화학공학소재연구정보센터
검색결과 : 1,565건
No. Article
71 Theoretical study of the influence of surface effects on GaN-based chemical sensors
Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B
Applied Surface Science, 452, 75, 2018
72 Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications
Ravi L, Boopathi K, Panigrahi P, Krishnan B
Applied Surface Science, 449, 213, 2018
73 Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
Pan L, Dong X, Li ZH, Luo WK, Ni JY
Applied Surface Science, 447, 512, 2018
74 GaN nanocolumns fabricated by self-assembly Ni mask and its enhanced photocatalytic performance in water splitting
Xi X, Yang C, Cao HC, Yu ZG, Li J, Lin S, Ma ZH, Zhao LX
Applied Surface Science, 462, 310, 2018
75 Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Zhang T, Wang L, Li XB, Bu YY, Pu TF, Wang RL, Li LA, Ao JP
Applied Surface Science, 462, 799, 2018
76 Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application
Sun HD, Park YJ, Li KH, Liu XW, Detchprohm T, Zhang XX, Dupuis RD, Li XH
Applied Surface Science, 458, 949, 2018
77 High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Osvald J, Lalinsky T, Vanko G
Applied Surface Science, 461, 206, 2018
78 Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas R, Gregusova D, Hasenohrl S, Brytavskyi E, Tapajna M, Frohlich K, Hascik S, Gregor M, Kuzmik J
Applied Surface Science, 461, 255, 2018
79 Using Pd as a Cocatalyst on GaN-ZnO Solid Solution for Visible-Light-Driven Overall Water Splitting
Li Z, Zhang FX, Han JF, Zhu J, Li MR, Zhang BQ, Fan WJ, Lu JL, Li C
Catalysis Letters, 148(3), 933, 2018
80 Facilitating epitaxial growth of ZnO films on patterned GaN layers: A solution-concentration-induced successive lateral growth mechanism
Ko RM, Lin YR, Chen CY, Tseng PF, Wang SJ
Current Applied Physics, 18(1), 1, 2018