화학공학소재연구정보센터
검색결과 : 142건
No. Article
71 Pendeo epitaxial growth of 3C-SiC on Si substrates
Shoji A, Okui Y, Nishiguchi T, Ohshima S, Nishino S
Materials Science Forum, 457-460, 257, 2004
72 Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects
Trunek AJ, Neudeck PG, Powell JA, Spry DJ
Materials Science Forum, 457-460, 261, 2004
73 Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates
Chassagne T, Ferro G, Haas H, Leycuras A, Mank H, Monteil Y
Materials Science Forum, 457-460, 265, 2004
74 Growth of SiC films using tetraethylsilane
Kubo N, Kawase T, Asahina S, Kanayama N, Tsuda H, Moritani A, Kitahara K
Materials Science Forum, 457-460, 269, 2004
75 Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"
Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S
Materials Science Forum, 457-460, 273, 2004
76 Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100)
Ferro G, Camassel J, Juillaguet S, Balloud C, Polychroniadis EK, Stoimenos Y, Seigle-Ferrand P, Dazord J, Monteil Y, Rushworth SA, Smith LM
Materials Science Forum, 457-460, 281, 2004
77 Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition
Nishiguchi T, Mukai Y, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S
Materials Science Forum, 457-460, 285, 2004
78 Stress control in 3C-SiC films grown on Si(111)
Zgheib C, Masri P, Weih P, Ambacher O, Pezoldt J
Materials Science Forum, 457-460, 301, 2004
79 Investigation of thick 3C-SiC films re-grown on thin 35 nm "Flash Lamp Annealed" 3C-SiC layers
Ferro G, Panknin D, Stoemenos J, Balloud C, Camassel J, Polychroniadis E, Monteil Y, Skorupa W
Materials Science Forum, 457-460, 313, 2004
80 Low temperature (320 degrees C) deposition of hydrogenated microcrystalline cubic silicon carbide thin films
Miyajima S, Yamada A, Konagai M
Materials Science Forum, 457-460, 317, 2004