61 |
Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer Lin JH, Huang SJ, Su YK, Lai CH Applied Surface Science, 354, 148, 2015 |
62 |
Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment Li S, Chen YT, Chang SJ Current Applied Physics, 15(3), 180, 2015 |
63 |
Thickness dependent magnetic and ferroelectric properties of LaNiO3 buffered BiFeO3 thin films Hussain S, Hasanain SK, Jaffari GH, Shah SI Current Applied Physics, 15(3), 194, 2015 |
64 |
2D segment model for a solid oxide fuel cell with a mixed ionic and electronic conductor as electrolyte Shen SL, Ni M International Journal of Hydrogen Energy, 40(15), 5160, 2015 |
65 |
Modeling and simulation study of the self-discharge in supercapacitors in presence of a blocking layer Tevi T, Takshi A Journal of Power Sources, 273, 857, 2015 |
66 |
Improved modeling on the RF behavior of InAs/AlSb HEMTs Guan H, Lv HL, Zhang YM, Zhang YM Solid-State Electronics, 114, 155, 2015 |
67 |
Charge injection in dielectric films during electrowetting actuation under direct current voltage Thomas D, Audry MC, Thibaut RM, Kleimann P, Chassagneux F, Maillard M, Brioude A Thin Solid Films, 590, 224, 2015 |
68 |
Electrical insulation and breakdown properties of SiO2 and Al2O3 thin multilayer films deposited on stainless steel by physical vapor deposition Martinez-Perdiguero J, Mendizabal L, Morant-Minana MC, Castro-Hurtado I, Juarros A, Ortiz R, Rodriguez A Thin Solid Films, 595, 171, 2015 |
69 |
Studies on structural, electrical and optical properties of multiferroic (Ag, Ni and In) codoped Bi0.9Nd0.1FeO3 thin films Xue X, Tan GQ, Dong GH, Liu WL, Ren HJ Applied Surface Science, 292, 702, 2014 |
70 |
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)(2)(N-iPr-amd) precursor for a high permittivity gate dielectric Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW, Park J, Lansalot-Matras C, Noh W, Kim H Applied Surface Science, 297, 16, 2014 |