검색결과 : 142건
No. | Article |
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71 |
Pendeo epitaxial growth of 3C-SiC on Si substrates Shoji A, Okui Y, Nishiguchi T, Ohshima S, Nishino S Materials Science Forum, 457-460, 257, 2004 |
72 |
Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects Trunek AJ, Neudeck PG, Powell JA, Spry DJ Materials Science Forum, 457-460, 261, 2004 |
73 |
Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates Chassagne T, Ferro G, Haas H, Leycuras A, Mank H, Monteil Y Materials Science Forum, 457-460, 265, 2004 |
74 |
Growth of SiC films using tetraethylsilane Kubo N, Kawase T, Asahina S, Kanayama N, Tsuda H, Moritani A, Kitahara K Materials Science Forum, 457-460, 269, 2004 |
75 |
Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls" Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S Materials Science Forum, 457-460, 273, 2004 |
76 |
Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100) Ferro G, Camassel J, Juillaguet S, Balloud C, Polychroniadis EK, Stoimenos Y, Seigle-Ferrand P, Dazord J, Monteil Y, Rushworth SA, Smith LM Materials Science Forum, 457-460, 281, 2004 |
77 |
Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition Nishiguchi T, Mukai Y, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S Materials Science Forum, 457-460, 285, 2004 |
78 |
Stress control in 3C-SiC films grown on Si(111) Zgheib C, Masri P, Weih P, Ambacher O, Pezoldt J Materials Science Forum, 457-460, 301, 2004 |
79 |
Investigation of thick 3C-SiC films re-grown on thin 35 nm "Flash Lamp Annealed" 3C-SiC layers Ferro G, Panknin D, Stoemenos J, Balloud C, Camassel J, Polychroniadis E, Monteil Y, Skorupa W Materials Science Forum, 457-460, 313, 2004 |
80 |
Low temperature (320 degrees C) deposition of hydrogenated microcrystalline cubic silicon carbide thin films Miyajima S, Yamada A, Konagai M Materials Science Forum, 457-460, 317, 2004 |