화학공학소재연구정보센터
검색결과 : 312건
No. Article
61 Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer
Lin JH, Huang SJ, Su YK, Lai CH
Applied Surface Science, 354, 148, 2015
62 Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment
Li S, Chen YT, Chang SJ
Current Applied Physics, 15(3), 180, 2015
63 Thickness dependent magnetic and ferroelectric properties of LaNiO3 buffered BiFeO3 thin films
Hussain S, Hasanain SK, Jaffari GH, Shah SI
Current Applied Physics, 15(3), 194, 2015
64 2D segment model for a solid oxide fuel cell with a mixed ionic and electronic conductor as electrolyte
Shen SL, Ni M
International Journal of Hydrogen Energy, 40(15), 5160, 2015
65 Modeling and simulation study of the self-discharge in supercapacitors in presence of a blocking layer
Tevi T, Takshi A
Journal of Power Sources, 273, 857, 2015
66 Improved modeling on the RF behavior of InAs/AlSb HEMTs
Guan H, Lv HL, Zhang YM, Zhang YM
Solid-State Electronics, 114, 155, 2015
67 Charge injection in dielectric films during electrowetting actuation under direct current voltage
Thomas D, Audry MC, Thibaut RM, Kleimann P, Chassagneux F, Maillard M, Brioude A
Thin Solid Films, 590, 224, 2015
68 Electrical insulation and breakdown properties of SiO2 and Al2O3 thin multilayer films deposited on stainless steel by physical vapor deposition
Martinez-Perdiguero J, Mendizabal L, Morant-Minana MC, Castro-Hurtado I, Juarros A, Ortiz R, Rodriguez A
Thin Solid Films, 595, 171, 2015
69 Studies on structural, electrical and optical properties of multiferroic (Ag, Ni and In) codoped Bi0.9Nd0.1FeO3 thin films
Xue X, Tan GQ, Dong GH, Liu WL, Ren HJ
Applied Surface Science, 292, 702, 2014
70 Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)(2)(N-iPr-amd) precursor for a high permittivity gate dielectric
Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW, Park J, Lansalot-Matras C, Noh W, Kim H
Applied Surface Science, 297, 16, 2014