검색결과 : 87건
No. | Article |
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61 |
Interface of tantalum oxide films on silicon by UV annealing at low temperature Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW Thin Solid Films, 428(1-2), 248, 2003 |
62 |
Pulsed laser deposition of TiO2 for MOS gate dielectric Paily R, DasGupta A, DasGupta N, Bhattacharya P, Misra P, Ganguli T, Kukreja LM, Balamurugan AK, Rajagopalan S, Tyagi AK Applied Surface Science, 187(3-4), 297, 2002 |
63 |
Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP Materials Science Forum, 389-3, 993, 2002 |
64 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S Solid-State Electronics, 46(10), 1659, 2002 |
65 |
Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy Miyazaki S, Narasaki M, Ogasawara M, Hirose M Solid-State Electronics, 46(11), 1679, 2002 |
66 |
Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces Lucovsky G, Niimi H, Wu Y, Yang H Applied Surface Science, 159, 50, 2000 |
67 |
Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces Niimi H, Yang HY, Lucovsky G, Keister JW, Rowe JE Applied Surface Science, 166(1-4), 485, 2000 |
68 |
Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces Lucovsky G, Phillips JC Applied Surface Science, 166(1-4), 497, 2000 |
69 |
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Yu Z, Ramdani J, Curless JA, Finder JM, Overgaard CD, Droopad R, Eisenbeiser KW, Hallmark JA, Ooms WJ, Conner JR, Kaushik VS Journal of Vacuum Science & Technology B, 18(3), 1653, 2000 |
70 |
Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics Lucovsky G, Yang H, Niimi H, Keister JW, Rowe JE, Thorpe MF, Phillips JC Journal of Vacuum Science & Technology B, 18(3), 1742, 2000 |