splitting Xi X, Yang C, Cao HC, Yu ZG, Li J, Lin S, Ma ZH, Zhao LX Applied Surface Science, 462, 310, 2018 |
75 |
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering Zhang T, Wang L, Li XB, Bu YY, Pu TF, Wang RL, Li LA, Ao JP Applied Surface Science, 462, 799, 2018 |
76 |
Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application Sun HD, Park YJ, Li KH, Liu XW, Detchprohm T, Zhang XX, Dupuis RD, Li XH Applied Surface Science, 458, 949, 2018 |
77 |
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes Osvald J, Lalinsky T, Vanko G Applied Surface Science, 461, 206, 2018 |
78 |
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition Stoklas R, Gregusova D, Hasenohrl S, Brytavskyi E, Tapajna M, Frohlich K, Hascik S, Gregor M, Kuzmik J Applied Surface Science, 461, 255, 2018 |
79 |
Using Pd as a Cocatalyst on GaN-ZnO Solid Solution for Visible-Light-Driven Overall Water Splitting Li Z, Zhang FX, Han JF, Zhu J, Li MR, Zhang BQ, Fan WJ, Lu JL, Li C Catalysis Letters, 148(3), 933, 2018 |
80 |
Facilitating epitaxial growth of ZnO films on patterned GaN layers: A solution-concentration-induced successive lateral growth mechanism Ko RM, Lin YR, Chen CY, Tseng PF, Wang SJ Current Applied Physics, 18(1), 1, 2018 |