화학공학소재연구정보센터
검색결과 : 87건
No. Article
61 Interface of tantalum oxide films on silicon by UV annealing at low temperature
Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW
Thin Solid Films, 428(1-2), 248, 2003
62 Pulsed laser deposition of TiO2 for MOS gate dielectric
Paily R, DasGupta A, DasGupta N, Bhattacharya P, Misra P, Ganguli T, Kukreja LM, Balamurugan AK, Rajagopalan S, Tyagi AK
Applied Surface Science, 187(3-4), 297, 2002
63 Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing
Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP
Materials Science Forum, 389-3, 993, 2002
64 High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations
Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S
Solid-State Electronics, 46(10), 1659, 2002
65 Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy
Miyazaki S, Narasaki M, Ogasawara M, Hirose M
Solid-State Electronics, 46(11), 1679, 2002
66 Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces
Lucovsky G, Niimi H, Wu Y, Yang H
Applied Surface Science, 159, 50, 2000
67 Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces
Niimi H, Yang HY, Lucovsky G, Keister JW, Rowe JE
Applied Surface Science, 166(1-4), 485, 2000
68 Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
Lucovsky G, Phillips JC
Applied Surface Science, 166(1-4), 497, 2000
69 Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
Yu Z, Ramdani J, Curless JA, Finder JM, Overgaard CD, Droopad R, Eisenbeiser KW, Hallmark JA, Ooms WJ, Conner JR, Kaushik VS
Journal of Vacuum Science & Technology B, 18(3), 1653, 2000
70 Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics
Lucovsky G, Yang H, Niimi H, Keister JW, Rowe JE, Thorpe MF, Phillips JC
Journal of Vacuum Science & Technology B, 18(3), 1742, 2000